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[PDF] Top 20 Structure and thermal stability of MOCVD ZrO2 films on Si (100)

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Structure and thermal stability of MOCVD ZrO2 films on Si (100)

Structure and thermal stability of MOCVD ZrO2 films on Si (100)

... The structure and thermal stability of ZrO 2 films grown on Si (1 0 0) substrates by metalorganic chemical vapor deposition have been studied by ... See full document

7

EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURE

EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURE

... Such a highly fluorinated layer acts as a flu- orine-buffer layer to change the PtSi/Si interface energy (and/or the silicide grain boundary energy) which in turn improve[r] ... See full document

10

Study of thermal stability of nickel monogermanide on single- and polycrystalline germanium substrates

Study of thermal stability of nickel monogermanide on single- and polycrystalline germanium substrates

... amount of renewed interest in Ge sub- strates has occurred recently because of their superior elec- trical properties, especially their higher mobility, when com- pared with their Si ...deposition ... See full document

4

Stability and mechanism of selective etching of ultrathin Ge films on the Si(100) surface upon chlorine adsorption

Stability and mechanism of selective etching of ultrathin Ge films on the Si(100) surface upon chlorine adsorption

... tip and the surface, leading to the larger apparent height shown in the STM ...The Si 2 p spectra in Fig. 2 共c兲 show that the intensity of Si ⫹ increases during 810 K anneal- ing ... See full document

6

Memory effect of RF sputtered ZrO2 thin films

Memory effect of RF sputtered ZrO2 thin films

... properties of RF sputtered ZrO 2 memory thin films were investigated in this ...with structure Al/ZrO 2 /Pt shows a reproducible resistive switching behavior traced over ... See full document

5

Thermal stability of Si/Si1 – x – yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition

Thermal stability of Si/Si1 – x – yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition

... 1,2 and characterization 3–6 of Si 1 2x2y Ge x C y alloys, which offer great flexibility in tailoring the strain and the electronic properties of group IV ... See full document

5

The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

... The thermal stability of a multilayer structure of protection layer/Co 90 Fe 10 /Os (d nm)/Os 20 Mn 80 has been studied as functions of annealing temperature (T an ) and ... See full document

3

Comparison of thermal stability and chemical bonding configurations of plasma oxynitrided Hf and Zr thin films

Comparison of thermal stability and chemical bonding configurations of plasma oxynitrided Hf and Zr thin films

... with ZrO 2 and HfO 2 materi- als for gate-dielectric applications are ...with Si, an in- terlayer 共IL兲 is still generated during the deposition and/or subse- quent post-annealing ... See full document

7

Improvement of light quality by ZrO2 film of chip on glass structure white LED

Improvement of light quality by ZrO2 film of chip on glass structure white LED

... temperature of the COG w-LEDs from 120°C to the 110°C and the ZrO 2 blended phosphor film is more effective than the pure ZrO 2 film in terms of thermal ... See full document

9

Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films

Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films

... Fig. 2 shows the XRD pro files of as-deposited samples and samples subjected to 300 °C/1-h and 350 °C/1-h annealing ...sence of characteristic peaks in diffraction patterns of ... See full document

5

Improvements in both thermal stability of Ni-silicide and electrical reliability of gate oxides using a stacked polysilicon gate structure

Improvements in both thermal stability of Ni-silicide and electrical reliability of gate oxides using a stacked polysilicon gate structure

... Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan A process design is presented for improving the thermal stability of Ni-silicide 共nickel-silicide兲 using ... See full document

4

Characterization and thermal stability of fluorosilicate glass films deposited by high density plasma chemical vapor deposition with different bias power

Characterization and thermal stability of fluorosilicate glass films deposited by high density plasma chemical vapor deposition with different bias power

... first thermal cycle, especially for the film deposited with lower bias power, which resulted from the microstructure change and the evolution of impurities in the FSG ...the films deposited at ... See full document

5

Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO(2)as a gate dielectric

Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO(2)as a gate dielectric

... kinetics of the dielectric films and also their reliability on thin ZnO ...properties of gate dielectrics deposited on thin ZnO ...dielectric films due to their superior ... See full document

8

The effects of plasma treatment on the thermal stability of HfO(2) thin films

The effects of plasma treatment on the thermal stability of HfO(2) thin films

... effects of plasma treatment on the thermal stability of HfO 2 thin films Kow-Ming Chang *, Bwo-Ning Chen, Shih-Ming Huang Department of Electronic Engineering and ... See full document

3

Effects of polyamines on the thermal stability and formation kinetics of DNA duplexes with abnormal structure

Effects of polyamines on the thermal stability and formation kinetics of DNA duplexes with abnormal structure

... Effects of salts and polyamines on the melting temperature of DNA duplexes The T m values of DNA duplexes listed in Figure 1 were deter- mined by recording their A 260 at a different ... See full document

8

Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates

Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates

... effects of annealing time on the structural and optical properties of sputtered ZnO ...intensity and narrower FWHM of the (0 0 2) XRD ...quality of the ZnO ... See full document

5

Dielectric degradation of Cu/SiO2/Si structure during thermal annealing

Dielectric degradation of Cu/SiO2/Si structure during thermal annealing

... Dielectric degradation of the Si02 layer in the metal/SiO,/Si structure after high temperature treatment mostly results from the chemical reaction between metal and Si02 as well as metal[r] ... See full document

5

Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100)

Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100)

... kHz and 100 kHz C–V character- istics and the J – V characteristics of the sample spike an- nealed and annealed in forming gas for 20 ...that of ZrO 2 due to the ... See full document

5

Properties and thermal stability of chemically vapor deposited W-rich WSix thin films

Properties and thermal stability of chemically vapor deposited W-rich WSix thin films

... Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan ~Received 27 February 1998; accepted 18 December 1998! The tungsten-rich ~Si/W atomic ratio less than ...properties ... See full document

8

Effect of Co/Sn doping on the thermal stability of magneticproperties of Ba-ferrite thin films

Effect of Co/Sn doping on the thermal stability of magneticproperties of Ba-ferrite thin films

... The effects of Co/Sn contents and annealing temperature on the perpendicular and in-plane magnetic properties of the Co/Sn doped BaM thin films were also examined[r] ... See full document

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