[PDF] Top 20 The growth and Raman spectra of boron-doped silicon nanowires
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The growth and Raman spectra of boron-doped silicon nanowires
... — Boron-doped silicon nanowires, synthesized under different temperatures and pressures, have been analysed by scanning electron ...microscope. The pressure affects the ... See full document
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Luminescence of selective area growth of epitaxial ZnO nanowires and random-growth-oriented nanobelts
... images of the synthesized ZnO nanostructure in region I (a), region II (b) and region III ...to the sample surface. Micro-Raman spectra were measured in the backscattering ... See full document
5
Chemical vapour deposition growth and Raman characterization of graphene layers and carbon nanotubes
... barrier and 5 nm Ni catalyst film. The latter was activated by plasma treatment at the growth temperature in a predeposition ...step. The Raman spectra were measured on a ... See full document
8
Catalytic Growth of Silicon Nanowires Assisted by Laser Ablation
... When the gas flow reaches steady, a pulsed Nd:YAG laser (Spectra Physics, GCR-190) with 1064 nm wavelength, 30 Hz repetition rate, and ∼70 mJ/pulse was ignited to ablate the target ...sample. ... See full document
7
Evidence for capture of holes into resonant states in boron-doped silicon
... area of 6 ⫻4 mm 2 were made using Al on one surface of the samples, leaving a cen- tral 6 ⫻4 mm 2 window for spectroscopic ...One of the samples was then treated for Ohmic contacts with ... See full document
7
Orientation-enhanced growth and optical properties of ZnO nanowires grown on porous silicon substrates
... rate of 50 ◦ C min −1 and high-purity argon gas was then introduced to the quartz tube at a flow rate that ranged from 120 to 250 ...After the growth process was finished, the ... See full document
6
Characterization of phosphorus-doped and boron-doped diamond-like carbon emitter arrays
... work, the spectral feature is diminished by stron- ger phonon bands attributable to diamond-like carbon 共D band 兲 and crystalline graphite 共G ...that the undoped emitters contain more graphitic ... See full document
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Polarization tuning the Stokes photoluminescence spectra of erbium doped KNbO3 ceramics
... 1, the room temperature micro-Raman spectra with different poling times of erbium doped KNbO 3 ceram- ics were compared with the spectra of unpolarized ... See full document
4
Nucleation control for the growth of vertically aligned GaN nanowires
... with the Ga source at a distance of 20 cm from the substrate was analyzed by CL ...7a, the nanowire was transferred from the native GaN substrate to a blank silicon substrate ... See full document
6
Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions
... as nanowires (NWs), nanorods (NRs), and nanobelts (NBs), have attracted considerable attention because they possess interesting shape- and size-dependent optical and chemical properties ... See full document
3
Structural and optical properties of Al-doped ZnO nanowires synthesized by hydrothermal method
... Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, ROC Available online 18 June 2007 Abstract The growth of ... See full document
4
Retardation in the chemical-mechanical polish of the boron-doped polysilicon and silicon
... ESULTS AND D ISCUSSION Fig. 1 shows the comparison of removal of doped and un- doped poly-Si ...as the total removed thickness in previous runs plus the half ... See full document
3
INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS
... W. ) unless CC License in place (see abstract).. The boron and fluorine distribution pro- files was obtained with a Cameca IMS-4f ion microana- lyzer using O~ primary ion bom[r] ... See full document
7
A New Methodology for Probing the Electrical Properties of Heavily Phosphorous-Doped Polycrystalline Silicon Nanowires
... extract the major electrical properties of in situ phosphorous-doped poly-Si NWs, including the effective active doping con- centration, mobility, and interface fixed charge ...density. ... See full document
7
Preliminary studies of the Raman spectra of Ag2Te and Ag5Te3
... analysis of the Ag 2 Te crystals and the thin films was performed by X-ray powder diffraction in Philips PW1050 diffractometer, equipped with a Cu K α ...determine the exact orientation ... See full document
8
The characterization of boron-doped carbon nanotube arrays
... Doping boron causes the growth rate of CNTs to ...to the high oxygen content contained in the doping source that induces oxidation of ...graphite. The bamboo-like ... See full document
5
Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors
... Institute of Physics. 关DOI: 10.1063/1.1511815兴 In analog and radio frequency circuits, polycrystalline silicon 共poly-Si兲 films are frequently used for resistors, the gate material of ... See full document
4
Growth of silicon nanowires and germanium nanowires via a solid -liquid-solid mechanism 李麗英、李世鴻
... while the GeNWs are straight. Obviously, the morphologies of both nanowires are not exactly the ...kinds of nanowires are surrounded by an amorphous outer oxide shell ... See full document
4
Catalytic syntheses of silicon nanowires and silica nanotubes
... Index Terms - chemical vapor deposition, growth mechanism, laser ablation, pressure efiecf silica nanotuhes, silicon nanowires, vapor-liquid-solid (VLS) growth.. INTRODUCTI[r] ... See full document
3
Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon
... increase the density of nanowires, the carrier gases were adjusted by adding H 2 to increase the gathering of GaN 37 and the flow rate of NH 3 turns down to ... See full document
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