[PDF] Top 20 DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE
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DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE
... Transition-metal silicides have potential application in very large scale integrated circuits as metal-semiconductor inter- connections and as low-resistivity gates because t[r] ... See full document
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SiCl3CCl3 as a novel precursor for chemical vapor deposition of amorphous carbon films
... pressure chemical vapor deposition using a hot-wall ...that the films grown at 773 K contained 90% C and 10% Cl, while the films grown at 1273 K contained 100% ...studies. ... See full document
6
Effects of plasma treatment in the tungsten process for chemical vapor deposition titanium nitride barrier film beyond nanometer technology
... As the device shrunk to100 nm, the CVD TiN barrier filling would be limited by the process window of contact for both step coverage and plasma ...affects the step coverage ... See full document
6
Effects of the underlayer substrates on copper chemical vapor deposition
... shows a schematic diagram of the low-pressure CVD system used in this ...study. The apparatus consists of a reaction chamber 共for Cu film deposition兲, a ... See full document
8
Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor
... tolerance for thermal stability, low deposition temperature is ...investigate the moisture resistance of F x SiO y , the follow-up recording of moisture absorption by FTIR spec- ... See full document
4
Chemical Precursor for the Synthesis of Diamond Films at Low Temperature
... plasma chemical vapor deposition from a gaseous mixture of methane and ...characterize the carbon chemical species on the Si substrate from adamantane into ... See full document
4
Effect of adding Ar on the thermal stability of chemical vapor deposited fluorinated silicon oxide using an indirect fluorinating precursor
... responsible for Si–F bonds forming in F x SiO y film while adding CF 4 : ~1! the homogeneous reaction in the plasma; the active F and O atoms react with SiH 4 , thereby causing the ... See full document
4
Chemical vapor deposition of diamond on silicon substrates coated with adamantane in glycol chemical solutions
... Introduction The synthesis of diamond has attracted great interest owing to its outstanding properties such as high hardness, wide band gap, chemical inertness, and high thermal ...plasma ... See full document
5
Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor deposition
... Department of Physics and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 ~Received 25 September 1996; accepted 17 February 1997! Si and Ge films can be prepared under ... See full document
9
Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition
... shows the cross-sectional transmission electron mi- croscope (TEM) microphotographs of poly-Si TFT nonvolatile Ge-NC ...First, a 100-nm amorphous silicon (a-Si) active region layer was ... See full document
3
The novel precleaning treatment for selective tungsten chemical vapor deposition
... Department of Physics, National Sun Yat-Sen University, Taiwan c Department of Electronics Engineering and Institute of Electronics, National ChiaoTung University, 1001 Ta-Hsueh ...Abstract ... See full document
5
Deposition properties of selective tungsten chemical vapor deposition
... This work investigates the basic deposition properties of selective tungsten chemical vapor deposition (W-CVD) using the process of silane reduction of WF6 with the SiH4/WF 6 flow[r] ... See full document
4
Chemical Vapor Deposition (CVD) Chemical Vapor Deposition (CVD)
... 蓮花自潔效應 (Lotus self (Lotus self--cleaning effect) cleaning effect). 1μm 1μm[r] ... See full document
9
Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition
... studied the As doping effects on the optical characteristics of GaN films by time-integrated photoluminescence and time-resolved ...When As is incorporated into the film, ... See full document
4
Characteristics of selective chemical vapor deposition of tungsten on aluminum with a vapor phase precleaning technology
... Chemical vapor deposition of tungsten (CVD-W) has been proposed to be an important metallization technique in ultralarge-scale integrated circuit (ULSI) applica- tions.1-6 By controlling[r] ... See full document
9
Hot filament for in situ catalyst supply in the chemical vapor deposition growth of carbon nanotubes
... Filament for In Situ Catalyst Supply in the Chemical Vapor Deposition Growth of Carbon Nanotubes View the table of contents for this issue, or go to ... See full document
4
Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications
... The apparent difference in failure temperature between diode leakage measurement and SIMS data is perhaps due to the aluminum diffusion around the weak spot of T[r] ... See full document
6
The growth mechanisms of graphene directly on sapphire substrates by using the chemical vapor deposition
... Since the two-dimensional material graphene was fabri- cated by using the mechanical exfoliation method at 2004, massive efforts have been devoted to this research ...most of the effort is ... See full document
6
Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
... against the C 1s peak to eliminate the charging of the sample during ...analysis. The valence band UPS were performed using He I ...lines as excitation sources, and the ... See full document
9
Bias effect on the growth of carbon nanotips using microwave plasma chemical vapor deposition
... through the collision of carbon species in the growth ...while, the accelerated active hydrogen radicals will remove the other s p 2 clusters with lower active ...ation, the ... See full document
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