[PDF] Top 20 High-performance poly-silicon TFTs using HfO2 gate dielectric
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High-performance poly-silicon TFTs using HfO2 gate dielectric
... of poly-Si TFTs with HfO 2 (T physical = ...SiO 2 (T physical = 25 or 45 nm) at V ds = ...The gate-leakage current density of HfO 2 TFTs is about 1 µA/cm ... See full document
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High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric
... a high- LaAlO 3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors ...TFT performance was achieved—such as a high drive cur- rent, low threshold voltage and ... See full document
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High-performance RSD poly-Si TFTs with a new ONO gate dielectric
... RSD poly-Si TFT device with ONO stack gate ...doped poly-Si and poly RSD is their in- dependence of the original poly-Si layer, which makes it more flexible in the process ...form ... See full document
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High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate dielectric
... N 2 ambient to induce the recrystallization of amorphous ...ferent gate dielectrics, all of which were 60 nm in thickness, were ...both HfO 2 and HfSiO x films were deposited by atomic vapor ... See full document
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Characteristics of HfO(2)/Poly-Si Interfacial Layer on CMOS LTPS-TFTs With HfO(2) Gate Dielectric and O(2) Plasma Surface Treatment
... SiO 2 gate dielectric is replaced by HfO 2 ...Larger gate capacitance density, which is achieved by replacing the SiO 2 gate dielectric by HfO ... See full document
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CF4-plasma-induced fluorine passivation effects on poly-Si TFTs with high-kappa Pr2O3 gate dielectric
... Polycrystalline silicon thin-film transistors 共poly-Si TFTs兲 have received considerable attention in fields such as large-area electronic applications including linear image sensors and active-matrix ... See full document
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High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatment
... extrinsic gate dielectrics, including Ta 2 O 5 , Y 2 O 3 , ZrO 2 , CeO 2 , SrTiO 3 , BaSrTiO 3 共BST兲, and HfO 2 have been extensively ...these high-k gate ... See full document
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High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO2 gate stack structure
... letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral- crystallization (MILC) channel layer and TaN/HfO 2 gate stack is ... See full document
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High-performance polycrystalline silicon thin-film transistors with oxidenitride-oxide gate dielectric and multiple nanowire channels
... a high performance TFT with a nanowire structure and multilayer ONO gate ...ONO gate dielectric has better electrical properties compared to the standard TFT with a TEOS oxide ...better ... See full document
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High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure
... and gate polycrystalline silicon thin- film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel ...conventional TFTs. The FSA-TFTs exhibit small S/D and ... See full document
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High performance poly-Si TFTs fabricated by continuous-wave laser annealing of metal-induced lateral crystallised silicon films
... Experiment: The MILC process began with 4-inch quartz wafer sub- strates where wet oxide films of 500 nm were grown. A silane-based undoped amorphous silicon ( a -Si) layer with a thickness of 100 nm was deposited ... See full document
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Electrical properties of low-temperature-compatible p-channel polycrystalline-silicon TFTs using high-kappa gate dielectrics
... the TFTs containing the high-κ dielectrics were relatively insensitive to high temperature, whereas the deterioration of the deposited- SiO 2 TFT was ...for TFTs to be fabricated on ... See full document
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Improved Electrical Performance of NILC Poly-Si TFTs Manufactured Using H2SO4 and HCl Solution
... polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have attracted considerable interest for their application in active-matrix liquid crystal displays (AMLCDs) ...amorphous silicon ... See full document
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High-performance poly-Si TFTs fabricated by implant-to-silicide technique
... layer dielectric deposition, contact hole patterning, and Al metallization completed the fabrication ...CN TFTs implanted after gate patterning; then, activated at temperatures of 600 C for 24 h ... See full document
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Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering
... polycrystalline silicon is an issue to fabricate high performance nanowire thin film ...-Si/chem-SiO 2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the ... See full document
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Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation
... of gate capacitance is one effective way to improve the performance of ...large gate capacitance can attract more carriers with a smaller voltage to make the LTPS-TFTs turn ...higher ... See full document
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Fabrication of High Electrical Performance NILC-TFTs Using FSG Buffer Layer
... polycrystalline silicon thin- film transistors (poly-Si ...possess high immunity against the hot-carrier stress and, thereby, exhibit better ... See full document
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High-performance self-aligned bottom-gate low-temperature poly-silicon thin-film transistors with excimer laser crystallization
... LTPS TFTs with lateral grain growth and the non-SA BG ...by using the I-line stepper ...SA TFTs and conventional non- SA ones are almost the same, except the lithography process of defining the ... See full document
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High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization
... Fig. 2b shows the schematic illustration of lateral grain growth mechanism using plateau structure of a-Si thin film with excimer laser ...DG TFTs and only one grain boundary perpendicular to the ... See full document
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Impacts of N-2 and NH3 Plasma Surface Treatments on High-Performance LTPS-TFT With High-kappa Gate Dielectric
... with HfO 2 gate dielectric after N 2 and NH 3 plasma surface treatments, res- ...N 2 and NH 3 plasma surface treatments can also reduce surface roughness scattering to enhance ... See full document
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