[PDF] Top 20 The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs
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The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs
... However, the transmittance of such a conventional Ni/Au contact is only around 60–80% in the 450–550-nm ...transparent indium tin oxide 共ITO兲, instead of Ni/Au, as ... See full document
4
Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide
... are of great importance in fabricating visible and ultraviolet light-emitting diodes ...improve the light output power of LEDs, the contact resistance must be reduced ... See full document
4
GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer
... based LEDs with single-layer or multilayer graphene ...Nevertheless, the observed forward voltage (V f ) of the device was high ...current of 20 mA) compared with ... See full document
6
The Application of Indium Tin Oxide Conductive Layer for AlGaInP LEDs 盧俊宇、蕭宏彬
... Indium-Tin Oxide, was introduced to enhance the current spreading and been a transparent ...cm) and superior transparency ...ohmic contact between ITO and ... See full document
3
GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
... these LEDs were then evaluated by injecting a 50 mA DC current into these devices at ...Results and discussion Figs. 1a and b show atomic force microscope images of ITO LEDs with n þ ... See full document
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Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si contact
... by the integrated-circuit industry. However, its applications in areas of optics and optoelectronics are much less due to the indirect band gap nature that makes it hardly emit ...electronics ... See full document
3
Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer
... development of high-efficiency InGaN light- emitting diodes 共LEDs兲 is considered one of the most impor- tant topics in the area of solid-state ...However, the efficiency ... See full document
3
Structural and optical characterizations of GaN-based green light-emitting diodes growth using TiN buffer layer
... using TiN buffer layer with (a) 2 nm; (b) 4 nm; (c) 6 nm; (d) 8 nm; (e) 10 nm thickness and (f) in-situ monitoring of uGaN template using TiN buffer layer (4 ...nm). The ... See full document
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High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorod by Glancing-Angle Deposition
... characteristics of GaN-based VI-LEDs with and without an ITO nanorod array were measured at room temperature, as shown in ...3. The operation voltage was 3.39 and 3.47 V ... See full document
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GaN-Based Resonant-Cavity LEDs Featuring a Si-Diffusion-Defined Current Blocking Layer
... review of relevant research, GaN-based LEDs featuring a Si-diffusion-defined CBL has not yet been ...to LEDs, RCLEDs have several advantages, including narrow spectral widths, stable ... See full document
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Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes
... Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China 共Received 3 December 2002; accepted 16 June 2003兲 The effect of ... See full document
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Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces
... energy and a strong cohesive ...displays, and solar cells. 1–8 The achievement of acceptable device characteristics relies heavily on devel- oping low specific contact resistance 共 兲 ... See full document
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Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer
... improve the performance of GaN-based light emitting diodes 共LEDs兲 due to their widespread application in solid-sate lighting, dis- play technology, color printing, and optical ... See full document
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Transformation of the classic – The new contact point between cultural creativity and fashion crafts
... rich and diversified output exhibits such trends as being closer to contemporary life and initiating a mass ...economy, the high added value that can be created by an aesthetic-knowledge-based ... See full document
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Embedded indium-tin-oxide nanoelectrodes for efficiency and lifetime enhancement of polymer-based solar cells
... awareness of petroleum scarcity and global climate changes has promoted an increasing demand for clean and renewable energy sources, pushing forward the realization of third-generation ... See full document
4
Relation between the Primary Implant Stability of the Dental Implant and Bone to Implant Contact Percentage
... Relation between the Primary Implant Stability of the Dental Implant and Bone to Implant Contact Percentage Jui-Ting Hsu a* , Ming-Tzu Tsai b and Heng-Li Huang a a School ... See full document
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The Study of Ohmic Contact to GaN and Investigations on Metal-Oxide-Semiconductor Photodetectors 楊國輝、黃俊達
... ABSTRACT The main goal of this dissertation is to investigate the techniques of a low-resistance and high-transparency Ti/indium tin oxide and Ti ohmic ... See full document
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Effect of Kapitza contact and consideration of tube-end transport on the effective conductivity in nanotube-based composites
... amount of ba- sic research because of the unique properties enabled by their nanoscale ...lus, and high strength. Among various applications, the de- velopment of nanocomposites ... See full document
4
Methods of determining the contact between a probe and a surface under scanning electron microscopy
... Instead of trying to avoid the “charging effect” at the first place by getting the samples grounded in one way or another, we first keep the samples electrically isolated from ... See full document
8
Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer
... improve the dam- age on etched p-GaN such as replacing the argon by nitrogen in the plasma chemistry, 12,13 lowering the plasma power, 14 and forming the regrown p-InGaN ... See full document
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