[PDF] Top 20 Influence of dislocation density on photoluminescence intensity of GaN
Has 10000 "Influence of dislocation density on photoluminescence intensity of GaN" found on our website. Below are the top 20 most common "Influence of dislocation density on photoluminescence intensity of GaN".
Influence of dislocation density on photoluminescence intensity of GaN
... influence of dislocation density on photoluminescence intensity is investigated experimentally and compared to a ...model. GaN samples were grown by molecular beam epitaxy ... See full document
5
Influence of Mg-containing precursor flow rate on the structural, electrical and mechanical properties of Mg-doped GaN thin films
... characteristics of GaN:Mg thin films obtained by using MOCVD process with the various Cp2Mg flow rates are investigated by XRD, AFM, Hall measurement and nanoindentation ...excessive dislocation ... See full document
6
Influence of the GaN capping thickness on the strain and photoluminescence properties of InN/GaN quantum dots
... properties of InN/GaN QDs. A single crystalline 10-nm thick GaN layer was capped on the InN QDs by the flow-rate modulation epitaxy (FME) ...reduction of the lattice constant with a ... See full document
4
Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
... Department of Electrophysics, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan 共Received 20 February 2009; accepted 26 May 2009; published online 26 June 2009兲 The crystal quality ... See full document
4
Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density
... TDD of N-face GaN wing in region 1 was about 3 ⫻10 7 cm −2 , three orders of magnitude lower than planar ...lower dislocation density in region 3 in comparison to region 4 was in ... See full document
4
Influence of molecular dipoles on the photoluminescence and electroluminescence of dipolar spirobifluorenes
... optical density and, hence, the intensity of photoluminescence (PL) or electroluminescence (EL) of the “dimeric” analogs is presumed to increase, which is beneficial for organic ... See full document
10
Plasmonic Gold Nanorods Coverage Influence on Enhancement of the Photoluminescence of Two-Dimensional MoS2 Monolayer
... PL of a monolayer MoS 2 in the presence of gold nanorods that can be synthesized in large ...area density of gold nanorods up to 40 μ m −2 ...nanorod density was more than 40 μ m −2 , ... See full document
9
Influence of V/III Flow Ratio on Growth of InN on GaN by PA-MOMBE
... the influence of the V/III flow ratio on the film structure, surface morphology, film compositions, and optical and electrical properties using scanning electron microscopy (SEM), atomic force ... See full document
6
Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN
... influence of the LT-GaN nucleation layer on the quality of the GaN template was investigated by the study of the surface morphology of the nucleation layer, and of ... See full document
4
Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy
... range of emitting wavelengths from ultra- violet (UV) to near infrared (NIR) and a high electric-optical conversion ...phenomenon of efficiency droop, the efficiency of GaN-based LEDs is ... See full document
7
Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films
... laser on the GaN ...spectra of HVPE GaN and the thick GaN substrate. The spectra of the samples demonstrate three peaks located at ...replica of donor-bound exciton (I 2 ... See full document
4
Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence
... Department of Electrophysics, National Chiao Tung University, Hsinchu, 300, Taiwan, ...properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase ...recombination ... See full document
4
Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells
... Keyword: InGaN/GaN multiple quantum well, barrier growth temperature, strain, phase separation, phase separation enhance layer, multi-peak.. INTRODUCTION.[r] ... See full document
9
Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
... Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method View the table of contents for this issue, or go to the journal homepage for more ... See full document
4
Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs
... origin of shift of V GS on , more measurements were performed with drain voltage set to lower values of 5 V and 10 V and a normalized distance R = L GD /L SG was used to simplify the geometry ... See full document
5
Photoluminescence studies of GaN films of different buffer layer and doping concentration
... Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, ...23, Photoluminescence (PL) measurements of films with various buffer thicknesses and Si-doping concentrations ... See full document
6
Photoluminescence and Raman studies of GaN films grown by MOCVD
... grown on silicon substrate lowers cost and uses better heat dissipation in comparison with sapphire substrates but it is not as good as GaN grown on sapphire ...PL of two samples, called A and ... See full document
9
Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs
... figure of merit of the efficiency of the passivation layers to reduce the surface trapping effect, lim- iting the current in the device under RF large signal oper- ation, SiN x and SiO x N y (n P ... See full document
5
Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy
... revision of its band gap energy to ...range of III-nitride materials into near infrared, covering the wavelength range for telecommunications ...number of growth techniques in the past few years, ... See full document
4
Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching
... edge of ELO GaN. AFM observation of etched ELO GaN displayed high densities of etch pits clustered in the ‘‘window’’ region and the coalescent line of two growing ...free ... See full document
4
相關主題