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[PDF] Top 20 Threshold gain analysis in GaN-based photonic crystal surface emitting lasers

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Threshold gain analysis in GaN-based photonic crystal surface emitting lasers

Threshold gain analysis in GaN-based photonic crystal surface emitting lasers

... lasing threshold by the plane wave expansion method (PWEM) [8 ...the threshold gain at the frequency deviated from the Bragg frequency for square PCs both by using the couple wave theory ...haviors ... See full document

3

Characteristics of GaN-based photonic crystal surface emitting lasers

Characteristics of GaN-based photonic crystal surface emitting lasers

... edges in two-dimensional 共2D兲 PC 共PC兲 structures can create a surface emitting ...PC surface emitting lasers 共PCSELs兲 could be considered as a candidate for perfect single mode ... See full document

4

GaN-based photonic crystal surface emitting lasers with central defects

GaN-based photonic crystal surface emitting lasers with central defects

... interested in GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical ... See full document

4

Design of Low-Threshold Photonic Crystal Surface-Emitting Lasers

Design of Low-Threshold Photonic Crystal Surface-Emitting Lasers

... ONCLUSION In summary, we have investigated the influence of various thicknesses on the inner cladding and optical confinement layers by the transfer matrix method, and also simulated the threshold ... See full document

3

Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers

Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers

... our GaN-based PCSELs, we measured the light emissions from ⌫-K and ⌫-M direc- tions to construct the dispersion diagram by using the ARPL ...The in-plane light wave vector k is related to the polar ... See full document

4

The Lasing Characteristics of GaN-based Two-dimensional Photonic Crystal Surface Emitting Lasers

The Lasing Characteristics of GaN-based Two-dimensional Photonic Crystal Surface Emitting Lasers

... ABSTRACT GaN-based photonic crystal surface-emitting lasers(PCSELs) with AlN/GaN distributed Bragg reflectors were fabricated and ...of GaN-based ... See full document

10

GaSb-based mid infrared photonic crystal surface emitting lasers

GaSb-based mid infrared photonic crystal surface emitting lasers

... GaSb-based surface emitting photonic crystal lasers with a wavelength around ...The threshold power density was ...the photonic crystal had a square lattice ... See full document

7

GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg reflector

GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg reflector

... occurs in the area with PC ...the threshold energy density two order of magnitude ...PC lasers with different lattice constants were plotted, as shown in ...PC lasers have lasing peaks ... See full document

4

Asymmetric design of photonic crystal surface-emitting lasers with low-threshold characteristics

Asymmetric design of photonic crystal surface-emitting lasers with low-threshold characteristics

... Conclusion In conclusion, we have presented the effect of an asymmetric cladding design on the vertical optical confinement by the TMM, and optimized the struc- ture design of a PCSEL to calculate the lowest value ... See full document

5

Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers

Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers

... dependent gain characteristics and linewidth enhancement factor (α-factor) of vertical-cavity surface-emitting lasers with InGaN/GaN multiple quantum wells were studied by measuring the ... See full document

6

Study of GaN-Based Photonic Crystal Surface-Emitting Lasers (PCSELs) With AlN/GaN Distributed Bragg Reflectors

Study of GaN-Based Photonic Crystal Surface-Emitting Lasers (PCSELs) With AlN/GaN Distributed Bragg Reflectors

... PC lasers with different lattice constants occurs at the calculated band edges, showing dif- ferent polarization angles due to the light diffracted in specific directions, corresponding exactly to Γ-, K -, ... See full document

7

Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method

Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method

... positions in some respects, while analyzing cer- tain laser characteristics, each of them suffers limitations in cal- culation of the PCSEL ...of threshold conditions in PCSELs but the ... See full document

7

Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers

Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers

... of threshold behavior was observed at a pumping energy density of E th ¼ 21:5 mJ/cm 2 ...typical GaN edge- emitting semiconductor lasers, 1) indicating the enhancement of the spontaneous ... See full document

6

GaN-based high contrast grating surface-emitting lasers

GaN-based high contrast grating surface-emitting lasers

... interested in GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical ... See full document

5

GaN-based surface-emitting lasers using high contrast grating

GaN-based surface-emitting lasers using high contrast grating

... of GaN-based SELs using HCG are shown in ...coupled-wave analysis (RCWA) to calculate the corresponding asymmetric reflectivity spectra with respect to the different duty cycle (the grating ... See full document

6

Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm

Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm

... either gain guiding by reducing the active size of the device or index guiding by oxide aperture; however, the output power and threshold current are, in part, sacrificed for an intentionally larger ... See full document

3

Effects of Inhomogeneous Gain and Loss on Nitride-Based Vertical-Cavity Surface Emitting Lasers

Effects of Inhomogeneous Gain and Loss on Nitride-Based Vertical-Cavity Surface Emitting Lasers

... of GaN-based VCSEL which usually happens in a region of few micro- meters under optical and electrical ...inhomogeneous gain or lose distribution in the fully structure, causing ... See full document

4

Electrically injected 1.3-mu m quantum-dot photonic-crystal surface-emitting lasers

Electrically injected 1.3-mu m quantum-dot photonic-crystal surface-emitting lasers

... the gain peak of ...0.1. Based on our previous work, the etched PC depth of QD PCSELs is more than two times that of typical QW PCSELs because QD active region is optically confined tightly and peak modal ... See full document

8

Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers

Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers

... degree in electrical engineering and computer science from the National Chiao Tung University, Hsinchu, Taiwan, in ...2004. In 2004, he was a Manager of the Epitaxy Depart- ment, Union Optronics ... See full document

9

Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers

Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers

... vertical-cavity surface-emitting lasers 共VCSELs兲 have attracted much attention due to many advantageous properties over edge-emitting lasers, including circular beam shapes, light ... See full document

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