[PDF] Top 20 δ-Doped MOS Ge/Si quantum dot/well infrared photodetector

... the quantum dot infrared photodetectors (QDIPs) and quantum well infrared detectors ...the quantum dot and quantum well infrared ... See full document

... A quantum dot infrared photodetector 共QDIP兲 provides the advantages of no polarization selection rule 共normal in- cident 兲, small dark current, and high operation ...of quantum dots ... See full document

... thickness) Si cap was deposited as a top layer on self-assembled Ge dots for the subsequent growth of oxide by ...p-type doped with an estimated con- centration on the order of 1 10 cm ... See full document

... 964 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 22, NO. 13, JULY 1, 2010 Fig. 1. The 10 K spectral responses of Device A at 62.2 V. Fig. 2. The 10 K spectral responses of Device B at 62.0 V. for this QDIP sample. However, ... See full document

... GaAs quantum dots 共QDs兲 as the absorption medium, QD infrared photodetectors 共QDIPs兲 have revealed its potential in the application of infrared 共IR兲 ...conventional quantum-well in- ... See full document

... Experiment results shows that the current increases sharply at about 2 V reverse bias, we speculates that the avalanche effect occurred at this voltage. Two structures of dot and net are processed in our studies. ... See full document

... the quantum-well (QW) ground state of the InGaAs layer is responsible for the observed peak detection ...increasing dot height as shown in ... See full document

... 10-period quantum-dot (QD)/quantum-well (QW) mixed-mode infrared photodetector is investigated in this ...mid-wavelength infrared (MWIR) and long-wavelength ... See full document

... InAs/GaAs quantum-dot infrared photo- detectors 共QDIPs兲 with high responsivity, normal incident absorption, and wide detection wavelengths in the midinfra- red range have been successfully ... See full document

... tetragonal perturbation of the local (crystal and strain) field effects on the quantum well [4], were also proposed in their reports. In this paper, the polarization-resolved responses of multi-color ... See full document

... overall quantum efficiency is therefore ...-doped Si layers with a concentration of 1 ⫻10 10 cm −2 were inserted 2 nm before each QD layer to provide electrons to the ... See full document

... The simple metal-insulator-semiconductor (MIS) structure with tunneling insulator can make the GeISi QDIP compatible with Si ULSl process, and make it possible to have conven[r] ... See full document

... multilayer Ge–Si quantum-dot structure. Si bandgap is 1:17 eV at 20 K, and the QD barrier is 0:4 ...the infrared exposure, since the similar spectrum was observed for the ... See full document

... the MOS structure is a good characterization tool for material quality and can be used in the in-line inspection in the ...the MOS structure is much simpler than the p-i-n structure to measure the EL ... See full document

... The voltage dependence of the current is due to the increment of both of the Fermi level relative to the well edge and the electron concentration in the barrier with the ap[r] ... See full document

... In conclusion, we have successfully used the vertical integration method to integrate a GaAdAlGaAs GRINSCH quantum-well laser and a GaAdAIGaAs long-wavelength photodetec[r] ... See full document

... of Ge has high electron and hole mobilities and can reach the high performance tar- get in the future Si ...of Ge in the Earth make it difficult to replace ...共strained Si and strained ... See full document

... and well- developed semiconductor process, silicon-based solar cell has larger than 85% market ...InAs/GaAs quantum dot ...between Si/Ge heterojunction and indicated the possibility of ... See full document

... for quantum wells with higher ...resulting quantum effi- ciency of these quantum wells also ...the quantum wells in the uniform structure, the quantum efficiency is ... See full document

... Fig. 3. Noise current gain of samples A and B as a function of the average electric field at 77 K. FWHM which mainly comes from the size nonuniformity of the QDs in sample A. Although the QDs have three-dimensional ... See full document