[PDF] Top 20 Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films

... indirectly in connection with, in relation to or arising out of the use of the Content. This article may be used for research, teaching, and private study purposes. Any substantial or systematic ... See full document

... publication 3 January 2002兲 In this letter, we present the results of the fabrication and characterization of 5 mol % MgO doped Ba ...0.7 Sr 0.3 TiO 3 共BST兲 ... See full document

... deposition of PSrT thin films. In this work, PSrT films were prepared on a Pt /Ti/SiO 2 /Si substrate at 200 °C using the pulsed-laser deposition 共PLD兲 technique, and then the ... See full document

... Polycrystalline thin ®lms of Ba 0.7 Sr 0.3 TiO 3 (BST) are deposited on SiO 2 /Si substrates by radio frequency magnetron ...the O 2 atmosphere ... See full document

... Al 2 O 3 /Si substrate at 4000 rpm for 30 s and then dried on a hot plate at a tempera- ture of about 350 ...as-deposited films were annealed at different temperatures ... See full document

... e€ects of the O 2 plasma treatment on the electric and dielectric characteristics of Ba 0:7 Sr 0:3 TiO 3 (BST) thin ®lms were ...result ... See full document

... study of the luminescent properties of the rare-earth 共RE兲 doped materials is strongly motivated be- cause of their various applications in optoelectronic devices and next-generation ... See full document

... This article may be used for research, teaching, and private study purposes. Any substantial or systematic reproduction, redistribution, reselling, loan, sub-licensing, systematic supply, or distribution in any ... See full document

... Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan Received 24 February 2006; received in revised form 26 March 2006; accepted 29 March 2006 Abstract ... See full document

... number of electrons injected from the Cu/Ta 2 O 5 interface into the dielectric ®lm is higher than that from the Pt/Ta 2 O 5 ...Ta 2 O 5 ®lm increases with decreased work ... See full document

... interdiffusion of silicon or oxygen across the interface, thus eliminating the formation of an undesirable interfacial ...thermodynamically and electrically compatible with Ta 2 O 5 ... See full document

... structural and optical properties of (Ba, Sr)TiO 3 (BST) films deposited on the transparent substrates at various temperatures of 350–650 ◦ C and ... See full document

... Department of Applied chemistry, National Chiao Tung University, HsinChu 300, Taiwan, ROC Received 7 August 2003; received in revised form 25 September 2003; accepted 20 October 2003 Abstract In this paper, we ... See full document

... SrBi 2 Ta 2 O 9 共SBT兲 is one of the most promising materi- als for application to nonvolatile random access memories due to its excellent ferroelectric properties, characterized by ... See full document

... resistivity of 10  ...Al 2 O 3 , conventional thermal SiO 2 grown on Si of 4 nm was grown in oxygen ambient and annealed at 900 ◦ C for 5 ...perature of 400 ... See full document

... 1þx TiO 3 (PT) thin films were deposited on Al 2 O 3 (10 nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) ... See full document

... micrographs of the films prepared using three different concentration precursor solutions and annealed at 700 ◦ C, showed varied microstructure with change in ...spherical and platy ... See full document

... Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 300, ...Institution of Physics, National Chiao Tung University, Hsinchu, Taiwan 300, ...growth and transport ... See full document

... acetone and alcohol 2 ultrasonic baths, and then blown dry with N ...gas.The 2 solutions were spin-coated onto the substrate at a speed of 3000 ...application of the next ... See full document

... size of the films (Table 1). The SBT films with larger grain sizes exhibit better ferroelectric ...tric properties are governed by the ferroelectric domain structure, domain nucleation, ... See full document