[PDF] Top 20 Electrical Properties and Reliability of ZnO-Based Nanorod Current Emitters

... Ga-doped ZnO nanorods combined with the formation of tip structure on top of a ZnO nanorod by oxygen plasma treatment are employed to improve the field emission properties ... See full document

... effects of thermal annealing on the physical, electrical properties and reliability of porogen-containing and porogen-free ultralow-k dielectrics prepared by ... See full document

... leakage current densities for all the films are sketched in ...leakage current of pure silicon carbide (SiC) is much larger than the doped ...amount of SiN bonds, which exist randomly in a-SiC ... See full document

... Results and discussion Fig. 2(a) presents the FT-IR absorption spectra of porous low-k dielectrics before and after moisture ...treatment, and the intensity of the Si–OH bonds increased ... See full document

... formation of the Si-O network and the extraction of Si-CH 3 bonds, increasing the dielectric ...leakage current density versus the electric-field was measured from the MIS structure with low-k ... See full document

... series of electrical tests is also performed on the bonded ...after current stressing, 1000 cycles of temperature cycling, and 200 h of humidity ...good electrical ... See full document

... quality of polysilicon oxide 共polyoxide兲 plays an important role in the performance of polysilicon TFTs 22 and nonvolatile ...The electrical properties of the polyoxide are ... See full document

... emission current density versus applied electric field curves under the gate voltages of 0, 10 and 18 ...region and saturation ...from ZnO NW emitters without applying V g ... See full document

... nanorods and study the electrical and optical properties of a single Sb 2 Se 3 nanorod with an average size of 70 nm in diameter and a length of about 1 mm ... See full document

... amounts of silver particles, 0.08–7.7 mol%, are mixed with zinc oxide powder and subsequently co-fired at 800–1200 ◦ ...effects of Ag addition on the microstructural evolution and ... See full document

... Institute of Electronics Engineering, and Department of Electrical Engineering, National Taiwan University, Taipei, 10617 Taiwan, Republic of China ABSTRACT One-dimensional ... See full document

... component, and then the sensitivity of the ZnO NW photodetector could be extremely ...sensitivity and output ...influence of bias on the reset time is much dramatic since the reset time ... See full document

... structural, electrical, and optical properties of the sputtered ZnO:Al thin films depend on working ...increase of working ...path of sputtering gas, under higher working ... See full document

... presence of Li in ZnO NWs is con firmed through EELS spectrum ...level of the Li dopant is estimated to be ...coercivity and saturation magnetization of the Li-doped ZnO NWs at ... See full document

... incorporation of nitrogen in HfO 2 gate dielectrics has been reported to be beneficial for electrical ...the electrical characteristics of HfO 2 thin film with plasma nitridation process or ... See full document

... surge of a good number of relevant publications. 1,2 The interest in ZnO is aroused not only by the transparent conducting characteristics of doped ZnO films but also by the prospects ... See full document

... responsivities of the ZnO MSM PDs with 5 V applied bias were shown in ...photo-/dark current, responsivities, UV-to-visible rejection ratios for ZnO NR, and ZnO film MSM ...The ... See full document

... Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, ROC Available online 14 September 2006 Abstract A systematic study of ... See full document

... Chen and Po-Tsung Lee * Abstract A Si quantum dot (QD)-embedded ZnO thin film is successfully fabricated on a p-type Si substrate using a ZnO/Si multilayer ...better electrical ... See full document

... resistance, and A is the cross-section area of the ...that of pure ZnO NWs by 1  2 orders ...Sb-doped ZnO NW photodetector at a bias of 0.5 V. The schematic diagram and ... See full document