[PDF] Top 20 Sol-gel derived (Ba0.5Sr0.5)TiO3 thin films and their electrical and dielectric properties

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... the films prepared using three different concentration precursor solutions and annealed at 700 ◦ C, showed varied microstructure with change in ...from 0.08 M solution showed more spherical ... See full document

... related properties, 9 for example, the temperature dependence of the dielectric permittivity is not given by the Curie-Weiss ...of electrical inhomogeneities in the samples suggests extrinsic ...the ... See full document

... the films was characterized by an x-ray diffractometer 共XRD兲 共RU-H3R, Rigaku, ...specimens and to measure the film thickness, and energy dispersive spectroscopy 共EDS兲 was used to identify the ... See full document

... DRAM and the analog/mixed-signal circuit [4], ...the dielectric constant of BST varies with the operating temperature [6]–[9], which affects the precise ...[10], and nanocomposite capacitor shows the ... See full document

... 8) and Ag– 共Ba,Sr兲TiO 3 (BST). 9 The sol-gel- derived Ag–BTO nanocomposite thin films 8 showed a de- crease in dielectric constant due to a ... See full document

... BST thin films have previously been fabricated by differ- ent methods such as metalorganic chemical vapor deposition, molecular beam epitaxy, rf sputtering, thermal evaporation, sol–gel ... See full document

... PZT films is shown in ...PZT films and consequently increase their dielectric con- ...PZT films deposited on BSR 共450°C deposited兲/Ru/SiO 2 /Si ...structure and material ... See full document

... from sol-gel-derived ZrO 2 dielectrics under various anneal- ing ...high-k dielectric material, high-frequency C–V characteristics are important for calculating the equivalent oxide thickness ... See full document

... A dielectric material with a dielectric constant higher than that of thermally grown silicon dioxide 共SiO 2 兲 is required for the sub- 100 nm metal-oxide-semiconductor field-effect transistor 共MOS- FET 兲 to ... See full document

... Cu-2p 3/2 , Fe-2p 3/2 , and O-1s were 932.5 ± ...± 0.2 eV and 530.0 ± ...2 thin films. The chemical composition of CuFeO 2 thin films was close to its stoichi- ... See full document

... unclear, and needs further ...H-state and the L-state and is never switched back to the original- state with the electrical ...supply and the resistance ratio between the H-state ... See full document

... Fang and Shen, the CCTO thin film deposited on Pt/Ti/SiO 2 /Si substrates showed a polycrystalline characteristic and achieved a dielectric constant of near 2000 at 10 kHz and room ... See full document

... publication 3 January 2002兲 In this letter, we present the results of the fabrication and characterization of 5 mol % MgO doped Ba ...0.7 Sr 0.3 TiO 3 ... See full document

... ecules and removal of toxic gases from the ...covalent, and weakly ...Ag(1)–BST, and Ag(2)–BST do not show any splitting or distinct higher energy peak 25 and the com- parable FWHM of O1s ... See full document

... Besides, k'(u) decreases much slower at the frequency above the high-frequency end of each calculated FR1 frequency range. It agrees with the measured results as shown[r] ... See full document

... is 0 ◦ or multiples of 180 ◦ , the error associated with the system becomes ...◦ and 160 ◦ ; beyond this bandwidth, the calibration is replaced by another ... See full document

... Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan Received 24 February 2006; received in revised form 26 March 2006; accepted 29 March 2006 Abstract Mechanical properties ... See full document

... The equivalent circuit, consisting of a series trapping resistance and capacitance combination in parallel with leakage resistance and high frequency limit capacitan[r] ... See full document

... max and k v represent the maximum dielectric constant at zero bias and a certain electric field, ...BSTM films as a function of applied electric field is shown in ...−1 and the ... See full document