[PDF] Top 20 Oxidation of Ta diffusion barrier layer for Cu metallization in thermal annealing
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Oxidation of Ta diffusion barrier layer for Cu metallization in thermal annealing
... after annealing at 500 ⬚C. Annealing above 600 ⬚C, the Ta barrier was completely replaced by a crystalline Ta ᎐Cu ...addition of Ar gas in low vacuum ... See full document
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Thermal stability of sputtered tungsten carbide as diffusion barrier for copper metallization
... investigation of transition metal nitrides including TaN, TiN, and WN, ...as diffusion barriers for Cu met- allization have been presented in the literature, 5-7 to date little infor- ... See full document
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Characterization of sputtered tantalum carbide barrier layer for copper metallization
... density of patterned Cu/TaC X /p 1 n samples under 400-600 8C annealing for 30 min at N 2 ...8C annealing. However, after 550 and 600 8C annealing, the leakage current density ... See full document
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Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment
... Republic of China 共Received 18 April 2002; accepted 12 August 2002兲 The thermal stability and electrical properties of plasma-treated TaN films have been investigated by Cu/TaN/Si ... See full document
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Characterization of sputtered titanium carbide film as diffusion barrier for copper metallization
... failure of the TiC x film in both the unpatterned and patterned contact structures was ...increase in leakage current of the Cu/TiC x /p ⫹ n-Si structure and based on the fact that no ... See full document
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Novel multilayered Ti/TiN diffusion barrier for Al metallization
... temperature annealing. It is reported that the Ti layer between Al and Si behaves as a sacrificial barrier because it reacts with Al to form TiAl 3 com- pounds at temperatures above ...good ... See full document
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Use of WNX as the diffusion barrier for interconnect copper metallization of InGaP-GaAs HBTs
... Use of WN as the diffusion barrier for the interconnect copper metallization of InGaP–GaAs HBTs is reported for the first ...time. In this paper, InGaP–GaAs HBTs ... See full document
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Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier
... MESFET, metallization, TaN. I. I NTRODUCTION C OPPER metallization has become a hot topic in silicon IC technology ever since IBM announced its success in silicon VLSI processes ...copper ... See full document
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Numerical and experimental analysis of Cu diffusion in plasma-treated tungsten barrier
... 2 for W 共NH 3 ) barriers after annealing at ...sities in range of 10 ⫺7 to 10 ⫺4 are found for Cu/W 共N 2 )/n ⫹ -p and Cu/W 共NH 3 )/n ⫹ -p diodes after annealing at ... See full document
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Thermal stability of Cu/Ta/GaAs multilayers
... Copper metallization on GaAs with Ta as the diffusion barrier layer has been shown to be able to be stable up to 500 ...°C annealing, however, the interfacial mix- ing of ... See full document
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Dependence of Cu/Ta-N/Ta metallization stability on the characteristics of low dielectric constant materials
... Taiwan In this work, stability of the Cu/Ta–N/Ta/low-k material multilayers deposited on Si substrate was ...as-deposited Ta–N diffusion barriers are amorphous TaN x 共x ⬃ ... See full document
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Diffusion barrier properties of sputtered TiB2 between Cu and Si
... the Cu/LPCVD TiB 2 /
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Reliability of multistacked chemical vapor deposited Ti/TiN structure as the diffusion barrier in ultralarge scale integrated metallization
... fast diffusion in TiN films of multistacked structure. In addition, a previous study has shown that the PECVD Ti deposi- tion rate varied with different ...Except for amorphous and ... See full document
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The effect of oxygen in the annealing ambient on interfacial reactions of Cu/Ta/Si multilayers
... effect of Cu diffusion with interfacial behavior of Ta rSi interface on thermal stability, a two-step annealing treatment was carried ...consisted of 400 ⬚Cr30 min ... See full document
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Investigation on multilayered chemical vapor deposited Ti TiN films as the diffusion barriers in Cu and Al metallization
... structure of TiN film was found to be ...a barrier layer, Al and Si would interdiffuse through the grain boundaries of the TiN film after annealing at elevated ...The diffusion ... See full document
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Effects of nitrogen plasma treatment on tantalum diffusion barriers in copper metallization
... that of the sample with Ta or TaN ...formation of tantalum silicide, attributed to formation of a nanostructured amorphous barrier layer to alleviate Cu ...that Cu ... See full document
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Thermal stability of Ti/Pt/Cu Schottky contact on InAlAs layer
... using Cu 3 Ge ...ported. Cu Schottky contact on GaN-based HEMT with low gate leakage current has been ...effect of interdiffusion of the Ti/ Pt/ Au gate on the performance of the GaAs ... See full document
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Barrier capabilities of selective chemical vapor deposited W films and WSiN/WSix/W stacked layers against Cu diffusion
... Department of Submicron Technology Development, ERSO/ITRI, Hsinchu, Taiwan This work investigates the barrier capability of W layers as well as WSiN/WSi x /W stacked layers against Cu ...(CVD) ... See full document
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Reliability of Multistacked Tantalum-based Structure as the Barrier Film in Ultralarge Scale Integrated Metallization
... result in large junction leakage current after annealing at 500 and 525 C, ...Plasma-treated Ta films will improve the integrity of Cu/Ta/n + -p junction diodes to 650 ... See full document
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Effects of thermal N-2 annealing on passivation capability of sputtered Ta(-N) layers against Cu oxidation
... Figure 10 shows the surface morphology for the as-deposited Ta-nitride (or Ta2N)2° layer (Fig. No obvious grain growth of Ta-nitride was observed. This implies the fine grain of the Ta-n[r] ... See full document
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