[PDF] Top 20 Temperature-dependent study of n-ZnO/p-GaN diodes
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Temperature-dependent study of n-ZnO/p-GaN diodes
... the temperature dependence of the current-voltage 共I-V兲 characteristics of n-ZnO / p-GaN junction ...The n-ZnO films were deposited on top of the ... See full document
3
Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO/SiO2 thin films on top of the p-GaN heterostructure
... wavelengths of ZnO hetero- structure LEDs have been presented, ranging from UV emis- sion at 375– 389 nm to wideband spectra 共violet-white to ...growth of n-ZnO : Ga by chemical vapor ... See full document
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Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition
... quality of our nanorod LEDs. Figure 3(a) shows the room temperature normalized PL spectra of p-GaN nanorod arrays with (blue line) and without (black line) slanted ZnO film grown ... See full document
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Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer
... from ZnO nanowire light-emitting arrays is ...between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was ...the temperature is decreased, contrary to the ... See full document
3
Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure
... light-emitting diodes with large overlap quantum wells,” ...and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth ... See full document
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Temperature-Dependent Electroluminescence Efficiency in Blue InGaN-GaN Light-Emitting Diodes With Different Well Widths
... EQE of the blue InGaN LEDs with different well widths as a function of input current at temperature between 80 K and 300 ...low temperature and electrons seriously overflow into the ... See full document
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The Study of Junction Temperature of High Power GaN Light Emitting Diodes 黃文祥、廖豐標
... one of the photo-electronic devices for P-N semiconductor materials of ...applications of the back-lighting systems and solid-state ...the temperature of active region ... See full document
2
Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN
... and GaN 兲 can reveal themselves in high leakage ...origins of trap levels and hence leakage cur- ...as temperature-dependent electri- cal characterization, are needed to clarify the charged ... See full document
3
Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes
... Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China 共Received 30 August 2004; accepted 17 December 2004; ... See full document
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Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature
... on n-type GaN are very thermally stable. In this study, WSi ...on GaN films 共samples A and B兲 followed by high-temperature thermal annealing, to study the thermal ...on ... See full document
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Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction
... suitability of the studied diode to prac- tical LED applications, a preliminary stability study of EL performance was ...intensities of the device working under reverse bias of 40 ... See full document
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Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer
... development of high-efficiency InGaN light- emitting diodes 共LEDs兲 is considered one of the most impor- tant topics in the area of solid-state ...efficiency of LEDs is limited by ... See full document
3
Thermal stability study of Ni/Ta n-GaN Schottky contacts
... Ni/Ta n-GaN Schottky diodes after annealing at various high tem- peratures for 5 ...annealing temperature, rather than the tendency to shift to the left in the Ni-only ...temperatures ... See full document
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Planar GaN p-i-n photodiodes with n(+)-conductive channel formed by Si implantation
... and GaN兲 can reveal themselves in high leakage ...origins of trap levels and hence appearance of leakage ...as temperature-dependent electrical characterization, is needed to clarify ... See full document
3
Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers
... Introduction GaN-based blue/violet vertical cavity surface-emitting lasers (VCSELs) have attracted much attention due to many advantageous properties over edge emitting lasers, including circular beam shapes, ... See full document
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Slanted n-ZnO nanorod arrays/p-GaN light-emitting diodes with strong ultraviolet emissions
... properties of fabricated LEDs. The normalized PL spectra of planar and slanted ZnO/p-GaN heterostructures are plotted in ...spectrum of p-GaN without ZnO ... See full document
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High responsivity of GaN p-i-n photodiode by using low-temperature interlayer
... structures of this work were all grown on c-plane 共0 0 0 1兲 sapphire substrates by a low-pressure met- alorganic chemical vapor deposition ...materials of Ga, Al, and N, ...the n-type and ... See full document
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High responsivity of GaN p-i-n photodiode by using low-temperature interlayer
... structures of this work were all grown on c-plane 共0 0 0 1兲 sapphire substrates by a low-pressure met- alorganic chemical vapor deposition ...materials of Ga, Al, and N, ...the n-type and ... See full document
3
Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
... tensity of this trap is much higher for the 89-P than for the 90-N sample as shown in ...the p-region and has stronger hole confinement. Since samples 89-P and 90-N were grown at ... See full document
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Low dark current GaN p-i-n photodetectors with a low-temperature AIN interlayer
... characteristics of the two GaN p-i-n ...current of the PD with LT-AlN interlayer was – ...current of the conventional PD was much larger and increased rapidly with increasing ... See full document
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