[PDF] Top 20 Effects of NH3 plasma passivation on N-channel polycrystalline silicon thin-film transistors
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Effects of NH3 plasma passivation on N-channel polycrystalline silicon thin-film transistors
... characteristics of the n-channel poly-Si TFT’s with various NH -plasma exposure times from 0 to 120 min are shown in ...curves of the devices with a 30 min H -plasma and ... See full document
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THE EFFECTS OF NH3 PLASMA PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS
... These improvements were attributed to not only the hydrogen passivation of the grain-boundary dangling bonds, but also the nitrogen pile-up at SiOz/poly-Si interface [r] ... See full document
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Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallization
... Department of Photonics and Display Institute, National Chiao Tung University, Taiwan d National Nano Device Laboratory, Taiwan This work studied the effects of channel width and NH ... See full document
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Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors
... strain on 共001兲, 共110兲, and 共111兲 grains is theoretically ...accuracy of our theoretical calculation is calibrated with the previous work of the strained-Si field effect transistors, 6,19 and ... See full document
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Dimensional effects on the reliability of polycrystalline silicon thin-film transistors
... In spite of the increase of the threshold voltage, the great increase of acceptor-like trap density after stress enhances the kink effect and then dominates the [r] ... See full document
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Electrical enhancement of polycrystalline silicon thin-film transistors using fluorinated silicate glass passivation layer
... FSG passivation layer to prevent moisture penetration into the FSG film, the degradation of device reliability caused by the absorption of moisture from the atmosphere after device fabrication can be ... See full document
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Channel Film Thickness Effect of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
... impacts of channel film thickness on LTPS-TFTs have been investigated in this ...resistance effects have been observed. Devices with a thicker channel film thickness have ... See full document
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Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH(3) plasma treatment on buffer layer
... plenty of electron-hole pairs are generated in the bottom of poly-Si ...ture of Si material has indirect ...absorption of light would not be directly recombined from band to band due to the ... See full document
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Effects of Channel Width and Nitride Passivation Layer on Electrical Characteristics of Polysilicon Thin-Film Transistors
... dependent on the variation in channel ...function of width. Threshold voltage V th that not only increased passivation of the deep state but also increased passivation of ... See full document
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THE EFFECTS OF FLUORINE PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS
... As compared with the HZ -plasma passivation, the fluorine implantation passivates more uniformly both the band tail-states and midgap deep-state, while the HZ -plasma [r] ... See full document
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O-2-plasma passivation effects on polysilicon thin film transistors using ion plating method
... The characteristics of these novel thin film transistors are superior to those of thin film transistors with plasma-enhanced chemical vapor deposited tetraethylorthosilicate capping oxid[r] ... See full document
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Plasma-induced damage on the performance and reliability of low-temperature polycrystalline silicon thin-film transistors
... 2006. Polycrystalline silicon thin-film transistors 共poly-Si TFTs兲 are key devices in flat-panel displays 共FPDs兲, such as active-matrix liq- uid crystal displays ...mobility of ... See full document
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Passivation-Induced Subthreshold Kink Effect of Ultrathin-Oxide Low-Temperature Polycrystalline Silicon Thin Film Transistors
... the NH 3 plasma ...limiting plasma radical diffusion and results in the plasma radical pileup along the channel ...the channel width keeps decreasing, the corner devices ... See full document
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Reliability of passivated P-type polycrystalline silicon thin film transistors
... It can be seen that after plasma treatment, the turn on current, subthreshold swing, threshold voltage and leakage current (V~,>0 for p-type TFTs) are significantl[r] ... See full document
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Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors
... those of sample ...back channel layer, has less oxygen vacancies in the entire channel layer, thereby lead- ing to a lower free electron density in the bulk of channel ...fraction ... See full document
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Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel
... 共poly-Si兲 thin-film transistors 共TFTs兲 are widely applied in various fields such as active matrix liquid-crystal-displays and three-dimensional electronics 1–3 due to the low temperature and ... See full document
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Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
... Excimer-laser-annealed polycrystalline silicon thin film transistors 共poly-Si TFTs兲 have been extensively investigated due to their potential for integration into peripheral driver ... See full document
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Effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser-crystallized polycrystalline silicon thin film transistors
... the effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser- crystallized polycrystalline silicon TFTs were ...at 3.2 W and ... See full document
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Plasma damage-enhanced negative bias temperature instability in low-temperature polycrystalline silicon thin-film transistors
... by plasma damage in low-temperature polycrystalline silicon thin-film tran- sistors (LTPS TFTs) is ...the thin gate-oxide devices, does exist also in LTPS ...degradation ... See full document
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High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with floating-channel structure
... swing of the FC poly-Si TFT are found to be superior to those of the CN poly-Si ...the silicon dangling bonds originating from the deep trap states have energy states near the middle of the ... See full document
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