[PDF] Top 20 Morphology and optical properties of single- and multi-layer InAs quantum dots

... understanding of the structural and optical properties of quantum dots (QDs) is critical for their use in optical communication ...study, single- and ... See full document

... Results and discussions In order to know the growth morphology of the sputtered Si atoms during deposition, ...before and after depositing the Si layer with effective thickness ... See full document

... 3 and T W Chi 4 1 Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan, Republic of China 2 Industrial Technology Research and ... See full document

... character of the GaAsSb-capped InAs QDs. The effect of CL thickness on the radiative recombina- tion lifetime in the GaAsSb-capped QDs has also been inves- tigated by TRPL ...electrons and ... See full document

... experiments of this article, a buried pyramidal InAs/GaAs SAQD nanostructure, as depicted schematically in ...The InAs dot is self-assembled under certain conditions during heteroepitaxy on (001) ... See full document

... ability of nucleating new islands. Though both the QD size and density increase after capping the high-In-content In- GaAs layer in type-B and type-C QDs, the former method gives bigger dot ... See full document

... effect of the size increase and causes a blue-shift, suggesting that the large strain energy, which increases as the thickness of the spacer layer decreases, may drive considerable intermixing ... See full document

... stage of strain analysis, the quantum-dot heterostructure system is considered to consist of only quantum dot, wetting layer and substrate but not capping ...mismatch of ... See full document

... the optical properties of AlGaAsSb- capped InAs QDs have been investigated by PL and TRPL ...GaAsSb-capped InAs QDs can be restored to type-I by add- ing Al into the ...stability ... See full document

... interrupted and retained for 7 s for adatom migration well. The InAs quantum dot arrays were generated under the ...spacer layer was grown at the same ...buffer layer. Finally, the ... See full document

... mechanisms and corresponding transit times in such systems are necessary for fabricating high-efficiency optoelectronic and electronic devices, however, up to now, very few works have been done on the ... See full document

... #85 and #86 were vacuum annealed simultaneously, and after annealing PL was taken at room temperature with 1 mW excitation ...intensity of samples #85 and #86 along with the reference sample ... See full document

... A layer of InAs self-assembled QDs ...GaAs layer. A layer Al metal mask with arrays of apertures (φ ∼1–2 μm) was fabricated on the sample surface for isolating single QD ... See full document

... 78.67.Hc InAs-based quantum dots 共QDs兲 provide potential appli- cations in long wavelength optical-fiber ...influence of compressive strain effect, such as the strain re- ducing ... See full document

... INTRODUCTION InAs/ GaAs self-assembled quantum dots 共QDs兲 ...physics and promising technological applications. Optical fi- ber communication requires an increased emission wave- length ... See full document

... Institute of Physics. 关DOI: 10.1063/1.2150258兴 I. INTRODUCTION InAs/ GaAs self-assembled quantum dots 1–7 共QDs兲 have attracted considerable interest in fundamental physics and promising ... See full document

... surfactant and encourages 2D growth, as discussed with reference to highly strained InGaAs QWs ...surface morphology as a significant amount of the deposited material tends to form these thick ... See full document

... self-assembled InAs quantum dots 共QDs兲 with a thin antimony-containing capping layer ...because of its great capability of extending the emission wavelength to- ward ...the ... See full document

... self-assembled InAs/ GaAs QDs grown by molecular beam epitaxy, in terms of threshold current, 1 modulation speed, 2,3 linewidth enhancement factor, 3,4 characteristic temperature, 3,5 and ... See full document

... amount of effort expended in the study of self- assembled QD formation on patterned substrates to improve control of the size uniformity and ...use of differences in atom diffusion on ... See full document