[PDF] Top 20 Bipolar resistive switching of chromium oxide for resistive random access memory
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Bipolar resistive switching of chromium oxide for resistive random access memory
... resistance switching mechanism because TiN reacts with oxygen easily but Pt does not ...reproducible resistive switching phenomenon in Pt/Cr 2 O 3 /TiN structure under atmospheric conditions with a ... See full document
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Resistive Switching Behaviour of Diode-like gadolinium oxide Resistive Random Access Memory
... /Si/Al resistive random access memory (RRAM) shows a forming-free and bipolar resistive switching behaviour after N 2 -H 2 ...stable resistive switching ... See full document
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The resistive switching characteristics in TaON films for nonvolatile memory applications
... the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device based on sputter-deposited TaON thin film were ...proposed ... See full document
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Forming-free bipolar resistive switching in nonstoichiometric ceria films
... mechanism of forming-free bipolar resistive switching in a Zr/CeO x /Pt device was ...formation of a ZrO y layer at the Zr/CeO x interface. X-ray diffraction studies of CeO x ... See full document
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Resistive switching characteristics of Pt/CeOx/TiN memory device
... The resistive switching characteristics of Pt/CeO x /TiN memory devices are investigated for potential applications in nonvolatile resistive random access ... See full document
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Resistive Switching Behaviour of Diode-like gadolinium oxide Resistive Random Access Memory
... • T.M. Pan and C.H. Lu, “Forming-free resistive switching behavior in Nd 2 O 3 , Dy 2 O 3 , and Er 2 O 3 films fabricated in full room temperature,” Appl. Phys. Lett., vol. 99, pp. 113509-1–3, September ... See full document
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Temperature induced complementary switching in titanium oxide resistive random access memory
... complementary switching can be observed along with bipolar switching in the 400 ◦ C annealed device only, when the compliance current is increased to 50 µA during voltage sweeping, as shown in figure ... See full document
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Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
... range of materials showing RS phenom- ena, such as perovskite oxides, ferromagnets, chalcogenides, and binary metal oxides, 3–9) the binary metal oxides such as HfO 2 have been the most interesting because ... See full document
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Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
... role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is ...dominated resistive switching, hydrogen ions were also observed to ... See full document
3
One bipolar transistor selector - One resistive random access memory device for cross bar memory array
... characteristics of the p-NiO/n-GZO/p-NiO bipolar transistor selector indicating that the selector device shows symmetrical I-V characteristics for both positive and negative ...selectivity of ... See full document
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Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications
... Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications Yang-Shun Fan, Po-Tsun Liu, a) Li-Feng Teng, and Ching-Hui Hsu ... See full document
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Resistive switching characteristics of gallium oxide for nonvolatile memory application
... Gallium oxide Oxygen vacancies This study investigates bipolar resistance switching memory in a fabricated Pt/GaO x /TiN ...Gallium oxide sputtered in ambient Ar shows a change in ... See full document
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Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
... typical bipolar switching behavior of the Pt/Yb 2 O 3 / TiN ...observed for 100 cycles by using dc voltage sweeping ...voltage of about 2 V with 10 mA current compliance was applied, ... See full document
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Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
... the bipolar resistance switching is related to the redox reaction near the anode –electrode/oxide interface, which can be also de fined as the switching layer (SL) ...effect of the PBT ... See full document
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Insertion of a Si layer to reduce operation current for resistive random access memory applications
... Because of the scaling down devices used for conven- tional charge storage based memories, performance reliabil- ity is a significant challenge due to physical ...Recently, resistive random ... See full document
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A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array
... in1 of DA is charged to the potential of ...in2 of DA is charged to the potential of BL2 (while TG1 isolates in1 from BL2, thus in1 replicates the charge on BL2 when WL1 was V read ...level ... See full document
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Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
... based memory structures, such as nanocrystal and SONOS, have encountered data storage ...years, resistive random access memory (ReRAM) has attracted considerable attention as a solution ... See full document
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Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
... the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO 2 ) fluid is used as a low temperature treat- ... See full document
3
Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device
... multilevel resistive switching mechanism as well. Because of the asymmetric distribution of oxygen va- cancies in the active oxide layer, a filament after its formation in the set step ... See full document
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Nano-crystallized titanium oxide resistive memory with uniform switching and long endurance
... novel resistive random access mem- ory using tri-layer dielectrics of GeO x /nano-crystal TiO 2 / TaON and low cost top Ni and bottom TaN ...performance of ultra-low 720 fJ ... See full document
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