[PDF] Top 20 Bistable Resistive Switching of a Sputter-Deposited Cr-doped SrZrO3 Memory Film
Has 10000 "Bistable Resistive Switching of a Sputter-Deposited Cr-doped SrZrO3 Memory Film" found on our website. Below are the top 20 most common "Bistable Resistive Switching of a Sputter-Deposited Cr-doped SrZrO3 Memory Film".
Bistable Resistive Switching of a Sputter-Deposited Cr-doped SrZrO3 Memory Film
... 351 Bistable Resistive Switching of a Sputter-Deposited Cr-doped SrZrO 3 Memory Film Chih-Yi Liu, Pei-Hsun Wu, Arthur Wang, ... See full document
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Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film
... direction of resistive transition is an intrinsic prop- erty for the ...at a low voltage and at 10 V) for the two leakage ...influence of the resistive ...0.2% Cr concentration, ... See full document
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Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
... influences of doping concentration and element on the resistive switching properties of SZO-based memory devices are investigated in this ...The sputter-deposited LNO ... See full document
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Resistive switching mechanisms of V-doped SrZrO3 memory films
... ratio of the two current states was over 1000 at a read ...The switching mechanism from L- to H-state corresponds to the formation of current ...V:SZO film randomly trap electrons, and ... See full document
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Bistable resistive switching in Al2O3 memory thin films
... O 3 , the negative resistance phenomenon was observed in anodic Al 2 O 3 under vacuum condition by Hickmott several decades ...reversible switching of local conductivity in thin Al 2 O ... See full document
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Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film
... Thin Film 37 thin films are amorphous, but the polycrystalline structure is formed for BTO thin films annealed over 500 ◦ ...thin film memory device shows nonpolar switching properties, and ... See full document
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Characteristic Evolution from Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film
... dependence of I –V characteristics for the Schottky diode with TiN/Ti/AZTO/Pt device ...25-nm-thick a-AZTO films were deposited by RF sputtering ...condition of a-AZTO layer was the ... See full document
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Memory Effect of Sol-Gel Derived V-doped SrZrO3 Thin Films
... V-doped SrZrO 3 (SZO) thin films on LaNiO 3 /SiO 2 /Si substrate are synthesized by sol-gel method to form metal-insulator-metal (MIM) sandwich ...properties of the MIM device are ... See full document
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Memory effect of sol-gel derived V-doped SrZrO3 thin films
... access memory (RRAM) is one of the promising candidates for the next generation nonvolatile memory ...access memory (DRAM) [3], and tunable microwave device ...that ... See full document
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Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes
... V-doped SrZrO 3 (SZO) films were deposited on textured LaNiO 3 (LNO) bottom electrodes to investigate the resistance switching properties and ...microstructures of the SZO ... See full document
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Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
... contact-holes of the cells on the TiN bottom electrode. A 20 nm-thick Mo-doped SiO 2 film (sample A) was deposited by sputtering a MoSi 2 target in O 2 ambient at room ... See full document
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Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
... Terms—Nonvolatile memory (NVM), resistive random ac- cess memory (RRAM), resistive switching, stabilization, SrZrO 3 ...access memory, magnetic random access ... See full document
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Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer
... Stable SrZrO 3 Bipolar Resistive Switching Memory by Ti Modulation Layer Ming-Chi Wu 1 , Meng-Han Lin 1 , Yu-Ting Yeh 1 , Chen-Hsi Lin 2 , and Tseung-Yuen Tseng 1 1 Department of ... See full document
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Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
... Resistive switching properties of sol –gel derived Mo-doped SrZrO 3 thin films Chih-Yang Lin a , Chun-Chieh Lin a , Chun-Hsing Huang a , Chen-Hsi Lin b , ... See full document
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Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
... the resistive switching properties of the de- ...nonpolar switching property, whereas the Al/V:SZO/LNO de- vice depicts bipolar switching ...LRS of two devices. The device with ... See full document
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Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
... region of on current, which is located in the negative bias region, affects the growth rate of ...HRS of the control sample can be achieved by applying the same stopping voltage, as shown in ... See full document
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Multilevel resistive switching memory with amorphous InGaZnO-based thin film
... composed of metal atoms. The formation and rupture of the conducting filaments were mainly due to the electro- chemical migration of oxygen ions and oxygen vacancies, and thereby the bipolar ... See full document
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Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
... influence of top electrode material on the resis- tive switching properties of ZrO 2 -based memory film using Pt as a bottom electrode was investigated in this ...different ... See full document
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Resistance switching properties of sol-gel derived SrZrO3 based memory thin films
... applying a negative bias voltage on the device, the oxygen vacancies, metallic elements or carbon would form conducting filaments as the conducting paths and the leakage-state is changed to the ...giving a ... See full document
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Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications
... Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications Yang-Shun Fan, Po-Tsun Liu, a) Li-Feng Teng, and Ching-Hui Hsu ... See full document
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