[PDF] Top 20 Characteristics of novel polysilicon oxide by anodic oxidation
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Characteristics of novel polysilicon oxide by anodic oxidation
... The results show that the anodic polyoxide exhibits considerably excellent characteristics, i.e., low leakage current, high breakdown electric field, and high reliabil[r] ... See full document
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Microstructure and surface characteristics of hydroxyapatite coating on titanium and Ti-30Nb-1Fe-1Hf alloy by anodic oxidation and hydrothermal treatment
... 3.1. Anodic oxidation ...surface of the anode ...formation of an oxide film on the Ti plate, as shown in ...slope of the potential ...marked by the dashed arrow in ... See full document
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Exploration of characteristics in the thin films of Zirconium oxide prepared by anodic oxidation met 蘇家慧、胡永柟、柯鴻禧
... improvement of semiconductor technique, the size of device has been reducing in order to increase the density of integrated circuit device ...one of the techniques is to do shrink by ... See full document
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Effects of anodic oxidation and hydrothermal treatment on surface characteristics and biocompatibility of Ti–30Nb–1Fe–1Hf alloy
... t Anodic oxidation followed by hydrothermal treatment has been widely applied for surface modification of titanium alloys to precipitate a crystalline hydroxyapatite (HA) layer in order to ... See full document
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Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric
... thickness of 100-nm were formed on 4-in thermally oxidized Si wafers by dis- sociating SiH gas at 550 C using ...surface oxide removal, the 40-nm-thick stack gate dielectric (37 nm TEOS/3 nm SiON) ... See full document
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Characteristics of vertical thermal/PECVD polysilicon oxides formed on the sidewall of polysilicon films
... deposited oxide, prepared on conventional planar ...presacrificial oxidation exhibit a higher E bd than do samples without the oxida- ...values of the samples with circular patterns are higher than ... See full document
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A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition
... the novel TFT device are illustrated in ...substrate by low-pressure chemical vapor deposition (LPCVD) at 460 C for 15 min with Si H as the gaseous ...h by furnace anneal and patterned into active ... See full document
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Oxidation characteristics of nanodot and nanobump on TiN thin films by atomic force microscopy
... AFM-induced oxidation on TiN thin films produced TiO x N y oxide structures ...lack of information concerning the surface’s anodic kinetics, growth mechanisms, and the effect of the ... See full document
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High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon film
... profiles of Nitrogen count of the D-TH-O , D-TH-N O, S-T-RT-N O, D-T-RT-N O, and S-T-RT-N O samples, ...trapping characteristics, and for the positive polarity stress, it had a net hole trapping ... See full document
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Performance and reliability of low-temperature polysilicon TFT with a novel stack gate dielectric and stack optimization using PECVD nitrous oxide plasma
... images of poly-Si. Before AFM observation, the oxide film on the poly-Si was removed ...TEOS oxide deposition. The corresponding RMS values of poly-Si surface roughness are ...improvement ... See full document
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IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION
... 2(a) and (b) shows the J-E characteristics of the polyoxides implanted with different doses of fluorine for the positive top-gate bias (electron injection from the bottom- gat[r] ... See full document
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Characterization of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon
... Also, due to the localized thinning effect at the Si/Si02 interface, the TOPS sample exhibits a much higher electron injection efficiency, a significantly lower cha[r] ... See full document
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TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS)
... The TOPS exhibits a higher electron injection efficiency, a better immunity to the electron trapping and the interface state generation under the high-field operation, and [r] ... See full document
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NOVEL TUNNELING DIELECTRIC PREPARED BY OXIDATION OF ULTRATHIN RUGGED POLYSILICON FOR 5-V-ONLY NONVOLATILE MEMORIES
... Because the microtips at the bottom interface are formed after the oxidation of the thin rugged polysilicon, the dielectric proposed in this letter possesses a IOW electr[r] ... See full document
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Size-dependent field-emission characteristics of ZnO nanowires grown by porous anodic aluminum oxide templates assistance
... variations of E to and β are in ...feasibility of pursuing extreme L/D limit while keeping the effective improvement on FE ...process of hydrothermally grown ZnO within the nanochannels of the ... See full document
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THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O
... It was found that the grown polyoxide has very desirable qualities such as a polarity asymmetry of J-E characteristics, which has a lower leakage current but a higher bre[r] ... See full document
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ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESS
... The polyoxide grown on the heavily doped polysilicon film exhibits less oxide tunneling leakage current and higher dielectric strength when the top electrode is positiv[r] ... See full document
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Local anodic oxidation kinetics of chemical vapor deposition graphene supported on a thin oxide buffered silicon template
... tion of CVD SLG supported on thin oxide buffered silicon tem- ...generated by oxidation processes can be much higher than the physical height of carbon–oxygen stacking, and should not ... See full document
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Self-cleaning characteristics on a thin-film surface with nanotube arrays of anodic titanium oxide
... Abstract Self-cleaning of a surface of nanotube arrays of anodic titanium oxide (ATO) is demonstrated. The ATO was prepared in fluoride ion containing sulfate electrolytes with a ... See full document
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Curved polymer nanodiscs by wetting nanopores of anodic aluminum oxide templates with polymer nanospheres
... sizes of the nanospheres inside the nanopores, cross-sectional SEM images in which the AAO templates are still present are taken, as shown in ...prepared by breaking AAO template containing PS ...out ... See full document
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