[PDF] Top 20 Temperature- and field-dependent quantum efficiency in tris-(8-hydroxy) quinoline aluminum light-emitting diodes
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Temperature- and field-dependent quantum efficiency in tris-(8-hydroxy) quinoline aluminum light-emitting diodes
... mechanisms, and of the role played by or- ganic interfaces in controlling the operation of such ...V) and EL characteristics of organic LEDs 共OLEDs兲 are consis- tent with the injection of charge ... See full document
4
Temperature-Dependent Electroluminescence Efficiency in Blue InGaN-GaN Light-Emitting Diodes With Different Well Widths
... EL efficiency, as shown in ...electrons and holes induced by the stronger internal polarization ...EL efficiency, the required input current values are very different for the three LED ...EL ... See full document
3
Room Temperature Vibrational Photoluminescence and Field Emission of Nanoscaled Tris-(8-Hydroxyquinoline) Aluminum Crystalline Film
... polymers and small-molecule organic semiconductors due to many unique properties such as flexibility, high photocon- ductivity, and nonlinear optical effects that may offer appli- cations in ... See full document
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Controlling hole-transport in aluminum tris (8-hydroxyquinoline), Alq(3)-based organic light emitting diodes to improve the device lifetime by an oxidized transport layer
... present in Alq 3 is dominated by the formation of an electron cloud, confined by the high lowest unoccupied molecular orbital of ...plied field increases, the field assisted mobility of Alq 3 causes ... See full document
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High-efficiency red organic light emitting diodes Incorporating 1,3,5-tris(1-pyrenyl)benzene as the host material
... ITO and LiF /Al were employed as the anode and cathode, ...PL and absorp- tion spectra were measured using a Perkin–Elmer FL LS55 fluores- cence spectrophotometer and a Perkin–Elmer Lambda35 ... See full document
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Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
... pulsed in- jection currents are shown in ...cycle and the pulsed injection duration is 3 ...shown in the figure that less blueshift is observed for MQWs with thinner ...piezoelectric- ... See full document
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Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer
... GaN-based light emitting diodes 共LEDs兲 due to their widespread application in solid-sate lighting, dis- play technology, color printing, and optical ...GaN and the multiple ... See full document
4
Design and fabrication of temperature-insensitive InGaP-InGaAlP resonant-cavity light-emitting diodes
... Laih, and Shing-Chung Wang Abstract—Visible InGaP–InGaAlP resonant-cavity light-emit- ting diodes with low-temperature sensitivity output characteristics were ...C and 95 C for the ... See full document
3
Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance
... Power- and temperature-dependent PL measurements were carried out using a frequency-tripled Ti:sapphire laser with a wave- length of 266 ...system and PL measurement can be found in ... See full document
6
Improvement of the Efficiency of InGaN-GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Process
... IEEE, and Shing-Chung Wang, Life Member, IEEE Abstract—This study demonstrated the enhancement of the light output power of InGaN–GaN multiple quantum-well light-emitting diodes ... See full document
3
Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes
... the efficiency should increase with input current for the ideal ...increases and thus the ef- ficiency curves first go up to peak values and then gradu- ally ...of efficiency droop is changed ... See full document
11
High-efficiency polymer light-emitting diodes using neutral surfactant modified aluminum cathode
... 2005; In Final Form: January 10, 2006 High-efficiency polymer light-emitting diodes were fabricated by inserting a layer of nonionic neutral surfactant between the electroluminescent ... See full document
5
High-efficiency and low assembly-dependent chip-scale package for white light-emitting diodes
... Results and Discussion In general applications, LEDs are typically mounted on a PCB; thus, there is no influence regard- ing the type of SMD used because all of the photons originate from the top surface of ... See full document
10
Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment
... the temperature is further increased to 400 K. In contrast, no defect-assisted leakage process is observed in the LED with the pre-TMIn flow treatment at any ...it, and thus preventing gliding ... See full document
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Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells
... shift and broadening of EL spectra in GQW ...distribute in the narrower wells in GQW LED ...recombine in nar- rower wells, the intensity of shorter-wavelength part in emis- sion ... See full document
4
Hydroxynaphthyridine-Derived Group III Metal Chelates: Wide Band Gap and Deep Blue Analogues of Green Alq3 (Tris(8-hydroxyquinolate)aluminum) and Their Versatile Applications for Organic Light-Emitting Diodes
... or 8-hydroxy-1,5- naphthyridine) was obtained in lowest yields (47%), and it is due to formation of an undesired structural isomer (1,7- naphthyridin-4-ol) in the ring closure ...occur ... See full document
15
Stable Temperature Characteristics and Suppression of Efficiency Droop in InGaN Green Light-Emitting Diodes Using Pre-TMIn Flow Treatment
... Chen, and Tien-Chang Lu Abstract—We present experimental results on the improved performance and high stable temperature characteristics of the InGaN green light-emitting diode (LED) ... See full document
3
Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons
... escaping in a manner correlated with a reduc- tion of Fresnel reflection at the GaN/air ...interface. In LED III, the boosted amount on the EQE can be further improved to ...NRs, and it also remains ... See full document
9
Hydroxynaphthyridine-Derived Group III Metal Chelates: Wide Band Gap and Deep Blue Analogues of Green Alq(3) (Tris(8-hydroxyquinolate)aluminum) and Their Versatile Applications for Organic Light-Emitting Diodes
... or 8-hydroxy-1,5- naphthyridine) was obtained in lowest yields (47%), and it is due to formation of an undesired structural isomer (1,7- naphthyridin-4-ol) in the ring closure ...occur ... See full document
15
Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes
... layer, In x Ga 1 −x N/GaN multiple quantum wells, a Mg-doped p-AlGaN electron blocking layer, and a Mg-doped p-GaN ...by in- ductively coupled plasma etcher ...bridges and contact metal ... See full document
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