[PDF] Top 20 InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition
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InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition
... are grown on c-plane ...trapped by the high refractive index of GaN as a result of total internal reflection at the interface between the LED and ...dislocation-free InGaN / GaN ... See full document
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Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition
... (RSM) by using X-ray diffraction around the ð1 1 ¯2 0Þ ...a-plane GaN bulk, were ...a-plane GaN bulk were fixed as 30 nm and 900, respec- ...three- by-three square chart. Fig. 1 shows the ... See full document
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Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition
... a-plane GaN thin films on r-plane sapphire using a series of growth con- ditions by metal-organic chemical vapor ...a-plane GaN layer with a very smooth ... See full document
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Effects of growth interruption time on InGaN/GaN quantum dots grown by metal organic chemical vapor deposition - art. no. 612102
... successfully grown self-assembled InGaN QDs structure by metal organic chemical vapor ...quality GaN/sapphire template with a flat surface and the suitable ... See full document
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Study of InGaN multiple quantum dots by metal organic chemical vapor deposition
... of InGaN localization and segregation that have been reported, 10,11) the efficiency and intensity of high indium-content devices at room temper- ature are still quite ...9) InGaN QD density of about 2 10 ... See full document
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Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition
... from 10 to 60 K, the peak showed redshift with respect to photon energy because the 共electron hole pairs兲 carriers, which are randomly distributed in the potential minima at low temperature, do not have sufficient ... See full document
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Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition
... samples with 3 and 6 nm well widths, the emission energy decreased monotonically with increasing temperature. How- ever, for the samples with 9 and 12 nm well widths, the emission energy decreased at temperatures below ... See full document
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Characterization of 380 nm UV-LEDs grown on free-standing GaN by atmospheric-pressure metal-organic chemical vapor deposition
... for InGaN-based UV LEDs on sapphire and FS GaN ...for InGaN-based UV LEDs on sapphire is corresponding with ...LEDs on FS GaN ...LEDs grown on ... See full document
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Recombination Mechanism of InGaN Multiple Quantum Wells Grown by Metalorganic Chemical Vapor Deposition
... of InGaN/GaN multiple quantum wells with different well thicknesses were grown on sapphire by metal organic chemical vapor deposition, and ... See full document
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Influence of free-standing GaN substrate on ultraviolet light-emitting-diodes by atmospheric-pressure metal-organic chemical vapor deposition
... (FS) GaN substrate on ultraviolet light-emitting-diodes (UV LEDs) by atmospheric-pressure metal-organic chemical vapor deposition ...the GaN epitaxial ... See full document
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Metal organic chemical vapor deposition growth of GaN-based light emitting diodes with naturally formed nano pyramids
... The GaN-based LED samples were grown by metal– organic chemical vapor deposition (MOCVD) with a rotating-disc reactor (Emcore D75TM) on a c-axis ... See full document
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Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire
... optical and structural properties. These experiment results provide useful information about fabrication of ZnO thin film materials. 2. Experiment A zinc oxide MOCVD system is designed and built by Structured ... See full document
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Effects of growth temperature on InN/GaN nanodots grown by metal organic chemical vapor deposition
... complicated by the competition between the forward and re- verse reactions, depending on the effective In/N atomic ratio on the ...samples grown at T g ⬎650 °C show some void area 共as ... See full document
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Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
... Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition Z.C. Feng a, *, W. Liu b , ... See full document
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Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition
... the GaN substrate is much brighter than that of the AlInN layer, consistent with the Z-contrast interpret- ation since the average atomic number is greater for GaN than Al-rich ...and GaN with in- ... See full document
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Mechanical properties of InGaN thin films deposited by metal-organic chemical vapor deposition
... of InGaN thin films developed by metal-organic chemical vapor deposition (MOCVD) at various growth ...of deposition temperatures on microstructures and ... See full document
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Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition
... 0) GaN films are grown on r-plane (1 −1 0 2) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high tem- perature AlN buffer ... See full document
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Deep-level emissions in GaAsN/GaAs structures grown by metal organic chemical vapor deposition
... = 0.6% and 1.8%, as indicated by the vertical dashed line. For a GaAsN thickness of 250 Å, the QW confinement effect is negligible and the QW emission energy can be regarded as the GaAsN band gap, regardless of ... See full document
5
InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition
... done by careful growth interruption technique and accurate in situ optical monitoring in low-pressure metal organic chemical vapor ...mm by optical pumping at room temperature ... See full document
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Linear Metal Atom Chain on GaN(0001) by Chemical Vapor Deposition
... and chemical inertness such that the chelate structure of the DPCC molecules remained intact upon their ...Cr chemical states, instead of two predicted based on the Cr chemical structure of ... See full document
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