[PDF] Top 20 Performance and potential of germanium on insulator field-effect transistors
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Performance and potential of germanium on insulator field-effect transistors
... Early transistors used germanium but they were soon overtaken by those based on ...scaling of sili- con devices progresses into the sub-100 nm regime, issues related to the degradation ... See full document
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Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) p(+)/n and n(+)/p Heterojunctions Formed on Si Substrate
... charge on an electron, n i is the intrinsic carrier concentration, τ 0 is the minority carrier lifetime, W is the width of the depletion region, and A is the area of the ..., and it is ... See full document
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Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors
... Instead of the effective-mass approximation, the valence subband structures for two-dimensional holes in Si- and Ge- channel DG-pMOSFETs are calculated self-consistently from the coupled Poisson and ... See full document
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Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors
... current, and the power ...teristic and play the central role in the high frequency performance and application of analog ...application of nanodevices. We note that for more ... See full document
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A process for high yield and high performance carbon nanotube field effect transistors
... field effect transistors (CNTFETs) have been considered as one of the potential candi- dates for nanoelectronics beyond Si ...high performance CNTFETs with high yield ...concept ... See full document
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Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal-oxide-semiconductor-field-effect-transistors
... level of NBTI. Therefore, the reduc- tion of NBTI under strained operation should be attributed from effec- tively E ox ...FB and GB devices as strain was ...strained and unstrained ... See full document
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Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect-transistors
... the performance of advanced Si integrated circuits re- ...demand of high drive current to increase circuit speed, Si is still approaching its physical ...metal-oxide-semiconductor field- ... See full document
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Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
... nm and W fin = 25 nm at T = 20 ◦ C. The phenomenon of G m oscillation can still be observed with V G ∼ 15 ...1 and 2 with L g = 30 nm, the decreased V G represents the C g dependence ... See full document
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Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping
... one of the most effective remedies to boost the drive current in the scaled ...3 and shallow trench ...gate of n-channel metal-oxide-semiconductor field-effect- transistors ... See full document
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Effect of Sensing Film Thickness on Sensing Characteristics of Dual-Gate Poly-Si Ion-Sensitive Field-Effect-Transistors
... sensitivity of the DG ISFETs with different sensing membranes operated under liquid-gate and bottom-gate ...sensitivities of DG ISFETs under liquid-gate mode were 37.68, 38.04 and 41 mV/pH for ... See full document
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Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques
... metal-oxide-semiconductor field-effect transistors; Self-aligned photolithography; Short channel effect; Zinc oxide thin film Background Over the past years, in view of the significant ... See full document
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Enhanced field-effect mobility in pentacene based organic thin-film transistors on polyacrylates
... level of the gate electrode shifts toward higher 共electron兲 energies. Part of the applied gate voltage is dropped across the gate insulator, and since the band alignment of the HOMO ... See full document
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The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors
... terms and conditions apply. The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors View the table of contents ... See full document
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Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors
... concerns of hard breakdown evolution in ultra- thin oxides have been ...degradation of the BD conduction path be- comes macroscopic and can last thousands of seconds even in the case of ... See full document
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Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors
... causes of V t hysteresis in PD SOI MOSFETs have been ...feedback of impact ion- ization due to long time constants associated with body po- tential ...body effect can lead to hysteresis in the sub- ... See full document
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Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS
... Ge and compound semiconductors (CS) show promise for future generation ...substrate and create good interfaces in the ...CSOI and Ge-on-insulator (GOI) devices with good ...OI on ... See full document
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Comprehensive study of thermal stability performance of metamorphic heterostructure field-effect transistors with Ti/Au and Au metal gates
... consisted of buffer, active, barrier, and cap ...layer and a 300 nm In 0.42 Al 0.58 As layer, was deposited on the semi-insulating GaAs ...layer of ␦ 2 共n + 兲 = 2 ⫻ 10 12 cm −2 , a 5 nm ... See full document
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Effect of Pulsed Electromagnetic Field on the Proliferation and Differentiation Potential of Human Bone Marrow Mesenchymal Stem Cells
... osteoporosis and accelerate the healing of bone fractures for many ...aim of this study is to investigate the effect of PEMFs on the proliferation and differentiation ... See full document
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Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal-Oxide-Semiconductor Field-Effect Transistors
... terms and conditions apply. Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect ... See full document
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Performance improvement of nickel salicided n-type metal oxide semiconductor field effect transistors by nitrogen implantation
... terms and conditions apply. Performance Improvement of Nickel Salicided n-Type Metal Oxide Semiconductor Field Effect Transistors by Nitrogen Implantation View the table ... See full document
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