[PDF] Top 20 High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO
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High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO
... IGZO:Ti film was deposited co-sputtered by IGZO and Ti ...The bilayer metal-oxide TFTs with channel size of 540 μm × 40 μm were measured using a HP4284A precision LCR meter and a ... See full document
3
High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric
... indium–gallium–zinc oxide thin-film transistor with a high-κ-value HfLaO gate ...mV/dec, high mobility of 25 cm 2 /V · s, and large I on /I off ratio of 5 × 10 7 ...for ... See full document
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Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage
... a high-performance thin-film transistor (TFT) fabricated using TiO 2 and InGaZnO semiconducting ...a high field effect mobility of 19 cm 2 /V s at a low drive voltage of <2 V, were ... See full document
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High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors
... achieving high- performance, low power consumption, low cost, and more compact display ...Complementary metal oxide semi- conductor 共CMOS兲 inverter composed of both p-type and n-type thin ... See full document
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Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors
... the mobility as listed in Table 1 ...of mobility by NDD is observed for devices with various channel widths and ...the mobility. The reported mobility overes- timation due to the current ... See full document
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Investigation of LaAlO3/ZrO2/a-InGaZnO thin-film transistors using atmospheric pressure plasma jet
... equivalent oxide thickness of the LaAlO 3 /ZrO 2 dielectric stack decreases from ...a high field-effect mobility of 9 cm 2 ·V −1 ·s −1 and an excellent current ratio of .../a- InGaZnO TFTs with ... See full document
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Charge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistors
... 共TCO兲 thin film transis- tors 共TFTs兲 have attracted great attention because of trans- parence and high carrier-mobility ...zinc oxide 共ZnO兲, is usually polycrystalline in nature and is ... See full document
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Room-temperature flexible thin film transistor with high mobility
... Zinc oxide-based thin film transistors (TFTs) have been studied extensively due to promising application on low-cost large-area ...with high thermal budget for channel activation, the amorphous ... See full document
4
Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature
... carrier mobility, may be further improved by the additional thermal treatment after device fab- ...and high-V GS regime in ...by using the nitrogen annealing at 210 ◦ ... See full document
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An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor
... and small driving current of approximately 10 μA fail to meet the requirements for application in AMOLED displays. To improve device performance, we adopt doped metal–oxide semiconductor of IGZO:Ti ... See full document
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Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors
... nm) film as the gate insulator was grown at 370 ◦ C over the patterned Ti/Al/Ti tri- layer gate ...a-IGZO film was deposited by a dc magnetron sputtering system at room temperature using a target of ... See full document
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High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
... the transistors are turned ...make high performance IGZO-TFTs without metal source and drain ...with metal electrodes ...at high gate and drain ... See full document
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Remarkably high mobility ultrathin-film metal-oxide transistor with strongly overlapped orbitals
... the high mobility of SnO 2 was attributed to the overlapping of s-orbitals, as with ZnO, although it had ns 2 np 2 ...higher mobility than the state-of-the-art ZnO TFTs 32–33 is attributed to the ... See full document
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Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient
... Thin film transistors (TFTs) are widely used as pixel switch in the active-matrix liquid crystal display ...carrier mobility and device uniformity of TFTs are well known to strongly affect the ... See full document
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Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
... of using polycrystalline-Si 共poly-Si兲 thin-film transistors 共TFTs兲 in an active matrix liq- uid crystal display are the greatly improved carrier mobility 共larger than 10 cm 2 / V s兲 in ... See full document
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Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers
... a-IGZO film, N 2 gas with a flow rate of 2 sccm was in situ injected to the deposition chamber without breaking a vacuum to form the a-IGZO:N ...a-IGZO:N film was 10 ...a-IGZO:N film deposited with ... See full document
3
Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors
... at high tem- perature have been ...at high temperature and this phenomenon becomes more serious with the increase of the ...at high temperature. During drain bias stress at high tempera- ture, ... See full document
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Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO3 Gate Dielectric Incorporation
... μ FE = ∂ I d /∂V g · L/(W · V d · C g ), [1] where I d , V d , V g , L, W, and C g are the drain current, drain voltage, gate voltage, channel length, channel width, and gate insulator capacitance per unit area, ... See full document
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Improved performances in low-voltage-driven InGaZnO thin film transistors using a SiO2 buffer layer insertion
... Inserting a SiO 2 buffer layer between IGZO active channel layer and LaAlO 3 gate insulator results in a reduced effec- tive dielectric constant but with significant improved char- acteristics including a high I ... See full document
5
Modification of intrinsic defects in IZO/IGZO thin films for reliable bilayer thin film transistors
... IZO/IGZO thin films for reliable bilayer thin film transistors Nidhi Tiwari, Ram Narayan Chauhan, Po-Tsun Liu* and Han-Ping ...IZO/IGZO thin film transistors as such and with ZnO ... See full document
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