[PDF] Top 20 Low power consumption resistance random access memory with Pt/InOx/TiN structure
Has 10000 "Low power consumption resistance random access memory with Pt/InOx/TiN structure" found on our website. Below are the top 20 most common "Low power consumption resistance random access memory with Pt/InOx/TiN structure".
Low power consumption resistance random access memory with Pt/InOx/TiN structure
... Low power consumption resistance random access memory with Pt/InOx/TiN structure Jyun-Bao Yang, Ting-Chang Chang, Jheng-Jie Huang, ... See full document
5
Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
... Compared with single layer RRAM, filament formation process in multilayer devices is restricted with the Zn:SiO 2 ...combined with severe thermal effect in the single layer sample dominates, which ... See full document
7
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
... 188 K.-C. Chang et al. / J. of Supercritical Fluids 85 (2014) 183– 189 Fig. 9. The schematic diagram of the transfer on carrier conduction mechanism in Sn:SiO x film after SCCO 2 treatment. 4. Conclusion In summary, the ... See full document
7
The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
... the TiN/Ti/SiO 2 /Si sub- strate, 6-nm-thick BN film combined with 12-nm-thick HfO 2 film is deposited on the TiN/Ti/SiO 2 /Si substrate by RF mag- netron sputtering ...Finally, Pt top ... See full document
4
Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure
... the resistance changes from high- resistance state (HRS) to low-resistance state (LRS) during set process and returns to HRS during reset ...set with a LRS current of ...high ... See full document
5
Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
... The tin-doped can supply conduction path to induce resistance switching ...of tin-doped silicon oxide (Sn:SiO x ) increased the extra leakage path lead to power consumption and joule ... See full document
5
High performance of graphene oxide-doped silicon oxide-based resistance random access memory
... RRAM with a sandwiched structure of Pt/Zr:SiO x /C:SiO x /TiN was fabricated to investigate the switching merits by inserting C:SiO x ...and low-resistance state (LRS) of Zr:SiO ... See full document
6
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
... the TiN/Ti/SiO 2 /Si substrate by co-sputtering with pure SiO 2 and zinc ...sputtering power was fixed with RF power 200 W and DC power 10 W for silicon dioxide and zinc targets, ... See full document
4
Resistive switching characteristics of Pt/CeOx/TiN memory device
... of Pt/CeO x /TiN memory devices are investigated for potential applications in nonvolatile resistive random access memory ...2 with a cubic fluorite ...the Pt/CeO x ... See full document
5
Bipolar resistive switching of chromium oxide for resistive random access memory
... on TiN/SiO 2 /Si subtract without Pt top electrode was analyzed by X-ray photoelectron spectroscopy ...device with Pt/Cr 2 O 3 /TiN and Pt/Cr 2 O 3 /Pt structure ... See full document
4
Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
... ) resistance random access memory ...both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation ... See full document
3
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
... RRAM resistance switching ...processes with increasing cur- rent compliance were ...processes with C.C. of 50 lA, 200 lA, 400 lA, and the corresponding low resistance state (LRS) ... See full document
5
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
... resistive random access memory (RRAM) is ...a resistance transformation phenomenon, producing a tri-resistive ...operated with a reversed voltage polarity, and the direction of hydrogen ... See full document
3
Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
... increases with temperature, and this is resulted from thermally excited electrons hopping from one trap state to another trap state in discontinuous metallic fila- ... See full document
4
Performance and characteristics of double layer porous silicon oxide resistance random access memory
... switching memory device with an inserted porous silicon oxide layer is investigated in this ...Compared with single Zr:SiO x layer structure, Zr:SiO x /porous SiO x structure ... See full document
5
Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
... as resistance random access memory (RRAM) due to its insulating electrical ...high- resistance state and Ohm’s law in low-resistance state, consisting with filament ... See full document
3
Effect of oxygen concentration on characteristics of NiOx-based resistance random access memory
... sample with a high dielectric constant means that it owns high charge storage ...of low permittivity ...samples with few O ratios needed more voltage to switch the ... See full document
4
Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
... resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO 2 ) fluid is used as a low temperature treat- ...mixed with pure ...compatibility with portable flat ... See full document
3
A NEW DYNAMIC RANDOM-ACCESS MEMORY CELL USING A BIPOLAR MOS COMPOSITE STRUCTURE
... We have proposed a new dynamic RAM cell which consists of an n-channel MOSFET as a transfer gate and a base-collector junction of a merged BJT as a storage capacitor. T[r] ... See full document
9
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
... nonvolatile memory with 1T1R architecture is successfully ...multilevel resistance state by controlling both the set current during the set process and the reset voltage during the reset ...ns), ... See full document
10
相關主題