[PDF] Top 20 Improved Electrical Performance and Reliability of Poly-Si TFTs Fabricated by Drive-In Nickel-Induced Crystallization with Chemical Oxide Layer

... RESULTS AND DISCUSSION Figure 3 exhibits the I D –V G transfer characteris- tics of TFTs at a drain bias of 5 V for W/L = 10 lm/ 10 lm ...measured and extracted key device parameters ... See full document

... to drive Ni in the ␣-Si layer. Compared with MIC process, DIC process can effectively reduce the Ni concentration, thus reducing the Ni-related ...bonds and strain bonds, thus ... See full document

... investigation of poly-Si TFTs using the DILC process had led to the development of a suitable process for AMOLED man- ...ufacturing. In DILC, a F + implantation was used to ... See full document

... into chemical solution before depositing the Ni ...the electrical performance of MIC TFTs with chem- ical oxide layer was significantly ...Compared with con- ... See full document

... (α-Si) layer was deposited onto a 500- nm-thick oxide-coated silicon wafer by low pressure chemical vapor deposition (LPCVD) ...deposited and patterned to form 20-μm-wide lines, ... See full document

... character of MIC/MILC TFTs performance, was not decreased with the passivation process ...(3). In this study, a cap oxide layer was employed to substantially decrease ... See full document

... RESULTS AND DISCUSSION Figure 1 displays the silicide etching holes after ...residues of the Ni silicides that had been etched away by a silicide-etching ...shown in Fig. 1, Ni concentration ... See full document

... application in active-matrix liquid crystal displays (AMLCDs) ...the crystallization time and temperature of amorphous silicon (α-Si) have been carried ...out. ... See full document

... application in active-matrix liquid crystal displays (AMLCDs) on cheap glass substrate ...high performance poly-Si nanowire (NW) TFTs have been fabricated by ... See full document

... MIC poly-Si TFTs were fabricated in this ...Islands of poly-Si regions on the wafers were defined by reactive ion etching ...(TEOS) oxide layer ... See full document

... combined with Ni-metal- induced lateral crystallization (NILC) polycrystalline silicon thin- film transistors (poly-Si ...the electrical performances were improved because ... See full document

... a-Si TFTs but also the uniformity of device performance can be further ...sake of simple analysis and comparison, a sche- matic cross-sectional view of the n-channel ... See full document

... section of the proposed poly-Si ...devices in this letter were fabricated on thermally oxidized Si ...buffer layer was deposited using a PECVD system at 350 C with ... See full document

... investigation of the effects of F + -implantation process on the electrical characteristics and reliability of MILC poly-Si TFTs has led to the development ... See full document

... ESULTS AND D ISCUSSION Transfer characteristics of SPC and MILC poly-Si TFTs with NW channels are compared in ...L of 1 µm and a channel width W ... See full document

... began with 4-inch quartz wafer sub- strates where wet oxide films of 500 nm were ...-Si) layer with a thickness of 100 nm was deposited using low-pressure chemical ... See full document

... S/D, and Tungsten-clad S/D poly-Si TFTs were proposed to suppress the large parasitic resistance ...Silicide poly-Si TFTs were also suggested recently ...Nevertheless, ... See full document

... characteristics and field-effect mobility versus the gate voltage of TFTs in the random grain structure for W = L = 20 lm at V DS = 5 V and V DS = ...sured and extracted key ... See full document

... Nanowire TFTs With Metal-Induced Lateral Crystallized Poly-Si Channels Chia-Wen Chang, Student Member, IEEE, Szu-Fen Chen, Che-Lun Chang, Chih-Kang Deng, Jiun-Jia Huang, and ... See full document

... voltage and mo- bility characteristics comparable to those of the control ...bonds in the grain boundaries, influence the threshold voltage and the subthreshold ...mobility and the ... See full document