[PDF] Top 20 Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching
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Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching
... density of GaN nano-cones. Although the exact mechanism of the formation of such nano-cone structures is not fully understood yet, it seems to be related to the ... See full document
5
Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method
... simulated light propagation and reflection using the ray tracing method provided by Advanced System Analysis Pro- gram ...on GaN-based LED ...m with and with- out rough top ... See full document
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Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching
... as light-emitting diodes (LEDs) and laser ...brightness GaN-based LEDs have become a strong candidate for applications such as displays, traffic signals, backlight for cell phones, ... See full document
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Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes
... peaks of their typical room-temperature EL spectra are all located at 460 nm at a driving current of 20 ...guided light can be extracted outside LED chips by scatterings at top transmitted PQC ... See full document
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Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography
... processes with a mesa area of 335 m × 335 m. A SiO 2 layer with thickness of 300 nm is deposited onto the LED sample surface by using plasma enhanced chemical vapor deposition ...wet ... See full document
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Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography
... Abstract GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography ... See full document
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Investigation and Comparison of the GaN-Based Light-Emitting Diodes Grown on High Aspect Ratio Nano-Cone and General Micro-Cone Patterned Sapphire Substrate
... mance GaN-based LEDs by using a high aspect ratio cone-shape nano-patterned sapphire substrate ...utilized nano-imprint lithography (NIL) and dry-etching system to fabri- ... See full document
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Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes
... 共ICP兲 etching to remove the top u-GaN layer and then a chemical etching using 6M KOH solution at 60 ° C for 10 s to remove possible damaged regions caused by the ICP ...laser ... See full document
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Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
... III-nitrides based semiconductors have been successfully employed to realize short-wavelength light emitting diodes (LEDs) and laser diodes ...studies of ... See full document
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High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorod by Glancing-Angle Deposition
... laser of wavelength 248 nm with a pulse width of 25 ns was used to remove the sapphire ...backside of the sapphire substrate onto the sapphire/GaN interface to decompose GaN into ... See full document
4
High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness
... VLED structure with an ODR, since the ODR is nonconducting, we need to integrate some conducing channels inside the ODR to contact with ITO for vertical cur- rent ...array of line ... See full document
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Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure
... the light field intensity, A 0 is the amplitude, b is the slit width, and d is the separation of the ...pillar structure, parameters b and d directly correspond to the spac- ing and the pitch ... See full document
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Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography
... Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography View the table ... See full document
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GaN-based high-Q vertical-cavity light-emitting diodes
... our vertical cavity with both high-reflectivity DBRs (R = 98% and 99%) and ITO current-spreading layer was calculated to be about 890, without taking into account the absorption in the InGaN/GaN ... See full document
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Investigation of GaN-based light-emitting diodes using double photonic crystal patterns
... LEDs with photonic crystal (PhC) patterns on an n- and a p-GaN layer by nano-imprint lithog- raphy (NIL) are fabricated and ...current of 20 mA on Transistor Outline (TO)-can package, ... See full document
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Metal organic chemical vapor deposition growth of GaN-based light emitting diodes with naturally formed nano pyramids
... Growth of GaN-Based Light Emitting Diodes With Naturally Formed Nano Pyramids View the table of contents for this issue, or go to the journal homepage for ... See full document
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Self-Assembled Two-Dimensional Surface Structures for Beam Shaping of GaN-Based Vertical-Injection Light-Emitting Diodes
... Abstract—Enhanced light extraction and beam shaping of GaN-based vertical-injection light-emitting diodes (VI-LEDs) employing biomimetic surface structures ... See full document
3
GaN-based microcavity polariton light emitting diodes
... realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature ...microcavity structure consists of ... See full document
7
Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons
... range of injection currents we applied, consistent with the previous discussion that the synthesized ZnO NRs creates better index matching for photon escaping in a manner correlated with a ... See full document
9
Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process
... wet-etching, GaN, light extraction, near-ultraviolet (NUV) light-emitting diode ...in GaN-based blue, green and ultraviolet light emitting diodes ... See full document
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