[PDF] Top 20 Effect of UV curing time on physical and electrical properties and reliability of low dielectric constant materials
Has 10000 "Effect of UV curing time on physical and electrical properties and reliability of low dielectric constant materials" found on our website. Below are the top 20 most common "Effect of UV curing time on physical and electrical properties and reliability of low dielectric constant materials".
Effect of UV curing time on physical and electrical properties and reliability of low dielectric constant materials
... formation of the Si-O network and the extraction of Si-CH 3 bonds, increasing the dielectric ...with low-k materials with various UV curing ...made. Low-k ... See full document
9
Effect of moisture on electrical properties and reliability of low dielectric constant materials
... Results and discussion Fig. 2(a) presents the FT-IR absorption spectra of porous low-k dielectrics before and after moisture ...treatment, and the intensity of the Si–OH bonds ... See full document
5
Effect of thermal treatment on physical, electrical properties and reliability of porogen-containing and porogen-free ultralow-k dielectrics
... effects of thermal annealing on the physical, electrical properties and reliability of porogen-containing and porogen-free ultralow-k dielectrics prepared by ... See full document
5
Effect of NH3/N-2 ratio in plasma treatment on porous low dielectric constant SiCOH materials
... Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, Taiwan, 54561, Republic of China (Received 6 December 2013; accepted 3 March 2014; published 20 March 2014) This study ... See full document
7
Impact of plasma treatment on structure and electrical properties of porous low dielectric constant SiCOH material
... Low dielectric constant (low-k) porous films are needed for advanced technologies to improve signal propaga- ...integration of porous low-k films faces more severe challenges due ... See full document
4
Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxides
... dimension of the device in integrated circuits 共ICs兲 scales down below 0.18 m, on-chip interconnects become a domi- nant factor in determining the overall IC chip performance, packing density, ... See full document
6
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
... dependence of deposition rate of the low-k films with different carrier gases can be observed in ...a low-pressure region (b400 Pa), the reaction rate is relatively slow, due to insufficient ... See full document
6
Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK
... promise of 30% faster devices with fewer metal levels and a lower cost of produc- tion, attaining high device yields on chips with Cu interconnects remains the greatest challenge, making ... See full document
6
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
... studies on high dielectric constant 共high- 兲 oxides as a possible replacement for con- ventional silicon oxide in complementary metal-oxide- semiconductor 共CMOS兲 devices which require an equivalent ... See full document
4
Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitors
... The dielectric constant and leakage current of the films were also strongly dependent on the postannealing ...deposited on Ir bottom electrode at 500 C, after 700 C annealing ... See full document
10
Physical characterization and electrical properties of sol-gel-derived zirconia films
... ox and K high-k are the dielectric constants of silicon oxide and the high-k dielectric, respectively, and t high-k is the physical thickness of the high-k ... See full document
6
Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides
... indicative of porous or less dense materials like FSG and ...density of nanometer-sized pores, with radii of only about 4-12 Å and total volume fraction of pores around ... See full document
5
Effect of fluorine flow and deposition temperature on physical characteristics and stability of fluorine-doped siloxane-based low-dielectric-constant material
... weak and such bonds are destroyed and decom- posed upon annealing at high temperature, producing a larger degradation in dielectric ...probability of occurrence of such bubble defects ... See full document
7
Effect of UV curing on electrical properties of a UV-Curable co-Polyacrylate/Silica nanocomposite as a transparent encapsulation resin for device packaging
... the electrical property measurements by first coating Al on Si wafer to serve as the bottom ...oligomer and nanocomposite resins were then respectively coated on the Al-coated wafer substrates ... See full document
7
Electrical stability and reliability of ultralow dielectric constant porous carbon-doped oxide film for copper interconnect
... promising low dielectric constant 共low-k兲 intermetal dielectric 共IMD兲 for Cu inter- ...The electrical stability and reliability of CDO strongly depend ... See full document
6
Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane
... increase of the oxygen flow rate in the deposition process induces the increase in reactivity of DEMS, and a higher proportion of plasma-generated species having sufficient bonding energy has ... See full document
6
Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-K dielectric
... integration of the Cu/low-K system, however, a number of issues have to be ...adhesion and avoid Cu out- diffusion through the interlevel ...mm and below, it becomes inappropriate to ... See full document
8
Metal drift induced electrical instability of porous low dielectric constant film
... implementation of copper-interconnect structures with low-k materials is the only solution to reduce overall signal delay in several technology nodes in the ...electric constant ... See full document
6
Effect of Ag on the microstructure and electrical properties of ZnO
... amounts of silver particles, 0.08–7.7 mol%, are mixed with zinc oxide powder and subsequently co-fired at 800–1200 ◦ ...effects of Ag addition on the microstructural evolution and ... See full document
7
Investigation of the electrical properties and reliability of amorphous SiCN
... current of pure silicon carbide (SiC) is much larger than the doped ...process. On the con- trary, a large amount of SiN bonds, which exist randomly in a-SiC films make the structure of a-SiC ... See full document
6
相關主題