[PDF] Top 20 Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles
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Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles
... Department of Material Science and Engineering, National Tsing Hua University, Hsin-Chu, Taiwan 300, Republic of China 共Received 8 September 2007; accepted 1 November 2007; published online 27 ... See full document
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Formation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layer
... INTRODUCTION Nonvolatile nanocarbon 共NC兲 memories and poly- silicon-oxide-nitride-oxide-silicon 共SONOS兲-type memories have recently been promising candidates to take the place of the ... See full document
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Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal
... diameter of the nanocrystals is approximately 5 – 6 nm and the area density of the nanocrystals is estimated to be about ...composition of the nanocrystals. To correct the possible charging ... See full document
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Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
... analysis of the reliability indicated the charge retention properties of W nanocrystal nonvolatile memory structure at 25 °C for both the standard sample and those with the O 2 plasma ... See full document
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Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure
... for nonvolatile semiconductor memo- ries is to achieve reliable, low-power, low-voltage ...area of electrically erasable programmable read-only memory 共EEPROM兲 semiconductor devices, there are ... See full document
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Formation of stacked Ni silicide nanocrystals for nonvolatile memory application
... requirements of memory device are the high density cells, low power consumption, high-speed op- eration, and good ...All of the charges stored in a floating gate will leak to the substrate if ... See full document
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Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application
... by formation of a 3-nm tunnel oxide layer which was thermally grown at 1000 °C in a vertical furnace ...amorphous silicon layer and a 3-nm-thick nickel layer were deposited onto the ... See full document
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Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application
... 2 memory was fabricated by co-sputtering in the oxygen environment followed by a low temperature (at 600 °C for 60 s) RTO ...obvious memory window of ...contribution of Ge nanocrystals ... See full document
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Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
... the nickel–silicon–germanium 共NiSiGe兲 mixed film was prepared by cosputtering NiSi 2 and Ge targets on a 6 ...in. silicon wafer with a 5 nm thermal oxide ...NiSiGe and NiSi thin films. ... See full document
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Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer
... Kahng and Sze invented the floating-gate 共FG兲 nonvola- tile semiconductor memory 共or flash memory兲 at Bell ...flash memory device structure continues to be the most prevailing ... See full document
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Formation of iridium nanocrystals with highly thermal stability for the applications of nonvolatile memory device with excellent trapping ability
... characteristics of the pre- sented MIS capacitor stack at two different temperatures are measured by a capacitance time method with applying + / −15 V as prestressing for 10 ...difference of flat-band ... See full document
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Fort-nation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application
... Department of Physics, National Sun Yat-Sen University, Taiwan, Republic of China Available online 17 August 2007 Abstract The formation of stacked nickel-silicide nanocrystals by using ... See full document
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Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
... effects of the metal-oxide-insulator-oxide-silicon 共MOIOS兲 structure with cobalt-silicide NCs embedded in dielectric ...accumulation and in reverse, which exhibited a threshold voltage shift 共⌬V t 兲, ... See full document
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Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidation
... the formation and memory effects of W nanocrystals nonvolatile memory in this ...layer of stacked a-Si and WSi 2 was deposited by low pressure chemical vapor ... See full document
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Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications
... Capacitance–voltage Formation and composition analyses of titanium oxinitride nanocrystals (NCs) fabricated via treating a magnetron co-sputtered thin film of titanium and silicon ... See full document
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Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application
... Kahng and Sze invented the floating-gate 共FG兲 nonvolatile semiconductor memory at Bell ...1 Nonvolatile memory devices with FG structure are being used widely such as mp3 player, ... See full document
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Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
... self-assembling of silicon or germanium nanocrys- tals embedded in SiO 2 layers has been widely studied, and strong memory effects in metal-oxide semiconductor 共MOS兲 devices were ... See full document
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The effect of pulsed laser annealing on the nickel silicide formation
... to silicon interface which is shown in ...melting of nickel silicide, and this melt front propagates down to the silicide and sil- icon ...mixing of silicide and ... See full document
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Annealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memory
... RESULTS AND DISCUSSION A. Devices operation Figures 2 and 3 show the programing and erasing charac- teristics, respectively, with different pulse widths for the HfO 2 SONOS-type flash memories with ... See full document
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CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS
... Low compressive stress of PE-SiN film is easily controlled by adjusting BY power and good UV-transmittance is achieved by decreasing SiH4INH3 gas flow ratio. The[r] ... See full document
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