[PDF] Top 20 Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si

... because of the lower writing voltage and faster switching speed than those of Flash ...size and device performance, one transistor 共1T兲 ferroelectric metal–oxide–semiconductor ... See full document

... the physical and electrical properties of Bi ...3.25 La 0.75 Ti 3 O 12 共BLT兲 thin films on ... See full document

... density of crystalline defects or carrier traps existing in the interface of Si and buffer ...layer. Al 2 O 3 has been considered as the candidate because the ... See full document

... curve of the Pt/SBT/Al 2 O 3 /Si 共MFIS兲 structure with a Pt top elec- trode under FGA ...variation on the memory windows is discerned compared to that 关Fig. 5共a兲兴 ... See full document

... progress of 1T FeMOSFET memory is obstructed by the interface reaction between ferroelectric materials and Si that greatly degrades the device characteristics ...between Si and ... See full document

... December 2, 2002; revised manuscript received March 12, ...speed, and nondestructive reading- out operation. 1-3 Among many issues in 1T ferroelectric memory fabrication, the manufacture ... See full document

... x Ti 1 ⫺x )O 3 共PZT兲 system has a complex phase diagram containing materials exhibiting unique properties such as piezoelectricity, pyroelectricity, and ...these properties are ... See full document

... publication 3 January 2002兲 In this letter, we present the results of the fabrication and characterization of 5 mol % MgO doped Ba ...Sr 0.3 TiO 3 共BST兲 films grown ... See full document

... Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan Received 24 February 2006; received in revised form 26 March 2006; accepted 29 March 2006 Abstract ... See full document

... the effect of surface nitridation on the following deposited HfO 2 , XPS spectra of Ge 2 p3 and Hf 4 f for HfO 2 deposited on germanium with ... See full document

... Figure 3a shows the XRD profiles for the LNO substrate and Fig. 3b shows the PTO films deposited on LNO bottom electrodes after annealing at different temperatures for 1 h in ... See full document

... content of SBT thin films increases with increasing anneal- ing temperature from 650 to 700 ◦ C at near the edge of Ir bottom ...the Bi depletion might result from the oxidation ... See full document

... TiN films, oxidation of TiN, pulsed laser deposition, YBCO/TiO 2 /STO bilayer structure, selective epitaxial growth process TiN thin films have been studied and used extensively ... See full document

... characteristic of SBT films on Al 2 O 3 /SiO 2 at 1 MHz is observed and the dielectric constant of Al 2 O 3 is about 9 ... See full document

... nealed Al films but a complex oxide film consisting of a crystalline layer sandwiched between two porous layers which in turn are sandwiched between two amorphous lay- ers is formed in A[r] ... See full document

... the AlO to use as an alternative gate ...quality, AlO is thermally oxidized from MBE-grown AlAs or Al on ...oxidized Al, which may be due to the weak AsO ... See full document

... characteristics of ferroelectric materials has the advantages of higher speed and lower power consumption than Flash memory and elec- trically erasable-programmable read-only memory ... See full document

... The effect of Bi 2 O 3 and Sb 2 O 3 addition on the microstruc- ture uniformity of ZnO is investigated in the present ...amount ... See full document

... PbTiO 3 thin films have been prepared on Si substrates with ultra-thin SiO 2 and Al 2 O 3 buffer layers by chemical solution deposition, ... See full document

... Pb(Zr 0.53 Ti 0.47 )O 3 共PZT兲 films were deposited on SrRuO 3 (SRO)/Ru/ SiO 2 /Si substrates using a sol–gel method, in which SrRuO 3 ... See full document