[PDF] Top 20 Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions

... Conclusion In conclusion, InGaN/GaN LEDs with graded-thickness multiple quantum wells were investigated both experimentally and ...achieved in the GQW designed MQWs, in which the ... See full document

... substrate by a metal-organic chemical vapor deposition ...consisted of a Si-doped n-GaN layer, In x Ga 1 −x N/GaN multiple quantum wells, a Mg-doped p-AlGaN electron blocking layer, and ... See full document

... grown by metal-organic chemical vapor deposition exhibited better electrical characteristics, and much higher output power at high current density, as compared to conventional ...the efficiency droop ... See full document

... most of the works involving the improvement in the hole transport in the active region have a fatal disadvantage, that is their efficiencies are relatively low at standard-operation ... See full document

... quality of our building environments, espe- cially refers to GaN-based light-emitting diodes ...application of solid-state lighting, LEDs have to be operated at a very ... See full document

... ABSTRACT In this study, we fabricated and compared the performance of LEDs of InGaN-based UV MQWs active region with ternary AlGaN and quaternary InAlGaN barrier ...morphology of ... See full document

... Introduction In the last decade, GaN-based light-emitting diodes (LEDs) have been widely used because of their ability to tune wavelengths from ultraviolet to visible ... See full document

... performance of GaN-based light emitting diodes 共LEDs兲 due to their widespread application in solid-sate lighting, dis- play technology, color printing, and optical ...One ... See full document

... the active regions of the LED structures with In ...and In 0.3 Ga 0.7 N QWs, respec- tively, at the input current of 480 ...positions of the QWs are marked with gray ... See full document

... mance of LEDs of InGaN-based UV MQWs active region with ternary AlGaN and quaternary InAlGaN barrier ...morphology of quaternary InAlGaN layer can be observed in ...the ... See full document

... Schematics of the InGaN-based green LED with pre-TMIn flow treatment during the MQWs’ ...chart of the reactant sources in MQWs’ growth. Inset: photograph of the green LED with pre-TMIn ... See full document

... characteristics of the InGaN green light-emitting diode (LED) with pre-trimethlyindium (pre-TMIn) flow ...treatment. By using pre-TMIn flow treatment, a relatively large radiative coefficient ... See full document

... out of the active region, Auger recombination, and insufficient transport of holes have been identified as the most possible reasons for ...transport of holes might be the most important ... See full document

... emission efficiency of InGaN/GaN multiple quantum wells (MQWs) and the V-shape pits (V-pits) forming along the threading dislocation ...TDs. By inserting different InGaN/GaN ... See full document

... image of GaN epilayer overgrown on the GaN NRs template with SiO 2 ...top of it, the GaN epi- layer can only grow on the sidewall of ...combination of GaN epilayer ... See full document

... broadening of EL spectra in GQW ...distribute in the narrower wells in GQW LED ...recombine in nar- rower wells, the intensity of shorter-wavelength part in emis- sion ... See full document

... the active region as well. Under these circumstances, a large amount of minority carrier holes accumulate in the last well next to the p-GaN side, which means only the last quantum well next ... See full document

... enhancement of LED output power in the NR LEDs, temperature-dependent PL measurements were ...plots of the normalized integrated PL intensity for the PL emission over the temperature ...energies ... See full document

... apply. Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography View the table ... See full document

... Abstract—The light-output power of GaN-based light-emitting diodes (LEDs) was enhanced by microhole array pattern and roughened GaO x film grown on the exposed ... See full document