[PDF] Top 20 Improved InAlGaP-based heterostructure field-effect transistors
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Improved InAlGaP-based heterostructure field-effect transistors
... investigated because it has a high Schottky barrier, a large high band gap and a large conduction-band discontinuity (E C ). Even without indium in the channel of the InAlGaP / GaAs HFET, g m and I max are as ... See full document
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In0.34Al0.66As0.85Sb0.15/delta(n(+))-InP heterostructure field-effect transistors
... modulation-doped field transistors 共MODFETs兲 have attracted much attention in microwave and optoelectronic applications, but the parallel conduction in the doped high band gap material may degrade the gate ... See full document
3
Comparison of Al0.32Ga0.68N/GaN heterostructure field-effect transistors with different channel thicknesses
... electric field significantly in- creases the sheet carrier ...N/GaN heterostructure grown on sapphire substrates exhibited less 2-DEG mobility than those grown on SiC substrates because of ... See full document
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InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
... One of the most effective ways [2, 4, 7, 8] to solve the problem men- tioned above is to add a barrier beside the channel to block the hole injection into the buffer layer. However, to fabricate a type-I heterostruc- ... See full document
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Study of Thin-Film Field-Effect Transistors Based on Sr-Doped Lanthanum Titanate Heterostructure 黃俊瑋、宋皇輝
... metal-insulator transition in the channel induced by the gate voltage. The on-off ratio of Id is about 4 for Vg of 0 and -300 mV at Vds of 0.4 V. The typical transconductance of the transistor is 5.5 μS at Vds = 1 V and ... See full document
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Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates
... 200 V were realized, compared with the SH-FET. Because of the higher conduction band discontinuity and the better electron confinement in the channel, the Al 0.1 Ga 0.9 N back barrier of the DH-FET can effectively prevent ... See full document
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Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors
... heterojunction field-effect transistors 共HFETs兲 for high- frequency and high-power applications has been very ...metal-oxide-semiconductor field-effect transistors 共MOSFETs兲 can ... See full document
5
Comprehensive study of thermal stability performance of metamorphic heterostructure field-effect transistors with Ti/Au and Au metal gates
... metamorphic heterostructure field-effect transistors 共MHFETs兲 have received much attention for high-performance inte- grated electronic circuit ...InP-based transistors, 3,4 the ... See full document
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n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaP camel-gate high-electron mobility transistors
... ity transistors 共HEMTs兲 have become one of the most important semiconductor devices used in microwave ...the heterostructure field-effect transistors 共HFETs兲 without decreas- ing the ... See full document
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Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors
... potential based calculations as well as experimental observations of electron energy loss spectra (EELS) around the core have long-established the deep level identity of both screw and edge ... See full document
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Characteristics of a sulfur-passivated InGaP/InGaAs/GaAs heterostructure field-effect transistor
... The effect of 共NH 4 兲 2 S x treatment on the device characteristics of an InGaP/ InGaAs/ GaAs heterostructure field-effect transistor are studied and ...the improved thermal stabilities ... See full document
3
Influence of polymer gate dielectrics on n-channel conduction of pentacene-based organic field-effect transistors
... organic field-effect transistors 共OFETs兲 has been steadily improved at field-effect mobilities and on/off current ratios of ... See full document
4
Electrostatic Discharge Robustness of Si Nanowire Field-Effect Transistors
... III. C ONLUSION This letter presented, for the first time, valuable and inter- esting data pertinent to the ESD robustness of a promising NW device called the poly-Si NWTFT. The TLP measurement results revealed that ... See full document
3
Performance and potential of germanium on insulator field-effect transistors
... Early transistors used germanium but they were soon overtaken by those based on ...be improved by increasing the channel mobility—this may be accomplished with strained ...Germanium ... See full document
5
Solution-based silk fibroin dielectric in n-type C-60 organic field-effect transistors: Mobility enhancement by the pentacene interlayer
... In 2011, Wang et al. reported that the l FE value of pen- tacene OFETs was improved to ca. 23 cm 2 V 1 s 1 using silk fibroin as the gate dielectric. 5 Silk fibroin is a natural protein, which serves as an ... See full document
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Flicker noise of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor with a photo-CVD SiO2 layer
... breakdown field, high saturated electron drift velocity, and good thermal ...GaN-based transistors, such as metal-semiconductor field- effect-transistors 共MESFETs兲, ... See full document
5
Controllable carrier density of pentacene field-effect transistors using polyacrylates as gate dielectrics
... We have demonstrated that the single-layered polyac- rylate with electronegative side groups significantly in- duces a built-in field within the semiconductor/ dielectrics interface in p-type organic TFTs. This built-in ... See full document
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CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORS
... Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors. View the table of contents for this issue, or go to the journal homepage for more 1991 J[r] ... See full document
4
Ion-modulated electrical conduction in polyaniline-based field-effect transistors
... a field-effect transistor 共FET兲 using bilayer water-soluble polymer electrolytes/conjugated polymer, that is, poly共ethyleneimine兲 共PEI兲/polyaniline 共PANI兲 doped with camphor sulfonic acid 共CSA兲 structure, ... See full document
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Enhanced field-effect mobility in pentacene based organic thin-film transistors on polyacrylates
... dipole field inserted between the gate elec- trode and the pentacene, as shown in ...dipole field of the polymeric insulator modifies the surface potential which has the same effect as applying a ... See full document
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