[PDF] Top 20 Operation of a Novel Device With Suspended Nanowire Channels
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Operation of a Novel Device With Suspended Nanowire Channels
... NW channels were stuck to the gate nitride after the first ...force of the NW channels cannot overcome in order to return to the suspended ...origin of this phenomenon is still under ... See full document
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Fabrication and characterization of field-effect transistors with suspended-nanowire channels
... swing of the ...12. A similar observa- tion was also documented previously 31) and the cause is attributed to the larger strain resulting from the larger displacement of the channels during ... See full document
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Performance Enhancement of Thin-Film Transistors With Suspended Poly-Si Nanowire Channels by Embedding Silicon Nanocrystals in Gate Nitride
... (NC), nanowire (NW), ...because of their potential applications in several ar- eas, such as switches, resonators, memory, and sensor devices ...associated with most suspended- type devices is ... See full document
3
A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire Channels
... demonstrate a novel scheme for fabricating CMOS inverters with NW chan- ...regions of the p-channel and n-channel devices. With the proposed scheme, a one-mask-count-only S/D ... See full document
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Novel gate-all-around poly-Si TFTs with multiple nanowire channels
... ELECTRON DEVICE LETTERS, VOL. 29, NO. 8, AUGUST 2008 889 Novel Gate-All-Around Poly-Si TFTs With Multiple Nanowire Channels Ta-Chuan Liao, Student Member, IEEE, Shih-Wei Tu, Ming ... See full document
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Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels
... FG device when operated at the beginning of the programming ...study, a simple method for the fabrication of a GAA poly-Si NW FG memory device with high P/E efficiency was ... See full document
6
Characterisation of a suspended nanowire channel thin-film transistor with sub-100 nm air gap
... keV with a dose of 5 × 10 15 cm 22 ...length of the device, as shown in Fig. 1. A 400 nm passivation oxide layer was deposited on the wafer by LPCVD at ...NW channels, ... See full document
3
Novel gate-all-around polycrystalline silicon nanowire memory device with HfAlO charge-trapping layer
... exhibit a greatly enhanced operation ef ficiency as compared with the SiN GAA ...characteristics of the three splits of the GAA NW devices are shown in ...window of the SiN memory ... See full document
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Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure
... remain a 0.8 V after 5 × 10 3 P/E cycles. 4. Conclusions A novel poly-Si TFT combined with nonvolatile SONOS memory and nanowire structure is demonstrated in this ...as a ... See full document
5
A Novel Charge-Trapping-Type Memory With Gate-All-Around Poly-Si Nanowire and HfAlO Trapping Layer
... because of the increase in the surface curvature of the wrapped nanowire (NW) channel [5], ...impacts of both structure and trapping medium, GAA CT devices with poly-Si NW ... See full document
3
Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels
... One of the channel cross-sectional view of (a), BB direction, as a tri-gate ...form a sidewall spacer that abutted the polysilicon ...implantation of phosphorous ions at a ... See full document
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A simple Spacer technique to fabricate poly-Si TFTs with 50-nm nanowire channels
... introduced a simple, low-cost, and self-aligned spacer technique to fabricate the poly-Si TFTs with NW chan- nels in this ...structure with the sidewall and corner contribution ...characteristics ... See full document
3
Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels
... as a function of the overetch time. Fig. 3 depicts a picture taken by transmission electron microscopy (TEM), showing an NW channel formed on the sidewall of a gate after plasma ...the ... See full document
7
Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels
... ELECTRON DEVICE LETTERS, ...Transistors With Heavily Doped Polysilicon Nanowire Channels Chun-Jung Su, Tzu-I Tsai, Yu-Ling Liou, Zer-Ming Lin, Horng-Chih Lin, Senior Member, IEEE, and ... See full document
3
Chaos synchronization and chaos anticontrol of a suspended track with moving loads
... synchronization of the autonomous and the non-autonomous systems is ...synchronized with master systems, no matter how large A ...application of synchronization and secure communication is ... See full document
28
A novel fabrication method for suspended high-aspect-ratio microstructures
... fabrication of suspended microstructures with relatively small widths of trench opening ...propose a novel process for fabricating very high-aspect-ratio suspended ... See full document
10
Numerical study of a novel micro-diaphragm flow channel with piezoelectric device for proton exchange membrane fuel cells
... amplitude of the vibration of a piezoelectric (PZT) device produces an oscillating flow that changes the chamber volume along with a curvature variation of the ... See full document
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High-performance nanowire TFTs with metal-induced lateral crystallized poly-Si channels
... ELECTRON DEVICE LETTERS, VOL. 29, NO. 5, MAY 2008 High-Performance Nanowire TFTs With Metal-Induced Lateral Crystallized Poly-Si Channels Chia-Wen Chang, Student Member, IEEE, Szu-Fen Chen, ... See full document
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High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization
... characteristics of SPC and MILC poly-Si TFTs with NW channels are compared in ...have a nominal channel length L of 1 µm and a channel width W of 45 ...MILC device, ... See full document
3
Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels
... from a higher lateral field because its gate control was more robust than that of the G1S1 [9], [10] Ni-MILC poly-Si ...ison of the single-gate (G1M10) and dual-gate (G2M10) with the same ten ... See full document
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