[PDF] Top 20 High-performance nanowire TFTs with metal-induced lateral crystallized poly-Si channels
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High-performance nanowire TFTs with metal-induced lateral crystallized poly-Si channels
... 2008 High-Performance Nanowire TFTs With Metal-Induced Lateral Crystallized Poly-Si Channels Chia-Wen Chang, Student Member, IEEE, ... See full document
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High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization
... MILC poly-Si TFTs with NW channels are compared in ...NW channels formed by MILC are suitable for high-performance device ... See full document
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High performance poly-Si TFTs fabricated by continuous-wave laser annealing of metal-induced lateral crystallised silicon films
... began with 4-inch quartz wafer sub- strates where wet oxide films of 500 nm were ...layer with a thickness of 100 nm was deposited using low-pressure chemical vapour deposition ... See full document
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High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates
... He has made a great deal of pioneering contributions to low-permittivity (low-k) dielectrics, copper inter- connects, and thin-film-transistor technologies. In his research on low-k dielectrics, he utilized a plasma ... See full document
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Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels
... higher lateral field because its gate control was more robust than that of the G1S1 [9], [10] Ni-MILC poly-Si ...(G2M10) with the same ten nanowire channels Ni-MILC ... See full document
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Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels
... associated with the fabri- cated devices with SPC poly-Si channel is the magnitude of the drive current, since the carrier mobility is seriously degraded by the granular ...device with ... See full document
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Novel gate-all-around poly-Si TFTs with multiple nanowire channels
... (GAA) poly-Si thin-film transistors (TFTs) with multiple nanowire channels (MNCs) have been, for the first time, fabricated using a simple process to demonstrate ... See full document
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Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering
... nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film ...the performance of NILC ... See full document
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Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
... the poly-Si film, the capacity to integrate the pixel switching elements, and the capacity to integrate the panel array and the peripheral driving circuit on the same ...make high-performance ... See full document
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Improved Electrical Performance and Uniformity of MILC Poly-Si TFTs Manufactured Using Drive-In Nickel-Induced Lateral Crystallization
... nickel- induced lateral crystallization (DILC) was ...DILC TFTs exhibit high field-effect mobility, low threshold voltage, low sub- threshold slope, high ON -state current, lower ... See full document
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Thickness dependence of microstructure of laterally crystallized poly-Si thin films and electrical characteristics of low-temperature poly-Si TFTs
... Low-temperature poly-Si 共LTPS兲 thin-film transistors 共TFTs兲 have received much attention in recent years because of their in- creasing use in active matrix displays, such as active matrix liquid ... See full document
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High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO2 gate stack structure
... letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral- crystallization (MILC) channel layer and TaN/HfO 2 gate ... See full document
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High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure
... implantation with dose of cm was carried out to form source and drain ...Finally, TFTs were passivated by 4-h NH plasma treatment to further improve device perfor- ...LTPS TFTs with a ... See full document
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A simple Spacer technique to fabricate poly-Si TFTs with 50-nm nanowire channels
... the poly-Si TFTs with NW chan- nels in this ...proposed poly-Si NW TFT has excellent gate controllability due to the trigatelike structure with the sidewall and corner ... See full document
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Improved uniformity and electrical performance of continuous-wave laser-crystallized TFTs using metal-induced laterally crystallized si film
... of TFTs in the random grain structure for W = L = 20 lm at V DS = 5 V and V DS = ...electrical performance of ...Both Si films had very large directional ... See full document
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Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels
... GAA-SCLNC TFTs with two NWs in the channels due to their different grain orientations and intragrain defect distribution among ...cooling, lateral solidification commences from the ... See full document
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High-performance poly-Si nanowire NMOS transistors
... NW channels were simultaneously formed on the sidewalls of the gate structure, similar to the formation of sidewall spacers used in standard CMOS ...manner with respect to the S/D and remained undoped ... See full document
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CF4 plasma treatment for fabricating high-performance and reliable solid-phase-crystallized poly-Si TFTs
... 共Poly-Si TFTs兲 have attracted much attention due to the possibility to realize the integra- tion of switching pixels and their peripheral driver circuits on a single glass substrate of active matrix ... See full document
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High-performance RSD poly-Si TFTs with a new ONO gate dielectric
... RSD poly-Si TFT device with ONO stack gate ...doped poly-Si and poly RSD is their in- dependence of the original poly-Si layer, which makes it more flexible in the ... See full document
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High-Performance Poly-Si Thin-Film Transistors With L-Fin Channels
... + poly-Si gate with a thickness of 250 nm were then deposited ...implanted with arsenic (As + ; 25 keV at 5 × 10 15 cm −2 ) and activated at 600 ◦ C in a N 2 ...LFin-TFTs with Ni ... See full document
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