[PDF] Top 20 Diffusion barrier properties of sputtered TiB2 between Cu and Si
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Diffusion barrier properties of sputtered TiB2 between Cu and Si
... Diffusion Barrier Properties of Sputtered TiB 2 Between Cu and Si ...z and J. L. Wang Department of Materials Science and Engineering, ... See full document
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Characterization of sputtered titanium carbide film as diffusion barrier for copper metallization
... stability of the TiC x barrier layer between Cu and Si, junction leakage currents of the as- deposited and annealed Cu 共2000 Å兲/TiC x 共500 Å兲/p ⫹ n-Si ... See full document
6
Thermal stability of sputtered tungsten carbide as diffusion barrier for copper metallization
... investigation of transition metal nitrides including TaN, TiN, and WN, ...as diffusion barriers for Cu met- allization have been presented in the literature, 5-7 to date little infor- mation ... See full document
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Curing of polyimide and the effect of the TEOS SiO2 barrier layer on the electromigration of sputtered Cu with polyimide passivation
... type of long-chain macromol- ecule with a repeating monomer and a feature of cross-link between monomer chains, which provides high ...one of the most at- tractive interlayer ... See full document
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Interfacial reactions of rf-sputtered TiNi thin films on (100) silicon with a SiN diffusion barrier
... species and NiSi 2 compound forms towards the Si substrate at 400 ...C. Si and Ti atoms begin to migrate in specimens annealed at 600 ...4 Si 7 compound on the NiSi 2 side ... See full document
11
Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n+- junction diodes
... the barrier properties of Hf and nitrogen incorporated Hf films were investigated by Cu/Hf-N/Si ...Hafnium and hafnium nitride films were prepared by reactive rf-magnetron ... See full document
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Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n+-p junction diodes
... the barrier properties of Hf and nitrogen incorporated Hf films were investigated by Cu/Hf–N/Si struc- ...Hafnium and hafnium nitride films were prepared by reactive ... See full document
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Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n+-p junction diodes
... the barrier properties of Hf and nitrogen incorporated Hf films were investigated by Cu/Hf-N/Si ...Hafnium and hafnium nitride films were prepared by reactive rf-magnetron ... See full document
2
Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n(+)-p junction diodes
... against Cu diusion have been examined extensively in recent years ...diusion barrier for Cu because of the absence of any compounds between Cu and Ta, and ... See full document
10
Comparison of characteristics and integration of copper diffusion-barrier dielectrics
... the barrier dielectric. Although the intrinsic stress of SiN film is the lowest, the stress change is larger than that of SiCO film and moves from compressive to tensile stress after the 420 ... See full document
7
A comparative molecular dynamics study of copper trench fill properties between Ta and Ti barrier layers
... tantalum diffusion barrier layer in a damascene process was studied using molecular dynamics simulation with the embedded atom method (EAM) as interaction potential for the present alloy metal system which ... See full document
8
Properties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidation
... ~Al! and Al alloys in multilevel met- allizations of semiconductor ...1,2 Cu has beneficial factors compared with Al and Al alloys, such as low bulk resistivity 1,3 ...5 and low ... See full document
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Properties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidation
... ~Al! and Al alloys in multilevel met- allizations of semiconductor ...1,2 Cu has beneficial factors compared with Al and Al alloys, such as low bulk resistivity 1,3 ...5 and low ... See full document
7
Improving the electrical integrity of Cu-CoSi2 contacted n(+)p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier
... B. Cu–TaN –CoSi –Si Contact System Although ...film of CoSi between Cu and Si, the electrical properties of junction diodes not affected after annealing at ... See full document
8
TIW(N) AS DIFFUSION-BARRIERS BETWEEN CU AND SI
... TEM micrographs of bright field plan view and diffraction pattern for the as-deposited TiW(N) film: {a} plan view and (b) diffrac- tion pattern.. Electrical characteristics.[r] ... See full document
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Properties of thin Ta-N films reactively sputtered on Cu/SiO2/Si substrates
... film properties of 200 A Ta and Ta–N films reactively sputtered on the CurSiO rSi ...concentrations and the chemical states of Ta and N in the Ta and Ta–N ...growth ... See full document
5
Sputtered Cr and reactively sputtered CrNx serving as barrier layers against copper diffusion
... The results indicate that the thermal stability of Cu/Cr/pn junction diodes can be substantial- ly improved by using reactively sputtered CrN films with appropriate nitrogen contents in [r] ... See full document
7
Numerical and experimental analysis of Cu diffusion in plasma-treated tungsten barrier
... treatment and N 2 plasma is more effective than NH 3 ...2 and large leakage current den- sities in range of 10 ⫺7 to 10 ⫺4 are found for Cu/W 共N 2 )/n ⫹ -p and Cu/W 共NH 3 )/n ⫹ ... See full document
9
Barrier properties of very thin Ta and TaN layers against copper diffusion
... bias leakage current density for the Cu/TaN/p-n junction diodes of different TaN barrier thickness annealed at var- ious temperatures.. For the diodes with a 25 nm thick TaN barrier, the[r] ... See full document
8
Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers
... tures and reacts rapidly with both high-melting (HT 1 and HT 2 ) layers or with substrates to form intermetallic compounds ...feature of bonding at lower temperatures and usage at higher ... See full document
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