[PDF] Top 20 Low dark current GaN p-i-n photodetectors with a low-temperature AIN interlayer
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Low dark current GaN p-i-n photodetectors with a low-temperature AIN interlayer
... the dark – characteristics of the two GaN p-i-n ...the dark leakage current is signif- icantly low for the PD with LT-AlN ...the dark current ... See full document
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GaN p-i-n photodetectors with an LT-GaN interlayer
... nitride-based p-i-n UV photodetectors with an LT-GaN interlayer were proposed and ...Compared with a conventional GaN p-i-n ... See full document
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High responsivity of GaN p-i-n photodiode by using low-temperature interlayer
... achieved with a lower estimated electric field at around 0.4 MV/ cm 共with 40 V reverse bias across the 1000 nm i layer兲 by the p-i-n structure proposed in this work ... See full document
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High responsivity of GaN p-i-n photodiode by using low-temperature interlayer
... achieved with a lower estimated electric field at around 0.4 MV/ cm 共with 40 V reverse bias across the 1000 nm i layer兲 by the p-i-n structure proposed in this work ... See full document
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GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
... sample A is slower than that of sample B due to the highly resistive LT–GaN layer induced large RC time ...has a large direct band gap energy 共3.41 eV at room temperature 兲 and a high ... See full document
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Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
... samples A and B. Under reverse bias, it was found that the dark current was near a constant of around 1 ⫻10 ⫺10 A for sample ...contrast, dark current of sample B was much ... See full document
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High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes
... leakage current in MSM PDs, we need to enhance the Schottky barrier height at the metal/semiconductor ...achieve a large Schottky barrier height on GaN, one can choose metals with high work ... See full document
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GaN ultraviolet photodetector with a low-temperature AlN cap layer
... 2007. GaN-based materials are useful in short-wavelength emitters such as light-emitting diodes and laser ...共UV兲 photodetectors 共PDs兲. 1,2 For example, GaN-based PDs can be used in space com- ... See full document
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Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate
... 0.8 N/GaN/Al 0.1 Ga 0.9 N double heterostructure on Si with the inserted LT-AlGaN interlayer for breakdown voltage improvement is ...the interlayer can be regarded as the AlGaN ... See full document
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GaN-based ultraviolet p-i-n photodiodes with buried p-layer structure grown by MOVPE
... 2007. GaN-based metal-semiconductor-metal 共MSM兲 photodetectors, 1 p-i-n photodiodes 共PDs兲, 2,3 and Schottky barrier detectors, 4 that op- erate in the UV region, have all been ...in ... See full document
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Low dark current InGaAs(P)/InP p-i-n photodiodes
... For a reversely biased p–i–n photodiode device, it is important to minimize the device dark current and obtain high-speed ...device dark current and obtaining ... See full document
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Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer
... infrared photodetectors 共QWIPs兲 utilizing an intersubband transition have been extensively investigated over the last ...arrays with high ...induced dark current is large and the carrier ... See full document
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GaAs metal-semiconductor-metal photodetectors with low dark current and high responsivity at 850 nm
... MSMPDs with low dark currents and high responsivities at 850 nm have been designed and fabricated ...Using a Schottky contact modified with a 15 nm, 2 × 10 18 cm −3 n + ... See full document
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Low Leakage Current GaN MIS-HEMT with SiNx Gate Insulator using N-2 Plasma Treatment
... effective N 2 plasma treatment for suppressing leakage current in GaN MIS-HEMT has been ...leakage current from the SiN x /GaN ...leakage current mechanisms, we measured the ... See full document
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Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring
... based photodetectors 共PDs兲 are very promis- ing candidates for practical application in the aforementioned areas due to their potentially high quantum efficiency, low noise, and sharp, tunable band ...of ... See full document
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Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes
... study, GaN Schottky barrier diodes 共SBDs兲 were grown by organometallic vapor phase epitaxy ...leakage current by introducing a low-temperature-grown 共LTG兲 GaN layer on top of the ... See full document
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Capacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperatures
... are p-i-n GaAs diodes with part of the intrinsic layer grown at different ...by a Varian Gen-II molecular beam epitaxy (MBE) system on n + -(001) GaAs ...µm n(5 × 10 17 cm ... See full document
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Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN
... for GaN-based UV photodetectors, such as p – i – n photodiodes and Schottky barrier ...Compared with Schottky barrier photodetectors, p – n junction ... See full document
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Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature
... V n 兲, 共3兲 where V n is the energy difference between the Fermi level and the bottom of the conduction band and V bi is the amount of band bending in the ...leakage current in GaN SBDs and the ... See full document
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Effects of high-resistivity, low-temperature layer in transient capacitance measurements of GaAs n-i-p structures
... consistent with each other, partly due to the effect of the high-resistance LT layer, the properties of which are usually affected by growth parame- ters such as growth temperature, beam equivalent ... See full document
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