[PDF] Top 20 Reliability of ultrathin gate oxides for ULSI devices
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Reliability of ultrathin gate oxides for ULSI devices
... Occurrence of soft-breakdown Breakdown characteristics of ultrathin gate oxides are discussed in this ...thin gate oxide sometimes exhibits a signi®cant leakage current increase ... See full document
14
Temperature-accelerated dielectric breakdown in ultrathin gate oxides
... down for oxide thickness ranging from ...that ultrathin oxide depicts a much higher sensitivity to ...Test devices used in this study were n-channel MOS capacitors and ...oxidation of silicon ... See full document
4
A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides
... in electrical engineering form National Chiao-Tung University (NCTU), Hsinchu, Taiwan, in 1985. Since 1985, he has been with the Department of Electronics Engineering, NCTU, where he is Professor. From 1987 to ... See full document
6
Improved immunity to plasma damage in ultrathin nitrided oxides
... device reliability. I. I NTRODUCTION U LTRATHIN gate oxides are indispensable for continuous scaling of advanced CMOS ULSI technologies into deep sub-half-micron ...and ... See full document
3
Resist-related damage on ultrathin gate oxide during plasma ashing
... end of process ...degree of damage for easy ...thin oxides is found by direct plasma exposure, even for devices with oxide thickness as thin as ...ratio of 10 ...presence ... See full document
3
Controlled deposition of new organic ultrathin film as a gate dielectric layer for advanced flexible capacitor devices
... superior reliability after bending the ...mantane) ultrathin film provides superior electrical prop- erties and reliability for the MIM ...performance of our flexible-base device is ... See full document
6
Plasma-induced charging damage in ultrathin (3-nm) gate oxides
... President of National Chiao Tung University (NCTU), ...part of today’s ...Institute of Technology, to join the NCTU ...semiconductor devices and technologies. In 1987, he became Dean of ... See full document
6
The role of resist for ultrathin gate oxide degradation during O-2 plasma ashing
... distribution of charge-to-breakdown across the wafer for devices with or without resist overlayer on the antenna ...Thin gate oxide with ...that devices with resist protection will ... See full document
3
Modeling of nitrogen profile effects on direct tunneling probability in ultrathin nitrided oxides
... 共x兲 for constructing the potential barrier, while simulating the en- ergy band ...probability for electrons 共in n-MOSFET兲 under positive bi- asing, and holes 共in p MOSFET兲 under negative biasing are plotted ... See full document
4
Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates
... Roadmap for Semiconductors, oxide thicknesses below 3 nm are necessary for the fabrication of deep sub-quarter micron ...only for the sample with heavy NIS ...ineffective for oxidation ... See full document
5
Evaluation of plasma charging damage in ultrathin gate oxides
... Evaluation of Plasma Charging Damage in Ultrathin Gate Oxides Horng-Chih Lin, Member, IEEE , Chi-Chun Chen, Chao-Hsing Chien, Szu-Kang Hsein, Meng-Fan Wang, Tien-Sheng Chao, Member, IEEE , ... See full document
3
Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides
... Reproduction of time-to-bimodal 共soft- and hard-兲 breakdown statistical data from ...3.3-nm-thick gate-oxide samples yields n BD of 3 and 4 for soft and hard breakdown, ...⬘ of 1.0 nm ... See full document
4
Improvements in both thermal stability of Ni-silicide and electrical reliability of gate oxides using a stacked polysilicon gate structure
... points of measured sheet resistance of the Ni-silicide formed on polysilicon film with various ...stability of Ni-silicide. The underlying layer of silicon film with less thickness could ... See full document
4
Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide
... ELECTRON DEVICES, ...because of the higher stress introduced by the higher heating rate during loading and ...increase of interface ...C for 3 to 5 ... See full document
4
Gold nanoparticle-decorated graphene oxides for plasmonic-enhanced polymer photovoltaic devices
... form of GO to prepare a device having a greater stability than that of the corresponding device incorporating ...presence of oxygen functionalities on the surface of GO provides reactive sites ... See full document
7
Investigation of Cu/TaN metal gate for metal-oxide-silicon devices
... area of 300 ⫻ 300 ...the gate di- electric. The purpose of using such a thick gate oxide is to isolate the gate electrode issues from the ultrathin oxide ...thickness of ... See full document
6
Facile preparation of sol-gel-derived ultrathin and high-dielectric zirconia films for capacitor devices
... zirconia ultrathin films from the sol–gel solution with dispersion of zirconium halide in 1-octanol ...films of interest were evaluated. The amorphous morphology of the zirconia film was ... See full document
5
Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics
... nitridation of the Si substrate in a low pressure chemical vapor deposition system at 800 °C for 1 ...the gate electrode. The gate of the MOS capacitor was defined by lithography, and ... See full document
7
Optimal design of triple-gate devices for high-performance and low-power applications
... issues for bipolar/BiCMOS devices and ...responsible for the circuit design of IBM’s high-performance CMOS microprocessors for enterprise servers, PowerPC workstations, and game/media ... See full document
6
Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide
... impacts of soft-breakdown (SBD) on the char- acteristics of deep sub-micron NMOSFETs were ...function of the device. When BD occurs at the channel, the turn-on behavior of the drain current ... See full document
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