[PDF] Top 20 Effect of annealing treatment and nanomechanical properties for multilayer Si(0.8)Ge(0.2)-Si films

... The annealing treatment not only leads nucleation seed but also slightly increased the H of the SiGe multilayer ...slip and the orientation of the ba- sal planes plays a key role ... See full document

... the effect of annealing temperature on the Si 0.8 Ge ...The Si 0.8 Ge 0.2 epitaxial layers were deposited by using ultrahigh ... See full document

... structural properties of the SiGe films using the pulsed-laser ...the effect of annealing temperature in thermal treatment to improve the material properties in the ... See full document

... discussed. For comparison, the MIM structure is also pre- ...oxide for- mation before other ...temperature of 400 °C for 2 h to form 5-nm-thick Al 2 O 3 , and finally ... See full document

... because of the lower writing voltage and faster switching speed than those of Flash ...size and device performance, one transistor 共1T兲 ferroelectric metal–oxide–semiconductor ... See full document

... investigations of several different proper- ties of BST thin films, there is still lacking sufficient research systematically correlating the mechanical and structural relationships on a ... See full document

... density of crystalline defects or carrier traps existing in the interface of Si and buffer ...Al 2 O 3 has been considered as the candidate because the Al 2 O 3 is amorphous ... See full document

... effects of annealing time on the structural and optical properties of sputtered ZnO ...RTA treatment, the annealed ZnO films show stronger intensity and narrower FWHM ... See full document

... layers of HfO 2 and La 2 O 3 on In ...Ga 0.47 As for MOS device application. Both multilayer HfO 2 ...nm)/La 2 O 3 (0.8 nm)/In 0.53 Ga ... See full document

... combination of XRD, AFM and nanoindentation techniques has been carried out to investigate the structural, surface morphological features, and nanomechanical properties of GZO ... See full document

... that Ge is easier to be oxidized than nitrified. To investigate the effect of surface nitridation on the following deposited HfO 2 , XPS spectra of Ge 2 p3 and Hf 4 ... See full document

... property of Ge has high electron and hole mobilities and can reach the high performance tar- get in the future Si ...cost and insuf- ficient abundance of Ge in the ... See full document

... J/cm 2 . The energy densities at which Co(Si 1−x Ge x ) transformation to Co(Si 1−x Ge x ) 2 , Ge segregation to the underlying Si, and constitutional ... See full document

... Similarly, it is expected that Ge segregation together with the formation of island structure, which commonly appears in the interfacial reactions of metal/Si, -.,Ge, by conv[r] ... See full document

... laser annealing of Mo/Si 0:76 Ge 0:24 Jian-Shing Luo a , Wen-Tai Lin a,* , ...Department of Materials Science and Engineering, National Cheng Kung University, ... See full document

... Republic of China 共Received 14 June 1999; accepted 22 October 1999兲 Interfacial reactions of Ni/Si ...0.76 Ge 0.24 and Ni/Si 1 ⫺x⫺y Ge x C y by vacuum ... See full document

... Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, ROC Abstract Interfacial reactions of Ni on Si 0:76 Ge 0:24 and Si 1ÿxÿy ... See full document

... function of temperature are shown in Fig. 5. The magnitude of the S-shape features, ...redshift and the blueshift energies, varies with L w ...degree of localization and also to the ... See full document

... The cross-sectional transmission electron microscope reveals that the dense dislocation network is confined to the buffer layer, and relatively few dislocations terminate on the[r] ... See full document

... 共NVM兲 for portable electronic productions is an important industrial semiconductor because of its superiority in low-power consumption, low cost, high- memory capacity, and enough data ...terms ... See full document