[PDF] Top 20 The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
Has 10000 "The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors" found on our website. Below are the top 20 most common "The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors".
The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
... temperature of about 244 K by linear fitting the experiment data. The high of our sample within the temperature range could be due to various ...measured the lasing ... See full document
3
The Lasing Characteristics of GaN-based Two-dimensional Photonic Crystal Surface Emitting Lasers
... “The Lasing Characteristics of GaN-Based Vertical-Cavity Surface-Emitting Laser With AlN–GaN and ... See full document
10
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector
... deal of attention due to the large direct band gap and the promising potential for the optoelectronic devices, including light emit- ting diodes and laser ...to the ... See full document
4
Study of GaN-Based Photonic Crystal Surface-Emitting Lasers (PCSELs) With AlN/GaN Distributed Bragg Reflectors
... The lasing wavelength emitted from 2-D PC lasers with different lattice constants occurs at the calculated band edges, showing dif- ferent polarization angles due to the light ... See full document
7
CW lasing of current injection blue GaN-based vertical cavity surface emitting laser
... Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan 共Received 21 February 2008; accepted 20 March 2008; published online 7 April ... See full document
4
Hybrid nitride microcavity using crack-free highly reflective AlN/GaN and Ta2O5/SiO2 distributed Bragg mirrors
... report the growth over 2 inch sapphire substrates of hybrid nitride-based microcavities using one crack-free highly reflective AlN/GaN distributed Bragg ... See full document
5
GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg reflector
... GaAs, and InP material systems that operate at longer wave- ...in the early 1990s due to the large direct band gap and the promising potential for many optoelectronic ...few ... See full document
4
Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector
... years, GaN-based materials have been attracted a lot of attention for applications due to the large direct band gap and the promising potential for the optoelectronic de- ... See full document
4
Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers
... region, and a 10-pair SiO 2 /Ta 2 O 5 dielectric ...DBR. The laser structure has utilized a thin ITO layer of 30 nm as the trans- parent ... See full document
9
Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers
... blue/violet vertical-cavity surface-emitting lasers 共VCSELs兲 have attracted much attention due to many advantageous properties over edge-emitting lasers, including circular beam shapes, ... See full document
4
Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors
... novel GaN-based thin-film vertical injection light-emitting diode (LED) structure with a TiO 2 and SiO 2 omnidirectional reflector (ODR) and an ... See full document
6
Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition
... GaN-based vertical cavity surface emitting lasers 共VCSELs兲 have attracted great interest for various optical ...epitaxial distributed Bragg reflectors ... See full document
4
Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers
... reflective Ta 2 O 5 /SiO 2 as dielectric mirror, and achieved laser operation under optical pumping at ...RT. The optically pumped laser has a ... See full document
11
Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers
... Wang, and C. F. Lin, “Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and ... See full document
6
Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers
... summary, the optical characteristics of a GaN-based VCSEL with two dielectric DBRs were investigated under optical pumping at room ...temperature. The laser emits ... See full document
6
Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection
... Kuo, and Jim Y. Chi Abstract—This investigation explores experimentally the optical characteristics of long-wavelength quantum-dot vertical-cavity surface-emitting ... See full document
3
Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K
... analyzed the fabrication and development of GaN-based VCSELs from optical pumping to electrical ...reflectivity AlN/GaN DBR by insertion of SL layers and ... See full document
11
Characteristics of GaN-based photonic crystal surface emitting lasers
... multidirectional distributed feedback effect near the band edges in two-dimensional 共2D兲 PC 共PC兲 structures can create a surface emitting ...kind of PC surface ... See full document
4
Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector
... Recently, GaN-based materials have been a great deal of attention due to the large direct band gap and the promising potential for the optoelectronic devices, including ... See full document
5
Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers
... composed of period structures by di- electric or metal materials, can provide multidirectional dis- tributed feedback effects near the band edges 1–5 which could be considered as good candidates for ... See full document
4
相關主題