[PDF] Top 20 Optical response of layers of embedded semiconductor quantum dots
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Optical response of layers of embedded semiconductor quantum dots
... nano-objects兲 of the embedding dielectric host medium. For InAs quantum dots with ⑀ = ...15.15 embedded in GaAs with ⑀ m = 13.1 and modelled by means of dielectric ellipsoids the excess ... See full document
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Magneto-optical response of layers of semiconductor quantum dots and nanorings
... Department of Electronic Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan 共Received 17 February 2005; published 30 June 2005 兲 In this paper ... See full document
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Optical response of quantum dot multilayer structures
... study optical response of InAs/GaAs quantum dot multilayered ...the optical response of an isolated layer of embedded quantum dots has been ... See full document
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Quantum control study of ultrafast optical responses in semiconductor quantum dot devices
... types of strain-reducing layers had been fabricated and ana- lyzed to demonstrate the effectiveness of the strain-reducing ...degrees of strain were revealed in the In 0.18 Ga 0.82 As layer. ... See full document
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Magneto-optical properties of ZnMnTe/ZnSe quantum dots
... system of long recombination time and spatially separated electrons and holes for possible spin manipulation, the study of spin dynamics in type-II QD system is ...Magnetic Semiconductor (DMS) ZnMnTe ... See full document
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Magneto-optical properties of ZnMnTe/ZnSe quantum dots
... system of long recombination time and spatially separated electrons and holes for possible spin manipulation, the study of spin dynamics in type-II QD system is ...Magnetic Semiconductor (DMS) ZnMnTe ... See full document
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Formation of semiconductor quantum rings using GaAs/AlAs partially capped layers
... the optical properties of quantum rings, the fabrication techniques and the formation mechanism have also attracted much ...InGaAs quantum rings were first fabricated as a result of the ... See full document
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Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots
... influence of As atoms on the morphologies of GaSb QDs is ...the embedded GaSb layer even when the uncapped layer reveals QD-like ...formation of QR structures is attributed to repelled Sb ... See full document
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Photoluminescence studies of type-II diluted magnetic semiconductor ZnMnTe/ZnSe quantum dots
... peratures of Zn, Mn, Se, and Te were fixed at 294, 695, 178, and 310 ° C, ...buffer layers were ...monolayers of ZnSe by migra- tion enhanced epitaxy, followed by 50 nm of ZnSe by con- ... See full document
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Mechanical and optical properties of InAs/GaAs self-assembled quantum dots
... on semiconductor tech- nologies, especially various epitaxy techniques for preparing molecular layers of materials and lithography techniques for fabricating densely packed electrical circuits, have ... See full document
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Optical properties of InGaN quantum dots grown by SiN(x) nanomasks
... GaN quantum well 共QW兲 structures have been suc- cessfully used as the active layers in LEDs and ...using quantum dots 共QDs兲 instead of QWs as the active layer can improve the ... See full document
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Origins of nonzero multiple photon emission probability from single quantum dots embedded in photonic crystal nanocavities
... exploitation of semiconductor self-assembled quan- tum dots 共QDs兲 to develop a solid-state single photon emitter is currently of interest for quantum information ...an optical ... See full document
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Diamagnetic Response of Exciton Complexes in Semiconductor Quantum Dots
... diamagnetism of such strongly confined few-particle ...magnetic response of interparticle Coulomb energy is even more sensitive to the wave function extent (scales as l 3 ), as compared with the ... See full document
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Optical properties and sub-bandgap formation of nano-crystalline Si quantum dots embedded ZnO thin film
... (nc-Si) quantum dots (QDs) using a ZnO/Si multilayer deposition structure and a post-annealing process, and the formation of high crystallinity of Si QDs embedded in the crystalline ZnO ... See full document
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A Study of Optical Properties of InGaAs/GaAs Quantum Dots
... two of which are attributed to InGaAs QDs, one is attributed to the InGaAs wetting layer and the other two are attributed to GaAs band-gap ...Two of the low energy features are identified to the ... See full document
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Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers
... wavelength of 635 ...rate of 1 ...technique of time-correlated single-photon count- ing (TCSPC) by a PC plug-in time-correlated counting ...resolution of the apparatus is of the order ... See full document
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Geometrical impact on the optical polarization of droplet epitaxial quantum dots
... origins of DOPs in InGaAs/GaAs self- assembled ...removal of strain, which enables us to focus on the effects of geometry on optical ...self-assembly of lattice-matched GaAs/AlGaAs QDs ... See full document
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Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells
... multiple quantum wells, bi-directional, guiding effect, ridge waveguide ...1.Introduction Optical amplifier is an important device in the modern optical ...loss of the light in the ... See full document
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Electron energy state dependence on the shape and size of semiconductor quantum dots
... in semiconductor quantum dots caused by the nonuniformity in their size and shape is of primary concern for practical laser ...fabrication of quantum dots with a small ... See full document
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Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots
... character of the GaAsSb-capped InAs QDs. The effect of CL thickness on the radiative recombina- tion lifetime in the GaAsSb-capped QDs has also been inves- tigated by TRPL ...square of the overlap ... See full document
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