[PDF] Top 20 Application of soft landing to the process control of chemical mechanical polishing
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Application of soft landing to the process control of chemical mechanical polishing
... between the soft landing of a spacecraft and the CMP operation is ...Therefore, the CMP operation can be formulated as a minimum time optimal control problem and ... See full document
12
Effects of film stress on the chemical mechanical polishing process
... proliferation of chemical mechanical polish (CMP) pla- narization in recent years has not been accompanied by an adequate level of knowledge of the fundamental mechanisms ... See full document
8
Batch Sequencing for Run-to-Run Control: Application to Chemical Mechanical Polishing
... remainder of this paper is organized as follows. In section 2, the strengths and limitations of a feed- back system are explored and the feed sequencing problem is formulated ...taken ... See full document
12
Multivariable control of multi-zone chemical mechanical polishing
... First, a simple ratio control is designed based on the pseudo- inverse of the process model and, provided with the initial surface profile, the input pressures are com[r] ... See full document
4
A modified multi-chemical spray cleaning process for post shallow trench isolation chemical mechanical polishing cleaning application
... ing to the results shown in Table 2, when the order of the dilute HF and APM steps are switched, particles and metal levels are decreased by approximately a factor of four or ... See full document
6
Robust operation of copper chemical mechanical polishing
... work, the potential problem, non-monotonic oxidizer concentration effect, in Cu CMP is pointed out and verified ...proposed to ensure a robust operation. The first model adds the concentration ... See full document
15
Nano-bubble flotation technology with coagulation process for the cost-effective treatment of chemical mechanical polishing wastewater
... wastewater. the activator and collector dosage required for the treatment of 1 m 3 of CMP wastewater by conventional coagulation process are three and seven times, respectively, higher ... See full document
7
Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
... during the period. In the periods ranging from 10 to 48 h, the condensation process resulted in a network-like structure through the bulk MSZ ...Next, the water content ... See full document
7
A comparative study on the roles of velocity in the material removal rate during chemical mechanical polishing
... with the Preston equation is that the definition of V appears vague, since, in an orbital CMP system, the carrier and pad rotate at their respective speeds and the velocity varies from ... See full document
8
Analyses and experimental confirmation of removal performance of silicon oxide film in the chemical-mechanical polishing (CMP) process with pattern geometry of concentric groove pads
... value of the removed thickness near the centre of the wafer is lower than those at other ...due to the distribution of the hydrodynamic pressure, which forms ... See full document
9
High-selectivity damascene chemical mechanical polishing
... Ideally, the Cu-CMP process should remove the excess Cu from barrier surfaces without losing Cu metals in ...rate of Cu is required for the phase 1 Cu-CMP to efficiently ... See full document
4
Post cleaning of chemical mechanical polishing process
... (ii) As the wafer is transported to a tank with an alkali solution, the fresh surface gradually disappears and a negative charge (negative zeta potential) is built up [r] ... See full document
4
CHARACTERIZATION OF THE CHEMICAL-MECHANICAL POLISHING PROCESS-BASED ON NANOINDENTATION MEASUREMENT OF DIELECTRIC FILMS
... Removal rate of thermal oxide The role of the slurry particles is to add a chemical "tooth" to the polishing process, 2 a n d the bond strength between the s[r] ... See full document
7
The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
... Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan Received 25 June 2002; received in revised form 12 May 2003; accepted 28 May 2003 Abstract In situ electrochemical ... See full document
8
Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films
... ']'he effects of as-depo;ited (intrinsic) stress, externally applied (extrinsic) stresses, hardness, and modules of various dielectric films on chemica]-machanical polishing (CMP) re[r] ... See full document
6
Modeling of the wear mechanism during chemical-mechanical polishing
... This model concerns the effects of applied pressure and relative velocity between the pad and the wafer on the removal rate during polishing and is capable of delineating the role of the[r] ... See full document
6
Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing
... Department of Submicron Technology Development, ERSO/ITRI, Hsinchu, Taiwan Abstract Copper chemical mechanical polishing (Cu-CMP) was investigated using slurries containing alumina abrasive ... See full document
5
Effect of oxidizer on the galvanic behavior of Cu/Ta coupling during chemical mechanical polishing
... 2006 The Electrochemical ...2006. To meet the requirement of global planarization, chemical me- chanical polishing 共CMP兲 has emerged as a critical technique in Cu metallization ... See full document
6
Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry
... on the mechanism proposed by Kaufman et al., 1 CMP involves the repeated processes of passive film formation, removal and repassivation of passive ...According to this model, the ... See full document
7
Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane
... becomes the performance barrier for high-speed ...applied to multilevel interconnect architec- ture reducing signal propagation time delay, cross talk, and power consumption ...known to exhibit lower ... See full document
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