[PDF] Top 20 The channel length extension in poly-Si TFTs with LDD structure
Has 10000 "The channel length extension in poly-Si TFTs with LDD structure" found on our website. Below are the top 20 most common "The channel length extension in poly-Si TFTs with LDD structure".
The channel length extension in poly-Si TFTs with LDD structure
... annealing with the laser energy density of 420 mJ/cm 2 . After the active island formation, a 60-nm-thick oxide layer was deposited as the gate ...as the gate electrode. The n − ... See full document
3
Degradation Mechanism of Poly-Si TFTs Dynamically Operated in OFF Region
... After poly-Si active area definition, 50-nm SiO 2 and 25-nm SiN X were deposited with PECVD as the gate ...Next, the TFT gate was formed by metal sputtering and then defined by ... See full document
3
On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure
... of the figures in this letter are available online at ...at the drain pinchoff region into the n-region [9], [10]. In addition, the SONOS memory and display switch devices can be ... See full document
3
A novel laser-processed self-aligned gate-overlapped LDD poly-Si TFT
... lapped LDD (SAGOLDD) poly-Si thin film transistors (TFTs) was ...from the backside of the quartz wafer. The graded LDD structure was naturally formed under ... See full document
3
High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure
... Then, the amorphous silicon layer in the channel parts was re- moved following by another 50-nm amorphous silicon layer de- ...During the irradiation, the samples were located on ... See full document
3
The Degradation of MILC P-Channel Poly-Si TFTs under Dynamic Hot-Carrier Stress Using a Novel Test Structure
... [email protected] In this study, dynamic hot carrier effect in the MILC p-channel TFT device has been characterized by the unique ...novel structure is capable of ... See full document
12
Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel
... of the figures in this letter are available online at ...investigates the poly-Si channel of JL TFTs utilizing dry oxidation to form the ultrathin channel ... See full document
3
Characterization of the Channel-Shortening Effect on P-Type Poly-Si TFTs
... because the voltage drop in the channel can hardly be ...Therefore, in this paper, the gated p-i-n device is adopted, where one side of the source/drain doping in ... See full document
9
Novel Sub-10-nm Gate-All-Around Si Nanowire Channel Poly-Si TFTs With Raised Source/Drain
... RSDNW-TFTs with a channel length of ...than the planar-TFTs. It is believed that the electrical characteristics of poly-Si TFTs can be improved if ... See full document
3
Effect of channel-width widening on a poly-Si thin-film transistor structure in the linear region
... is the first paper to discuss the ON -state drain–current of a special thin-film transistor structure with a wide channel width and a narrow source/drain width in the ... See full document
8
High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure
... 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON / OFF current ratio, improved subthreshold characteristics, less threshold voltage rolloff, and larger ... See full document
4
Novel gate-all-around poly-Si TFTs with multiple nanowire channels
... (GAA) poly-Si thin-film transistors (TFTs) with multiple nanowire channels (MNCs) have been, for the first time, fabricated using a simple process to demonstrate high-performance ... See full document
3
High-performance nanowire TFTs with metal-induced lateral crystallized poly-Si channels
... of the figures in this letter are available online at ...improve the device performance by reducing the effects of grain boundaries or enhancing the gate controllability over ... See full document
3
A simple Spacer technique to fabricate poly-Si TFTs with 50-nm nanowire channels
... fabricate the poly-Si TFTs with NW chan- nels in this ...letter. The 50-nm NW channel could be easily real- ized by anisotropically etched without extra mask or ... See full document
3
The Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structure
... 共poly-Si TFTs兲 have been widely used in many potential applications including three- dimensional 共3D兲 integration high density flash memories, pixel driving elements in active-matrix ... See full document
7
Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels
... Via the SLS process, the grain boundaries tend to be aligned and lie parallel to the growth direction, and regularly location- controlled irradiated zones (3 μm × 1 μm) can be achieved [5], as shown ... See full document
3
Characteristics of Planar Junctionless Poly-Si Thin-Film Transistors With Various Channel Thickness
... With the heavy and homogenous doping concentration throughout S/D and the channel, the operation of the JL devices is drastically different from that of conventional MOSFETs, ... See full document
7
A Novel SONOS Memory With Recessed-Channel Poly-Si TFT via Excimer Laser Crystallization
... RC-ELC poly-Si TFTs have been utilized to demonstrate the SONOS memory with excellent electric ...characteristics. The proposed RC-ELC TFTs exhibited a high field-effect ... See full document
3
Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure
... presents the normalized I D – V G curves of the STD and the proposed NW ...SONOS-TFTs. The electrical parameters are also extracted in the insert ...Comparing the ... See full document
5
Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering
... investigated in this study. One was designated as “NILC NW” which was a poly-Si NW fabricated with traditional NILC methods, and another was “GETR NW” which utilized the same ... See full document
4
相關主題