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[PDF] Top 20 Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors

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Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors

Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors

... the impact ionization is inversely proportional to the band gap value, the narrow band gap of InGaAs channel makes it susceptible to induce the impact ionization ...voltage, high gate ... See full document

3

Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors

Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors

... the temperature is increased from 300 to 480 K. The corresponding temperature coefficients, ...role in device ...pinning effect is substantially suppressed and the dependence of Schottky ... See full document

5

Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors

Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors

... effects in InAlAs/ InGaAs/ GaAs metamorphic high-electron-mobility transistors have been ...Improvements on the kink effect have been observed by using the higher ... See full document

3

Simulation and analysis of metamorphic high electron mobility transistors

Simulation and analysis of metamorphic high electron mobility transistors

... absolute temperature (in K). Under high electrical fields, the effect on the mobility caused by the electric field is more than that by the Coulomb force between ...carrier ... See full document

4

Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology

Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology

... ð4Þ In the above equations, elements with superscript ‘‘C’’ are related to the CPW transmission line on GaAs chip while those with superscript ‘‘T’’ are related to the overall struc- ...outlined in ... See full document

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High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor

High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor

... InP-based high electron mobility transistors 共HEMTs兲 have shown the distinguished high-frequency characteristics, noise figures, and efficiencies for the power amplification ... See full document

3

Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate

Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate

... of high-frequency wireless communication demands high-performance packaging structures at low ...parasitic effect and high performance at high frequencies. In this study, the ... See full document

6

Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)

Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)

... the metamorphic growth gives a free choice of lattice constant and indium composition in the InGaAs ...for high-power and low-noise ...Schottky characteristics and to suppress the substrate ... See full document

7

Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching

Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching

... IV characteristics in ...R ON , and high g m , which are necessary for ultralow-power and high- frequency ...a high current density and g m value result from the high peak ... See full document

4

Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor

Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor

... improvements in growth techniques, hetero- structure field-effect transistors 共HFETs兲 have been studied exten- sively for high-speed microwave ...a high density of interface ...the ... See full document

4

Characteristics of delta-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel

Characteristics of delta-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel

... concentration. In addition, it is because the high resistivity and the wide-gap InAlAs buffer layer significantly suppress the buffer leakages that good pinch-off characteristics have been achieved ... See full document

8

Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors

Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors

... field-effect transistors (HFETs) operated at high power and high temperature is widely ...at high-power and high temperatures can be improved by reducing gate leakage ... See full document

3

Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

... the application of the field plate will result in soft gain compression and thus better IMD3 performance as observed from the measurement. To further characterize the device performance under digitally modulated ... See full document

5

Hydrogen sensing properties of a metamorphic high electron mobility transistor

Hydrogen sensing properties of a metamorphic high electron mobility transistor

... progress in epitaxial technology, more complicated device structures can be ...achieved. Electron devices, for instance, the light emitting diode and high electron mobility transistor ... See full document

3

High performance non-alloyed pseudomorphic high electron mobility transistors

High performance non-alloyed pseudomorphic high electron mobility transistors

... and well defined edges of the non-alloyed contact pads indicate that the limit of using AuGeNi metal in small dimension devices, due to interface interaction dur[r] ... See full document

5

Novel packaging design for high-power GaN-on-Si high electron mobility transistors (HEMTs)

Novel packaging design for high-power GaN-on-Si high electron mobility transistors (HEMTs)

... fabricated on an Si substrate, packaged in a V-grooved copper base and mounted on a TO-3P lead ...proposed high- power package include a V-shaped grooved platform that provides an additional ... See full document

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An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

... grown on Si substrates contain very high numbers of TDs and produce defects because of the high lattice ...traps on the GaN surface or in the buffer ...reduction in BV, and CC, ... See full document

11

High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

... AlGaN/GaN high electron mobility transistors 共HEMTs兲 with zinc oxide 共ZnO兲 nanowires modified gate exhibit significant changes in channel conductance upon expose to different ... See full document

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Crystallized Ohmic Contact Effect in AlGaN/GaN High Electron Mobility Transistor

Crystallized Ohmic Contact Effect in AlGaN/GaN High Electron Mobility Transistor

... 2013 In this study, we investigate the grain size effect of high electron mobility transistor devices with ohmic contact metals of stacked Ti/Al/Ni/Au and ...Ti/Al/Mo/Au. In ... See full document

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Structure design criteria of dual-channel high mobility electron transistors

Structure design criteria of dual-channel high mobility electron transistors

... concentration on the top d-doped layer affects the G m ...reduced in DHEMT structure because of the effective double block from electron tunneling by the design of dual-channel (dual barrier) ... See full document

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