[PDF] Top 20 The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)
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The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)
... Department of Materials and Optoelectronic Science, b Center for Nanoscience & Nanotechnology, and c Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, ... See full document
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Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
... storage based memory structures, such as nanocrystal and SONOS, have encountered data storage ...have the most potential as candidates for ReRAM. However, the RS behav- ior rarely occurs in SiO 2 ... See full document
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Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
... HOPPING EFFECT OF HYDROGEN-DOPED SILICON OXIDE INSERT RRAM 619 shown in ...4. The nucleus of metal titanium caused the defect of the film, leading to ... See full document
3
GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
... images of ITO LEDs with n þ -SPS tunnel contact layer and with nanostruc- tured silicon contact layer, ...surface of ITO LED with n þ -SPS tunnel contact layer is smooth ... See full document
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Effect of reactive ion etching and post-etching annealing on the electrical characteristics of indium-tin oxide silicon junctions
... resistance of ITO/p-type Si junctions where silicon substrates were subjected to reactive ion etching for 3 min at various ...function of etching power are calculated and exhib- ited in ...increase ... See full document
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Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
... investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO 2 fluid ...treatment. The dangling ... See full document
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Influence of TiN particles on the wear behavior of silicon nitride-based composites
... shows the wear coefficients of three different test ...and the Si 3 N 4 has the highest wear coefficients among all ...materials. The wear coefficients increase with load up to a ... See full document
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Effect of oxygen on characteristics of nickel oxide/indium tin oxide heterojunction diodes
... INTRODUCTION The diversity in oxide semiconductor junctions and their functions were rather limited compared to conventional semiconductors, even though oxide semiconductors have ex- cellent ... See full document
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Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices
... properties of the electrode materials, variations in ITO thin film properties may cause different switching characteristics in ...paper, the electrical switching behavior of an ITO/HfO x ... See full document
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Effect of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method
... Republic of China 共Received 2 September 1999; accepted for publication 13 October 1999兲 We have investigated the oxide growth kinetics of near-room-temperature liquid phase chemical enhanced ... See full document
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Effect of Lateral Body Terminal on Silicon-Oxide-Nitride-Oxide-Silicon Thin-Film Transistors
... was the only difference. The fabrication pro- cess of LBT SONOS TFTs does not need any additional mask ...step. The body terminal was formed by the mass-separated ion implanter ... See full document
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GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer
... LEDs with single-layer or multilayer graphene electrode. Nevertheless, the observed forward voltage (V f ) of the device was high ...current of 20 mA) compared with ...reported ... See full document
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Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
... Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan (Received 29 March 2012; accepted 21 August 2012; published online 14 ... See full document
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High performance of graphene oxide-doped silicon oxide-based resistance random access memory
... x RRAM device, it exhibits stable HRS and LRS even after more than 10 6 pulse cycles (Figure ...Zr with SiO 2 , respectively, we fabricated a double resistive switching layer RRAM, which has ... See full document
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Annealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memory
... show the programing and erasing charac- teristics, respectively, with different pulse widths for the HfO 2 SONOS-type flash memories with different post- HfO 2 -deposition annealing ... See full document
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Effect of Oxygen on the Microstructural Growth and Physical Properties of Transparent Conducting Fluorine-Doped Tin Oxide Thin Films Fabricated by the Spray Pyrolysis Method
... spectra of FTO films with varying oxygen con- centrations, deposited on Corning ...respectively. The evaluation results can be explained by a correlation of light scattering and reflection, ... See full document
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Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
... lots of intrinsic carrier generation of electron transport behavior in metallic filament of Gd:SiO 2 thin ...prove the above inference detail for optoelectronic effect, the ... See full document
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Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)
... in the Si band gap? Spin-dependent recombination study of the P b1 “hyperfine spectrum”’” ...in the article. Reuse of AIP content is subject to the terms at: ... See full document
2
Effect of plasma treatment on the microstructure and electrical properties of MIM capacitors with PECVD silicon oxide and silicon nitride
... Accepted: 15 March 2006 / Published online: 30 December 2006 Springer Science+Business Media, LLC 2006 Abstract Metal–insulator–metal (MIM) capacitors with plasma enhanced chemical vapor deposited (PECVD) ... See full document
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Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003)
... Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan. © 2003 The Electrochemical Society. L10[r] ... See full document
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