[PDF] Top 20 Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure
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Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure
... the ITO–p-GaN interface after thermal ...between ITO and p-GaN. In order to improve the contact characteristics, some authors added an interfacial layer such as Ni or NiO ... See full document
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Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design
... made in the same ...of ITO in the range of ...output light intensity) between cases: while the sample A shows best normalized light output, the sample D is also comparable in ... See full document
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Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching
... The GaN-based thin-film vertical-injection LEDs (VLEDs) with GaN nano-cone structures are fabricated and ...the GaN nano-cone structures are self-assembly formed with variable density of ... See full document
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GaN-based microcavity polariton light emitting diodes
... driven in electrical way at ...demonstrated in organic semiconductors and a GaAs/AlGaAs quantum cascade structure previously [10, ...demonstrated in commonly used GaAs based multiple ... See full document
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Metal organic chemical vapor deposition growth of GaN-based light emitting diodes with naturally formed nano pyramids
... The GaN-based LED samples were grown by metal– organic chemical vapor deposition (MOCVD) with a rotating-disc reactor (Emcore D75TM) on a c-axis sapphire (0001) ...the p- and n-type ... See full document
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Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions
... substrates by MOCVD. A 20-nm-thick low temperature GaN nucleation layer followed by a 4 μm n-type GaN buffer layer, ten-pair InGaN/GaN superlattice were grown on the top of ...of ... See full document
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Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer
... 2007兲 GaN-based light-emitting diodes 共LEDs兲 with indium tin oxide 共ITO兲/Ga-doped ZnO 共GZO兲 composite oxide films serving as a transparent contact layer 共TCL兲 were ... See full document
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Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes
... 2010 GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a double 12-fold photonic quasi-crystal (PQC) structure formed using nanoimprint lithography ... See full document
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A novel randomly textured phosphor structure for highly efficient white light-emitting diodes
... process In this experiment, we use the same blue LED chips and the same amount of phosphor mixed with silicone encapsulant for LEDs I, II, and ...phor structure in LED III. The process flow charts ... See full document
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GaN-based high-Q vertical-cavity light-emitting diodes
... The ITO was employed as a p-type ohmic contact material and annealed at 525 ◦ C for 10 min under a nitrogen ambient to reduce the contact resistance and to increase ...patterned by a lift-off ... See full document
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Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure
... the light field intensity, A 0 is the amplitude, b is the slit width, and d is the separation of the ...pillar structure, parameters b and d directly correspond to the spac- ing and the pitch of ... See full document
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High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping structure
... brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping structure View the table of contents for this issue, or go to the journal ... See full document
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Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching
... fabricated In 0.3 Ga 0.7 N/GaN green emission nanorods and demonstrated optical enhancement by photoluminescence (PL) ...nanorods structure in comparison to ... See full document
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Highly efficient p-i-n white organic light emitting devices with tandem structure
... Figure 1 shows the transmittance of BPhen: 2% Cs 2 CO 3 共20 nm兲/NPB: 50% v/v WO 3 共70 nm兲 bilayer thin film and the connecting layer is transparent in the visible region from 420 to 750 nm, which is ... See full document
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Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition
... Xie, 1 Yi-Lun Chuang, 1 Tai-Yuan Lin, 4, b and Jinn-Kong Sheu 5,c 1 Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, ... See full document
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High brightness GaN-based light-emitting diodes
... cated by a chemical wet etching ...the light extraction ...observed by adopting this scheme. In the second part of this article, we present a LED structure adopting double ... See full document
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Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching
... nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface ...controlled by inductively coupled plasma reactive ion ... See full document
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Efficiency droop improvement in GaN-based light-emitting diodes by graded-composition electron blocking layer
... grown by metal-organic chemical vapor deposition exhibited better electrical characteristics, and much higher output power at high current density, as compared to conventional ...34% in conventional LED to ... See full document
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Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods
... analysis in high indium composition (x > 20%) InGaN/GaN MQWs [2, ...screening by free carriers occupying delocalized states ...confined in quantum-dot-like regions or localization ... See full document
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Enhancement Performance of GaN-based Light-emitting Diodes by Modified Patterned Sapphire Surface
... b Sino-American Silicon Products Inc., Hsinchu, Taiwan, R.O.C The PSSs were fabricated by wet etching. Compared with the platform-PSS, the modified-PSS was still capped with a layer on the top platform after wet ... See full document
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