[PDF] Top 20 Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors
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Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors
... with the previous reports [5]. In addition, sample III showed a lower l FE and a higher V th than those of sample ...as the back channel layer, has less oxygen vacancies in ... See full document
7
Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
... for the passivation- free sample were under the atmosphere ambient and vacuum environment, while all TFT devices with passivation layers were measured under atmosphere ambient ...that ... See full document
7
Effects of Channel Width and Nitride Passivation Layer on Electrical Characteristics of Polysilicon Thin-Film Transistors
... hence, the decrease in the subthreshold swing is less dependent on the variation in channel ...demonstrates the threshold voltage as a function of ...increased ... See full document
8
Laser Direct Patterning of Organic Dielectric Passivation Layer for Fabricating Amorphous Silicon Thin-Film Transistors
... with the conventional process, the laser photoablation process can lead to cost savings in display fabrication, which is mentioned ...In the conventional TFT LCD mass production process, SiN x is ... See full document
5
Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer
... presents the light–color-dependent negative bias stress (NBIS) effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with Al 2 O 3 passivation ... See full document
5
Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors
... technology and mechanically attached to the sides of the ...ICs on the array itself instead of attaching them to the panel ...steps and cost as well as ... See full document
8
Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers
... optimize the interface and bulk states of a-IGZO TFTs to achieve better ...or the use of a high- k dielectric as a gate insulator, 6–8) while better bulk states might be achieved using ... See full document
4
Electrical enhancement of polycrystalline silicon thin-film transistors using fluorinated silicate glass passivation layer
... Since the FSG film shows poor thermal stability and the fluorine atoms may diffuse out of the FSG film during post thermal annealing, a 100-nm-thick SiN x capping layer ... See full document
7
Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors
... conclusion, the sol –gel-processed paraffin wax passivation layer for the a-IGZO TFTs was discussed in this ...study. The device after paraf fin wax passivation process shows a ... See full document
4
High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure
... temperature. The KrF excimer laser had a beam spot size of 23 mm×1.8 mm and the pulse width of 30 ...irradiation and capping oxide removal, phos- phorus ion implantation with a ... See full document
5
Low-temperature passivation of amorphous-silicon thin-film transistors with supercritical fluids
... TFTs on glass substrate were investigated with SCCO 2 fluids in this let- ...ter. The trilayer a-SiN x /a-Si:H/n + -a-Si:H with thickness of 300 nm/150 nm/50 nm, respectively, were formed over ... See full document
3
The Impact of Active Layer Pre-Treatment on Bias Stress Stability of Sol-gel Derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor
... Department of Photonics & Display Institute, National Chiao Tung University, Hsinchu 300, Taiwan, ...investigated the gate bias stress-induced instability on the electrical properties with ... See full document
9
Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers
... finishing the a-IGZO film, N 2 gas with a flow rate of 2 sccm was in situ injected to the deposition chamber without breaking a vacuum to form the a-IGZO:N ...layer. The ... See full document
3
Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage
... addition, the low device mobility and high-voltage operation of IGZO TFTs are unsuitable for driving OLEDs, which require a high current and low power ...semiconducting channel was ... See full document
4
Nitrogenated amorphous InGaZnO thin film transistor
... Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a ... See full document
4
Improved performances in low-voltage-driven InGaZnO thin film transistors using a SiO2 buffer layer insertion
... buffer layer between IGZO active channel layer and LaAlO 3 gate insulator results in a reduced effec- tive dielectric constant but with significant improved char- acteristics including a high ... See full document
5
Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors
... 2 and tetraethylorthosilicate at 800 mTorr and 380 jC. This layer was the gate ...%) and used without any further purification. The pentacene film with a thickness ... See full document
5
Influence of mechanical strain on the electrical properties of flexible organic thin-film transistors
... investigated the bending effect on the electrical properties of flexible organic thin-film transistors (OTFTs) fabricated on stainless steel ...that the ... See full document
6
Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors
... depends on channel width and drain voltage that are observed in Figures 1(a) and ...illustrates the threshold voltage shift versus various channel width and drain ... See full document
5
Improved air stability of n-channel organic thin-film transistors with surface modification on gate dielectrics
... Organic thin film transistors 共OTFTs兲 are currently the subject of intensive research owing to their potential appli- cations in low-cost, flexible electronic products, such as ... See full document
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