[PDF] Top 20 Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

... influence of top electrode material on the resistive switching properties of MnO 2 -based memory film using Pt as a bottom electrode was ... See full document

... influence of top electrode material on the resis- tive switching properties of ZrO 2 -based memory film using Pt as a bottom electrode was ... See full document

... the electrode material with larger work ...the electrode with the larger work function induces the resistive switching in CCTO, it also causes a decrease in the current ... See full document

... Conclusions In summary, the influence of Al and Ni electrodes in resistive switching characteristics of Al/Yb 2 O 3 /TaN and Ni/Yb 2 O 3 /TaN mem- ory ... See full document

... the top electrode formed an Ohmic contact with NiO film, the effective elec- tric field inside the film became high enough to cause the resistive ...switching. On the contrary, if ... See full document

... bottom electrode (BE) while the Pt top electrode (TE) was ...discussion In order to ascertain the switching mechanism, HRTEM was performed to analyze this ...shown in Fig. 1(a), ... See full document

... resistance switching is related to the redox reaction near the anode –electrode/oxide interface, which can be also de fined as the switching layer (SL) ...size effect of the PBT and PBGT ... See full document

... years, resistive random access memory (RRAM) has attracted a great deal of attention from ...composed of a metal–insulator– metal (MIM) structure is being considered as a potential candidate ... See full document

... properties of the electrode materials, variations in ITO thin film properties may cause different switching characteristics in ...RRAMs. In this paper, the electrical ... See full document

... formation of oxygen vacancies as the Ga /Zn molar ratios in the nanorods ...results of PL studies. The mobility of defects at the surface of the film is substantially higher than that ... See full document

... Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan b Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan c Institute of Electronics, National Chiao Tung ... See full document

... Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan b Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan c Department of Electronics Engineering, ... See full document

... semiconductor nonvolatile memories 共NVMs兲 are shared constantly to achieve the large ...access memory 共ReRAM兲, have been widely ...one of the attractive materials to produce ReRAMs be- cause ... See full document

... Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO 2 thin films Chun-Hung Lai a, ⁎ , Chih-Yi Liu b , Cheng-Hsing Hsu c , Yi-Mu Lee a ... See full document

... Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications Yang-Shun Fan, Po-Tsun Liu, a) Li-Feng Teng, and Ching-Hui Hsu ... See full document

... advantages of long data retention, high-speed operation, thermal robustness, high scalability, and simple structure compatible with the standard comple- mentary metal–oxide–semiconductor (CMOS) ...variations ... See full document

... phenomena in several binary metal oxides have been known from decades, the details of the switching mechanisms and the nature of the different resistive states are still under ...nant ... See full document

... trend of nonvolatile memory (NVM) toward high density, fast speed and low power consumption, the conventional flash memory [1–3] has approached technical and physical ...based resistive ... See full document

... SiO 2 , some annealing processes can induce defects or traps in the SiO 2 film around metal ...deficiency in the surrounding SiO 2 results in stored charges leaking out of ... See full document

... Abstract In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different ... See full document