[PDF] Top 20 Effect of thickness on the structural and electrical properties of sol-gel-derived (Zr, Sn)TiO4 thin films

... 2006 The Electrochemical ...that of thermally grown silicon dioxide 共SiO 2 兲 is required for the sub- 100 nm metal-oxide-semiconductor field-effect transistor 共MOS- FET 兲 to improve the ... See full document

... donors and acceptors in our samples is not surprising because of low-purity of chemical precursor ...side of these emission lines are the one and two LO-phonon sideband of ... See full document

... in the TGA curve. Thus, 800 °C is set as the annealing temperature in this ...study. The CCTO films prepared by SFA process with deposition layer numbers 2, 3, 4, and 5 possess 210, ... See full document

... ZnO thin films. ZnO exhibits a wide range of conductivity; its behavior varies from metallic to ...Its electrical characteristics can be controlled by doping with ternary elements or by ... See full document

... illustrates the high-frequency 共1-MHz兲 capacitance vs gate voltage characteristics 共C–V curves兲 for the MIS capacitors prepared from sol-gel-derived ZrO 2 dielectrics under various ... See full document

... As the annealing temperature increased above 650 °C in N 2 , a single CuFeO 2 phase was ...obtained. The binding energies of Cu-2p 3/2 , Fe-2p 3/2 , and O-1s were ...eV and 530.0 ± 0.1 ... See full document

... one of the promising candidates for the next generation nonvolatile memory ...[3], and tunable microwave device ...switching properties and was suitable for nonvolatile memory ... See full document

... (SZO) thin films on LaNiO 3 /SiO 2 /Si substrate are synthesized by sol-gel method to form metal-insulator-metal (MIM) sandwich ...structure. The physical and ... See full document

... voltage on the device, the oxygen vacancies, metallic elements or carbon would form conducting filaments as the conducting paths and the leakage-state is changed to the ... See full document

... min, the as deposited layer was heat-treated at 200 °C for 10 min and then annealed at 400 °C for 30 ...min. The coating and heating steps were repeated to obtain the desired film ... See full document

... to the material of high dielectric layers, the characteristic of current leakage is very important, and being worth to ...works and researches are few, especially in preparation ... See full document

... Unlike the results of the previous work w4x, temperature only has a minor effect on the crystallinity of the SBT ...at the temperature of 700 8C, ... See full document

... ZnO thin films can be deposited with a wide variety of meth- ods, such as radio frequency magnetron sputtering [13], chemical vapor deposition (CVD) [14], molecular beam epitaxy (MBE) [15] and pulsed ... See full document

... micrographs of the films prepared using three different concentration precursor solutions and annealed at 700 ◦ C, showed varied microstructure with change in ...spherical and platy ... See full document

... have the same crystal struc- 2 2 7 ture and similar lattice ...3q and Y 3q ions are structurally indistinguishable. In the pyrochlore phase such as Yb Ti O , Ti 2 2 7 4q ions are six ... See full document

... This article may be used for research, teaching, and private study purposes. Any substantial or systematic reproduction, redistribution, reselling, loan, sub-licensing, systematic supply, or distribution in any ... See full document

... Crystalline of 1 wt % ZnO-doped ZST thin films depos- ited on Si 共100兲 by rf magnetron sputtering was ...investigated. The Ar/O 2 ratio and substrate temperature were important ... See full document

... Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, ROC Available online 14 September 2006 Abstract A systematic study of ... See full document

... SIMS results as shown in Fig. The polysilicon trapping model, a: One-dimensional grain structure, b: Energy-band diagram of partially depleted grains for p-type dop[r] ... See full document

... Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan Received 24 February 2006; received in revised form 26 March 2006; accepted 29 March 2006 Abstract ... See full document