[PDF] Top 20 A new extraction algorithm for the metallurgical channel length of conventional and LDD MOSFET's

... Moreover, the extraction procedure described above needs to accurately determine the threshold voltages for all devices with different channel lengths Similarly, the effect[r] ... See full document

... in the insert of Fig. 6. As pointed out before, the underestimation of is due to the lateral electric field emanating from the source/drain island and the carrier ... See full document

... to channel implantation in MOS devices, Booth et al. [9] had shown that the surface potential at the threshold condition for all the extraction methods is not equal to the ... See full document

... At the phase of device design of MOSFET, the effective channel length is one of the most important ...control the effective channel ... See full document

... equivalent channel is first estimated. The equalizer is then optimized based on the channel ...estimate. Conventional channel estimation algorithms preset a fixed ... See full document

... section, a self-consistent algorithm has been suc- cessfully demonstrated for the extraction of R sd from long- channel to sub-100-nm ...devices. The extracted R sd ... See full document

... MOSFET's with very high accuracy (0.01 pm resolution) [9]. In this paper, a novel charge-pumping method using only one MOSFET device is proposed to determine the metallurgi[r] ... See full document

... shows the deduced AL using the resistance method. Compared to the resistance method, the charge pumping method has a smaller extraction deviation and is self-consistent [r] ... See full document

... DESCRIPTION OF THE NEW METHOD In this section, we will first present the experimental setup of the charge pumping measurement and then propose a new method to determi[r] ... See full document

... accurate and simple small signal model of RF MOSFETs accounting for the distributed gate effect, the substrate parasitics and charge conservation is ...Meanwhile, a direct ... See full document

... XPERIMENTAL A 50-nm-thick a-Si layer was first deposited on a glass substrate and then crystallized by excimer laser annealing with the laser energy density of 420 mJ/cm 2 ... See full document

... In this paper, an analytic saturation model has been de- veloped for conventional and LDD MOS devices by using the pseudo-two-dimensional approximation in the channel and drain r[r] ... See full document

... reduce the dissipation factor is to increase the operation frequency of AC signal, and hence, reduce the dissipation ...meter, and the distribu- tion nature should be ... See full document

... from the State University of New York (SUNY), Stony Brook, in 1970 and 1972, ...During the 1972–1973 academic year, he was a Lecturer in the Department of ... See full document

... In this new method, by combining the power law as a function of stress time and the charge pumping measurement data, we can directly calculate the time-dependent [r] ... See full document

... The determination of drain-and-source series resistance Rds in the lightly doped drain (LDD) MOS device has become an impor- tant issue for modeling its I-V Characteristi[r] ... See full document

... The analytical solution for the two-dimensional Poisson’s equation has been obtained by Green’s function technique with the appropriate boundary conditions in which the cyl[r] ... See full document

... It is known that 2D effects in a short gate-length MESFET can be easily demonstrated by measuring the threshold voltage and the subthreshold current of the fab- rica[r] ... See full document

... are a number of directions along which the developed results in this work can be further ...extend the multi-cell cooperative beamforming design based on the principle of IT to ... See full document

... cramps of uterine origin, is one of the most common gyne- cologic complaints, with prevalence rates ranging between 43% and ...(NSAIDS), and gonadotropin -releasing hormone, have been ... See full document