[PDF] Top 20 EFFECT OF SPUTTERING POWER ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF RF MAGNETRON-SPUTTERED ITO FILMS

... terms and conditions apply. Effect of sputtering power on the structural and optical properties of RF magnetron ... See full document

... Institute of Electronics and Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan A systematic study was performed on the structural and ... See full document

... The carrier concentration increases and Hall mobility decreases with increasing rf power, as shown in Table II. The increase in sputtering power increases the self-bias at the target, wh[r] ... See full document

... in the present work. Figure 4 shows the XPS O 1s spectra of the as-deposited ITO films prepared under various oxygen ...appears on the higher-energy side of ... See full document

... Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, ROC Available online 14 September 2006 Abstract A systematic study of ... See full document

... cated on soda-lime glass substrates by using rf magnetron sput- tering at room ...temperature. The sputtering pressure dependence of the structural, morphological, ... See full document

... monitoring the electric and optical properties through careful control of the processing parameters, successful fabrication of devices based on Ga-doped ZnO thin ... See full document

... that the structural, electrical, and optical properties of the sputtered ZnO:Al thin films depend on working ...pressure. The SEM observation ... See full document

... studied the structural and optical properties of (Ba, Sr)TiO 3 (BST) films deposited on the transparent substrates at various temperatures of 350–650 ... See full document

... to the temperature range, 700–1000 °C, 共where the anatase-to-rutile phase transforma- tion would occur ...is the for- mation of significant quantity of oxygen vacancies in the ... See full document

... Among the various dopants available, for n-type ZnO thin films, Group III metals, such as Al, In and Ga have been found to be the most suitable ...enhance the electrical and ... See full document

... reactive magnetron sputtering from a vanadium target in an Ar–O 2 gas mixture and pure O 2 ...For the films deposited in the gas mixture, the Ar flow rate was controlled at 20 sccm ... See full document

... is the crystalline size, λ is the wavelength of the X-ray radiation (Cu Kα, λ = ...is the Bragg angle, and β is the line width of the (002) diffraction peak, ... See full document

... to the enlargement of crystallite ...with the increase in annealing temperature, as shown in ...with the anneal- ing temperature, as shown in ...to the reduction of grain ... See full document

... Department of Electronics Engineering and Nano Research and Development Center, Kun Shan University of Technology, Taiwan, ROC b Department of Mechanical Engineering, National Kaohsiung ... See full document

... Ar and Ar/N 2 ...from the PET substrate would contribute to form the TiN x O y films during ...deposition. The sputtering parameters used in this study are listed in Table 1, in ... See full document

... variety of meth- ods, such as radio frequency magnetron sputtering [13], chemical vapor deposition (CVD) [14], molecular beam epitaxy (MBE) [15] and pulsed laser deposition ...all of ... See full document

... film. The optimum conditions for the growth of 150-nm ZnO：Fe films are set with ZnO RF power = 30 W、Fe RF power = 10 W、working pressure = 1 mTorr、growth temperature ... See full document

... In the present study, the mechanical properties, including microhardness, pull-off adhesion, and scratch adhesion of SiO coated ITO films are inves- 2 tigated and ... See full document

... dc power, sputtering pressure, substrate temperature and deposition ...columns and nine rows) orthogonal array was ...dc magnetron sputtering, in an Ar gas ...contamination. ... See full document