[PDF] Top 20 Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs
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Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs
... key process step for the MSB FinFET and is dis- cussed extensively in the next ...the characteristics of the SB, BF ions were im- planted to silicide at 30 KeV to a dose of cm , fol- ... See full document
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On the Experimental Determination of Channel Backscattering Characteristics-Limitation and Application for the Process Monitoring Purpose
... dependent channel backscattering extraction method that can self- consistently determine the temperature sensitivity of the low-field mobility and the critical length in nanoscale ...voltage ... See full document
6
Hot-carrier effects in p-channel modified Schottky-barrier FinFETs
... Abstract—High-performance p-channel modified Schottky- barrier SOI FinFETs (MSB pFinFETs) with low temperature source/drain annealing process was recently suggested for ... See full document
3
Short-channel metal-gate TFTs with modified Schottky-barrier source/drain
... tial barrier for holes of about ...potential barrier width, carriers can tunnel through the ...midgap of Si, hole tunneling is easier than electron ...be p-type devices. Comparing with ... See full document
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A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS
... Comparison of subthreshold characteristics of the rinsed asymmetric PMOS (solid line) and the conventional PMOS (dashed line) with W/L = 25 i~m/9 ]~m. ) unless CC License in pla[r] ... See full document
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A novel 25-nm modified Schottky-barrier FinFET with high performance
... Abstract—High-performance modified Schottky barrier (MSB) FinFET with 25-nm channel length and fully silicided source/drain (S/D) is proposed for the first ...ultrashort and ... See full document
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Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer
... 共HEMTs兲 and heterojunction bipolar transistors 共HBTs兲 for power applications have been under extensive ...to p-GaN, especially in the GaN-based HBT ...rate of acceptors in the base and the ... See full document
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Method for extracting gate-voltage-dependent source injection resistance of modified Schottky barrier (MSB) MOSFETs
... The process flow of an MSB MOSFET has been previously described in detail ...important process and structure parameters here. The thicknesses of the Si active layer and buried ... See full document
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Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs
... integrity and reliability of such gate oxides are therefore crucial for ULSI ...sub-micrometer p-channel metal-oxide-semiconductor 共MOS兲 ...numbers of interface states and ... See full document
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Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature
... temperature of the LTG GaN cap layer was 550 ° ...-GaN, and then Ti/ Pt/ Au 共20/20/300 nm兲 was deposited on the exposed n + -GaN to serve as an Ohmic ...cosputtering process with an Ar discharge. The ... See full document
3
Diffusion barrier characteristics and shear fracture behaviors of eutectic PbSn solder/electroless Co(W,P) samples
... formation of continu- ous P-rich layer may deter subsequent Co–Sn ...growth of secondary IMCs from the P-rich layer into solder was ...supply of Co and Sn elements would be ... See full document
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Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain
... Institute of Science and Tech- nology, Lungtan, working on missile ...Semiconductor Process and Design Center, Texas Instruments, he moved on to Silicon Valley and had since worked with ... See full document
6
Fabrication and interfacial characteristics of surface modified Ag nanoparticle based conductive composites
... surfaces of Ag nanoparticles via inter-polymer complexation is ...interfacial characteristics and thermal stability of these surface-modied Ag nanoparticles were studied to eluci- date the ... See full document
11
Diffusion Barrier Characteristics of Electroless Co(W,P) Thin Films to Lead-Free SnAgCu Solder
... pattern of bond pads with 200 μm in diameter were then formed on Co(W,P) by the photolithography process using an SU-8 permanent photore- sist (manufactured by MicroChem ...attachment of the ... See full document
7
Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium
... increments of the Schottky barrier height of the 1-nm-thick and the 7-nm-thick TiO 2 contacts are similar, and the Schottky barrier heights of the 7-nm- ... See full document
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Characteristics of n-Type Asymmetric Schottky-Barrier Transistors with Silicided Schottky-Barrier Source and Heavily n-Type Doped Channel and Drain
... operation of operation a novel asymmetric Schottky-barrier transistor (ASSBT) through using technology computer aided design ...silicided Schottky-barrier (SB) source, with the ... See full document
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High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions
... Liu, and Tiao-Yuan Huang, Fellow, IEEE Abstract—A simplified and improved Schottky-barrier metal–oxide–semiconductor device featuring a self-aligned offset channel length, PtSi ... See full document
3
Characteristics of high breakdown voltage Schottky barrier diodes using p(+)-polycrystalline-silicon diffused-guard-ring
... characteristic of the ADP and SAS structures, one can ®nd that the break- down voltage of the ADP structure is slightly greater than that of the SAS structure and the leakage current ... See full document
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The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector
... area, and is the barrier height of the Schottky ...current of the PtSi rp-Si Schottky diode can be obtained from the reverse-biased I ᎐V ...electrical barrier height can ... See full document
5
Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel
... I–V characteristics of the fabricated NiSiGe/n-Si Schottky junction; the NiSiGe formation during MWA conditions was at 200 ˝ C, 330 ˝ C, 390 ˝ C, 420 ˝ C, and 470 ˝ C for 150 s, ...currents ... See full document
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