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[PDF] Top 20 Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator

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Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator

Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator

... on transistors at lower ...the gate capacitance: to reduce the thick- ness of the gate-dielectric [3] and to use a high-k material as a gate-dielectric ...trolling gate leakage ... See full document

5

Low-voltage organic thin-film transistors with polymeric nanocomposite dielectrics

Low-voltage organic thin-film transistors with polymeric nanocomposite dielectrics

... vice with a neat PVP gate insulator, ...threshold voltage of the OTFT are .... With 15 wt% of TiO 2 nanoparticles blended into the dielectric layer, ...pared with that of the ... See full document

5

Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO3 Gate Dielectric Incorporation

Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO3 Gate Dielectric Incorporation

... drain voltage, gate voltage, channel length, channel width, and gate insulator capacitance per unit area, ...a low operation voltage of 1.5 V, but suffers a low I ... See full document

3

Carbon attachment on the aluminum nitride gate dielectric in the pentacene-based organic thin-film transistors

Carbon attachment on the aluminum nitride gate dielectric in the pentacene-based organic thin-film transistors

... A. Film deposition and device fabrication procedures Heavily doped n-type silicon 共100兲 wafers with a doping concentration of 5 ⫻10 15 cm −3 were used as ...AlN film was deposited on these ... See full document

6

Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

... Abstract—Pentacene organic thin-film transistors (OTFTs) with a high-κ HfLaO dielectric were integrated onto flexible polyimide ...such as a low subthreshold swing of ... See full document

3

Organic thin-film transistors with reduced photosensitivity

Organic thin-film transistors with reduced photosensitivity

... threshold voltage becomes lower because of the use of an insulator with a higher dielectric ...consistent with previous reports on OTFTs with adopted high-j insulators ... See full document

6

Low subthreshold swing HfLaO/pentacene organic thin-film transistors

Low subthreshold swing HfLaO/pentacene organic thin-film transistors

... pentacene-based organic thin-film ...such as a low subthreshold swing of 0.078 V/dec, a threshold voltage of ...along with an ON – OFF state drive current ratio of ...high ... See full document

3

Novel Chemical Route to Prepare a New Polymer Blend Gate Dielectric for Flexible Low-Voltage Organic Thin-Film Transistor

Novel Chemical Route to Prepare a New Polymer Blend Gate Dielectric for Flexible Low-Voltage Organic Thin-Film Transistor

... used as a substrate support to establish these speci fic bending conditions presented in the inset of Figure S4 in the Supporting ...the thin- film phase in the pentacene film resulted minor changes in ... See full document

9

A New Pixel Circuit for Driving Organic Light-Emitting Diode With Low Temperature Polycrystalline Silicon Thin-Film Transistors

A New Pixel Circuit for Driving Organic Light-Emitting Diode With Low Temperature Polycrystalline Silicon Thin-Film Transistors

... such as uncontrollable gate oxide trap density and grain size of ...poly-Si. As a result, various compensation methods have been reported which can be classified into voltage driving [1]–[8], ... See full document

5

High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric

High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric

... After gate patterning, the TaN surface was treated by NH + 3 plasma that is important to reduce gate leakage cur- rent [17], [18], ...HfLaO gate dielectric was deposited by PVD at room temperature, ... See full document

3

Improved performances in low-voltage-driven InGaZnO thin film transistors using a SiO2 buffer layer insertion

Improved performances in low-voltage-driven InGaZnO thin film transistors using a SiO2 buffer layer insertion

... 3 gate insulator results in a reduced effec- tive dielectric constant but with significant improved char- acteristics including a high I on /I off of ...lowered gate leakage and reduced ... See full document

5

Organic thin-film transistors with color filtering functional gate insulators

Organic thin-film transistors with color filtering functional gate insulators

... used as the gate ...the as- prepared color filters and then cured at 100 ° C for 1 ...insulators as the semiconductors of the ...deposited as the source 共S兲 and drain 共D兲 electrodes ... See full document

4

CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURES

CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURES

... In contrast to conventional TFTs with pure thermal oxides as gates, TFTs with 0/N gate structures can attain a higher ON/OFF current ratio and carrier mobility by reducing the equivalent[r] ... See full document

5

Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage

Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage

... high-performance thin-film transistor (TFT) fabricated using TiO 2 and InGaZnO semiconducting ...a low threshold voltage of ...a low drive voltage of <2 V, were ... See full document

4

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

... electronics, low-temperature-pro- cessed TFT technology is ...and low contact resistance could be realized by in-situ doping in the nc-Si:H thin film with a low thermal ...Si ... See full document

6

Improved air stability of n-channel organic thin-film transistors with surface modification on gate dielectrics

Improved air stability of n-channel organic thin-film transistors with surface modification on gate dielectrics

... Organic thin film transistors 共OTFTs兲 are currently the subject of intensive research owing to their potential appli- cations in low-cost, flexible electronic products, such as ... See full document

4

PERFORMANCE AND OFF-STATE CURRENT MECHANISMS OF LOW-TEMPERATURE PROCESSED POLYSILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITED SIO2 GATE INSULATOR

PERFORMANCE AND OFF-STATE CURRENT MECHANISMS OF LOW-TEMPERATURE PROCESSED POLYSILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITED SIO2 GATE INSULATOR

... Fig. A typical distribution of interface trap density for MOS capacitors with LPD Si02 as dielectric. It may result from fast trapping centers near the middle-gap c[r] ... See full document

7

Submicron organic thin-film transistors fabricated by film profile engineering method

Submicron organic thin-film transistors fabricated by film profile engineering method

... [http://dx.doi.org/10.1063/1.4892404] Organic thin-film transistors (OTFTs) have attracted considerable attention because of their potential for use in electronic devices and displays, such ... See full document

5

Effects of process temperature on polysilicon thin film transistors with liquid-phase deposited oxides as gate insulators

Effects of process temperature on polysilicon thin film transistors with liquid-phase deposited oxides as gate insulators

... To develop active matrix liquid crystal displays (AMLCDs), polysilicon thin film transistors (poly-Si TFTs) in peripheral device circuits must be fabricated either on quartz or on large [r] ... See full document

5

Planar junctionless poly-Si thin-film transistors with single gate and double gate

Planar junctionless poly-Si thin-film transistors with single gate and double gate

... top gate, the DG devices also showed better electrical characteristics than the SG ones, such as a steeper subthreshold swing and a lower ...better gate controlla- bility and higher conduction ...the ... See full document

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